1. Polytypism in ultrathin tellurium
- Author
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Apte, A, Bianco, E, Krishnamoorthy, A, Yazdi, S, Rao, R, Glavin, N, Kumazoe, H, Varshney, V, Roy, A, Shimojo, F, Ringe, E, Kalia, RK, Nakano, A, Tiwary, CS, Vashishta, P, Kochat, V, Ajayan, PM, Apte, A [0000-0001-6337-5406], Bianco, E [0000-0003-3211-9375], Krishnamoorthy, A [0000-0001-6778-2471], Glavin, N [0000-0002-9447-7509], Varshney, V [0000-0002-2613-458X], Ringe, E [0000-0003-3743-9204], Nakano, A [0000-0003-3228-3896], Tiwary, CS [0000-0001-9760-9768], and Apollo - University of Cambridge Repository
- Subjects
synthesis ,polytypism ,2d materials ,tellurene - Abstract
We report the synthesis of ultrathin tellurium films, including atomically thin tellurium tri-layers, by physical vapor deposition (PVD) as well as larger area films by pulsed laser deposition (PLD). PVD leads to sub-nanometer, tri-layer tellurene flakes with distinct boundaries, whereas PLD yields uniform and contiguous sub-7 nm films over a centimeter square. The PLD films exhibit the characteristic hexagonal crystal structure of semiconducting tellurium, but high resolution transmission electron microscopy (HRTEM) reveals a unique stacking polytype in the thinner PVD-grown material. Density Functional Theory calculations predict the possible existence of three polytypes of ultrathin Te, including the α-type experimentally observed here. The two complementary growth methods afford a route to controllably synthesize ultrathin Te with thicknesses ranging from three atomic layers up to 6 nm with unique polytypism. Lastly, temperature dependent Raman studies suggest the possible coexistence of polymorphs.
- Published
- 2019