Effective gettering of gold in silicon at 900 °C by low-current corona discharge.

Authors :: Falster, R. J.
Modlin, D. N.
Tiller, W. A.
Gibbons, J. F.
Source :: Journal of Applied Physics; 1/15/1985, Vol. 57 Issue 2, p554, 5p, 1 Diagram, 8 Graphs
Publication Year :: 1985
Abstract: Reports on a novel technique for the removal of gold in silicon at 900 degree celsius. Examples of some techniques that have been shown to be effective in the removal of gold from silicon; Description of the techniques; Illustration of the apparatus used to generate the positive ion beam.

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