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Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces
- Source :
- Journal of Applied Physics. Jan 1, 1996, Vol. 79 Issue 1, p305, 5 p.
- Publication Year :
- 1996
- Subjects :
- Photoluminescence -- Research
Epitaxy -- Research
X-rays -- Diffraction
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18110135