Back to Search Start Over

Vacancy-Mediated Anomalous Emission Characteristics of Size-Confined Semiconducting CoTe 2 .

Authors :
Das S
Pal S
Kumbhakar P
Tromer RM
Negedu SD
Galvao DS
Das S
Tiwary CS
Ray SK
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Nov 30; Vol. 14 (47), pp. 53139-53149. Date of Electronic Publication: 2022 Nov 17.
Publication Year :
2022

Abstract

Transition-metal tellurides (TMTs) are promising materials for "post-graphene age" nanoelectronics and energy storage applications owing to their industry-standard compatibility, high electron mobility, large spin-orbit coupling (SOC), etc. However, tellurium (Te) having a larger ionic radius ( Z = 52) and broader d-bands endows TMTs with semimetallic nature, restricting their application in photonic and optoelectronic domains. In this work, we report the optical properties of the quantum-confined semiconducting phase of cobalt ditelluride (CoTe <subscript>2</subscript> ) for the first time, exhibiting excellent two-color band photoabsorption attributes covering the UV-visible and near-infrared regions. Furthermore, novel excitonic resonances (X) of size-varying CoTe <subscript>2</subscript> nanocrystals and quantum dots (QDs) are indicated by their temperature-dependent emission characteristics, which are attributed to the splitting of band edge states via confinement. On the other hand, the sudden rupture of the large-area CoTe <subscript>2</subscript> nanosheets via ultrasonication incorporates Co vacancy-mediated localized trap states within the band gap, which is attributed to the superior room-temperature photoluminescence (PL) quantum yield of QDs and further corroborated using Raman analysis and atomistic density functional theory (DFT) simulations. Most interestingly, the excitonic peak of CoTe <subscript>2</subscript> QDs reveals a unique positive-to-negative thermal quenching transition phenomenon, owing to the thermal activation of nonradiative surface trap states. These results introduce an exciting approach for the defect-mediated color-saturated light emission that paves the way for solution-processed telluride-based QD light-emitting diodes.

Details

Language :
English
ISSN :
1944-8252
Volume :
14
Issue :
47
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
36394999
Full Text :
https://doi.org/10.1021/acsami.2c14318