145 results on '"Tegude, F.J."'
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2. A three-terminal planar selfgating device for nanoelectronic applications
3. Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces
4. X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy
5. Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
6. InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
7. Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
8. Comparison of the passivation effects on self-and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx
9. Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
10. Calculation of coherent tunneling coefficients for arbitrary barrier structures considering -X band coupling at heterointerfaces
11. Logic circuits with reduced complexity based on devices with higher functionality
12. High Transconductance MISFET With a Single InAs Nanowire Channel
13. High performance submicron RTD design for mm-wave oscillator applications.
14. Scalable high-current density RTDs with low series resistance.
15. Fabrication and RF performance of InAs nanowire FET.
16. Pseudo Dynamic Gate Design Based on the Resonant Tunneling-Bipolar Transistor (RTBT)
17. 450 GHz millimetre-wave signal from frequency tripler with heterostructure barrier varactors on gold substrate
18. A nanoparticle-coated nanocrystal-gate for an InP-based heterostructure field-effect transistor.
19. InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport
20. A New Consistent RF-and Noise Model with Special Emphasis on Impact Ionisation for Dual-Gate HFET in Cascode Configuration
21. HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures
22. Monodisperse aerosol particle deposition: Prospects for nanoelectronics
23. NAND/NOR logic circuit using single InP-based RTBT
24. A new analytical and scaleable noise model for HFET
25. MMIC in-circuit and in-device testing with an on-wafer high frequency electric force microscope test system
26. Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
27. Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
28. The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT
29. A novel 3-D integrated HFET/RTD frequency multiplier
30. Electro-optic probing of RF signals in submicrometre MMIC devices
31. Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
32. Room-temperature deposition of SiNx using ECR-PECVD for semiconductor microelectronics in lift-off technique
33. Asymmetric (Schottky-ohmic) MSM photodetector
34. A new noise model of HFET with special emphasis on gate-leakage
35. Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
36. Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
37. X-ray characterization of very thin layers grown on InP
38. Highly strained In0.5Ga0.5P as wide-gap material on InP substrate for heterojunction field effect transistor application
39. High breakdown voltage InGaAs/InAlAs HFET using In0.5Ga0.5P spacer layer
40. A consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFETs.
41. InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFET
42. Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
43. Numerical analysis of InP-JFET by use of a quasi 2D-model
44. Coplanar microwave phase shifter for InP-based MMICs
45. 27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier.
46. Monolithic integrated laser DHBT OEICs for optical fibre communication.
47. Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer.
48. Analytic simulation of impact ionization in InAlAs/InGaAs HFET's.
49. On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuits.
50. On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performance.
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