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Focuses on a study that presented rate constants for light-enhanced thermal oxidation of silicon. Parts of the photon-stimulated oxidation enhancement; Analytical approach to fundamental understanding of oxidation data; Thermal analysis of the samples.

Explains the quasiequilibrium, morphological and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. Information on Czochralski silicon; Thermal annealing of Czochralski silicon; Morphological and crystallographic characteristics of stacking faults in doped Czochralski silicon materials.

Discusses the importance of oxygen-oxygen interactions in silica structures. Variety of theoretical approaches applied to the modeling of vitreous silica; Process of building silica structures from monomers; Role of oxygen-oxygen interactions in the formation of silica structures.

Presents a study that described vacancy supersaturation in silicon/silicon dioxide interface caused by silicon oxide formation. Methodology; Analysis of test structures with oxide steps and stacking faults; Examination of test structure with a polysilicon layer.

Focuses on a study which investigated the effects of stress in silicon nitride films, deposited by the low-pressure chemical vapor deposition process, on the point defect concentrations in silicon. Correlation between the magnitude of stress and reactant gases; Effect of nitride thickness; Change in the average stacking fault sizes.

Studies the effect of heavy boron doping upon oxygen precipitation in Czochralski silicon. Information on the x-ray theoretical considerations; Details on the experiment; Bragg line profiles; Conclusions.

Presents information on a study which investigated the impact of high carbon concentration on oxygen precipitation and related phenomena in Czochralski silicon (CzSi). Enhancement of oxygen precipitation; Thermodynamic and kinetic aspects of oxygen precipitate morphology in high carbon content; Experimental details; Results and discussion; Conclusions.

Presents information on a study which analyzed the kinetics of silicon (Si) interstitial generation, recombination and diffusion in floatzone (FZ) and Czochralski (CZ) Si during oxidation using thin Si membranes as test structures. Description of the FZ and CZ grown Si used for the membrane experiment; Use of the spreading resistance measurement technique to obtain phosphorus profile; Interstitial concentrations under the inert condition.

Reports on a novel technique for the removal of gold in silicon at 900 degree celsius. Examples of some techniques that have been shown to be effective in the removal of gold from silicon; Description of the techniques; Illustration of the apparatus used to generate the positive ion beam.

The UV absorption spectrum of exclusion zone (EZ) water has been used to define the unique signature of this type of water structure. Specifically, an absorption peak at a wavelength of 270 nm is found to be characteristic of EZ water. We present experimental evidence that this same behavior can be found in certain bulk waters. This includes waters not contaminated by organic substances that are known to absorb UV radiation at this wavelength. We present UV absorption data for bulk water treated using a remote treatment method (both before and after treatment) that shows the characteristic 270 nm peak only after such treatment. In addition, an inflection point (shoulder) at 210 nm is found which is a new spectroscopic feature for this type of treated water. These treated waters also show unique and characteristic light scattering features that have not been reported before. Anomalous turbidity enhanced by the input of mechanical energy appears to be characteristic of these treated waters. [ABSTRACT FROM AUTHOR]