A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion.

Presents information on a study which analyzed the kinetics of silicon (Si) interstitial generation, recombination and diffusion in floatzone (FZ) and Czochralski (CZ) Si during oxidation using thin Si membranes as test structures. Description of the FZ and CZ grown Si used for the membrane experiment; Use of the spreading resistance measurement technique to obtain phosphorus profile; Interstitial concentrations under the inert condition.