X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy

Authors :: Liu, Q.
Lindner, A.
Scheffer, F.
Prost, W.
Tegude, F.J.
Source :: Journal of Applied Physics. March 1, 1994, Vol. 75 Issue 5, p2426, 8 p.
Publication Year :: 1994
Abstract: High resolution X-ray diffraction spectroscopic (HRXRD) studies on InAs/InGaAs, GaAs/InGaAs and InAs/GaAs/InGaAs superlattices (SLs) reveal the validity of the low-pressure metalorganic vapor-phase epitaxy method for generating the SLs. The HRXRD studies quantify the layer thicknesses and interface qualities of highly strained InAs and GaAs layers.

Subjects :: Gallium arsenide -- Research
Semiconductors -- Research
X-rays -- Diffraction
Physics

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