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210 results on '"THALES [France]-ALCATEL"'

1. Integrated lasers on silicon for optical communications

Author: Manel Ramirez, Joan, Souleiman, Amin, Fanneau, Pierre, Besancon, Claire, Vaissiere, Nicolas, Neel, Delphine, Ramez, Valentin, Malhouitre, Stéphane, Hassan, Karim, Merghem, Kamel, Decobert, Jean, Bitauld, David, Nokia Bell Labs [Paris-Saclay], Institut Polytechnique de Paris (IP Paris), Département Electronique et Physique (TSP - EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thales III-V Lab (III-V Lab ), and THALES [France]
Subjects: [PHYS]Physics [physics], Silicon, Optical communications, Lasers
Abstract: We review our work on integrated lasers for optical communications. An InP-based multilayer stack containing Al-based quantum wells with optical gain in the telecom window is bonded onto a silicon-on-insulator wafer with patterned photonic circuits and cavities. Ring-based widely tunable lasers and narrow linewidth DFB lasers are demonstrated.
Published: 2023

2. Ultralow Noise and High-Power VECSEL for High Dynamic Range and Broadband RF/Optical Links

Author: Mickael Faugeron, Stephane Formont, Gregoire Pillet, Frederic van Dijk, Mehdi Alouini, Sophie Bouchoule, Zhuang Zhao, Fabien Bretenaker, Loic Morvan, Loic Menager, Ghaya Baili, Daniel Dolfi, Jean-Louis Oudar, Thales Research and Technology [Palaiseau], THALES [France], Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire d'économie mathématique et de microéconomie appliquée (LEMMA), Université Panthéon-Assas (UP2), Thomson-CSF Laboratoire Central de Recherches (THOMSON-CSF LCR), Thomson, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, OPTEL - Equipe Optique et électronique pour les télécoms, THALES [France]-ALCATEL-THALES [France]-ALCATEL, Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Aimé Cotton (LAC), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), THALES, Université Panthéon-Assas (UP2)-Sorbonne Université (SU), THALES-ALCATEL, THALES-ALCATEL-THALES-ALCATEL, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-École normale supérieure - Cachan (ENS Cachan)
Subjects: Optical amplifier, Distributed feedback laser, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Relative intensity noise, Physics::Optics, Noise figure, Laser, 7. Clean energy, Vertical-external-cavity surface-emitting-laser, Atomic and Molecular Physics, and Optics, law.invention, Optics, law, Optoelectronics, Laser power scaling, business, Noise (radio), ComputingMilieux_MISCELLANEOUS
Abstract: We describe a compact, ultralow noise, and high-power semiconductor laser implemented in a high performances wideband externally modulated optical link. The laser is based on a vertical external cavity surface emitting laser (VECSEL) designed for high-power and low-noise operation. Thanks to a specific design of the gain chip, the half-VCSEL, based on a metamorphic Bragg mirror and a report on a copper substrate, an optical power of 110 mW is obtained at 1.55 μm in the single frequency regime. For low-noise operation, the laser cavity is designed for free-relaxation-oscillations operation, i.e., in the so-called class-A regime. The Class-A VECSEL exhibits a relative intensity noise below −170 dB/Hz over a wide frequency bandwidth, from 300 MHz to 40 GHz, except at the laser free spectral range (20.4 GHz). In the low-frequency range, the laser noise, mainly due to transfer of pump noise to laser noise, goes from −110 dB/Hz at 1 kHz down to −158 dB/Hz at 10 MHz. Two externally modulated optical links are implemented and compared in terms of the RF gain and the noise figure. The first optical link is based on the ultralow noise class-A VECSEL and the second one is based on a low noise class-B DFB laser. Thanks to the outstanding noise properties of the designed VECSEL, the VECSEL-based optical link outperforms the DFB-based one, in particular for frequencies larger than 20 GHz.
Published: 2014

3. Optimized ohmic contacts for InAlGaN/GaN HEMTs

Author: Ruterana, Pierre, Chauvat, Marie, Morales, Magali, Medjdoub, Farid, Gamarra, Piero, Dua, Christian, Delage, Sylvain, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Propriétés des Matériaux pour les Economies d'Energie (PM2E), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Alcatel-Thales III-V Lab (III-V Lab), THALES [France], Alcatel-Thales III-V Lab (III-V Lab ), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, This work was partially supported by the Region Normandie under project PLACANANO, convention 18E01651, Renatech Network, PCMP CHOP, ANR-14-CE26-0022,LHOM,Couches d'InAlN et hétérostructures optimisées pour la future génération de transistors hyperfréquences de puissance(2014), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-11-EQPX-0020,GENESIS,Groupe d'Etudes et de Nanoanalyses des Effets d'IrradiationS(2011), European Project: 662322,H2020,ECSEL-2014-1,OSIRIS(2015), Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252], Propriétés des Matériaux pour les Economies d'Energie [PM2E], WIde baNd gap materials and Devices - IEMN [WIND - IEMN], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Alcatel-Thales III-V Lab [III-V Lab], Alcatel-Thales III-V Lab [III-V Lab ], and Alcatel-Thalès III-V lab [III-V Lab]
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics]
Abstract: International audience; In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2 atmosphere. Subsequent to an optimized surface preparation, prior to the metal deposition, it has been possible to systematically obtain a contact resistance of 0.15-0.16 Ω.mm instead of the usual 0.5-0.6 Ω.mm. This is comparable to the state of the art results which have been published subsequent to more complex processes including molecular beam regrowth.
Published: 2022

4. Oscillateur optoélectronique couplé

Author: Maxin, Jérémy, Pillet, Grégoire, Faugeron, Mickael, Van Dijk, Frederic, Morvan, Loïc, Llopis, Olivier, Dolfi, Daniel, Thales Research and Technology [Palaiseau], THALES [France], OPTEL - Equipe Optique et électronique pour les télécoms, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL-THALES [France]-ALCATEL, THALES [France]-ALCATEL, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), THALES, THALES-ALCATEL-THALES-ALCATEL, THALES-ALCATEL, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: [SPI]Engineering Sciences [physics]
Abstract: National audience; Nous présentons dans cette communication la réalisation d'un oscillateur optoélectronique couplé, ou COEO et un premier résultat en bruit de phase
Published: 2013

5. Non linear model of InP/GaAsSb/InP DHBT process for design of a Q-Band MMIC oscillator

Author: Laurent, Sylvain, Callet, Guillaume, Nallatamby, Jean-Christophe, Prigent, Michel, Nodjiadjim, Virginie, Riet, Muriel, C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL-THALES [France]-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), THALES [France]-ALCATEL, THALES-ALCATEL-THALES-ALCATEL, and THALES-ALCATEL
Subjects: [SPI]Engineering Sciences [physics]
Abstract: This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was made by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-m-long two-finger emitter. This paper describes the complete nonlinear modeling of heterojunction bipolar transistor used in this circuit. The interest of the methodology used to design this oscillator, is to be able to choose a nonlinear operating condition of the transistor from a study in amplifier mode. The oscillator simulation and measurement results are compared.
Published: 2010

6. High speed mid-IR Quantum Cascade Detector at room temperature

Author: A. Evirgen, Stefano Barbieri, J-F. Lampin, M. Hakl, A. Delga, V. Trinite, G. Quinchard, A. Larrue, E. Peytavit, C. Mismer, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), THALES [France]-ALCATEL, and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)
Subjects: Patch antenna, Heterodyne, Materials science, business.industry, Terahertz radiation, Detector, Astrophysics::Instrumentation and Methods for Astrophysics, Heterojunction, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Cascade, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Antenna (radio), 0210 nano-technology, business, Coherence (physics)
Abstract: International audience; We present a high-speed antenna enhanced Quantum Cascade Detector at 10.3μm. By using a coherent detection scheme and thin InGaAs/AlInAs heterostructure embedded in metal-metal patch antenna, we demonstrate a heterodyne response up to 67 GHz at room temperature.
Published: 2020

7. High speed, antenna-enhanced 10.3μm quantum cascade detector

Author: G. Quinchard, C. Mismer, M. Hakl, J. Pereira, Q. Lin, S. Lepillet, V. Trinité, A. Evirgen, E. Peytavit, J. L. Reverchon, J. F. Lampin, S. Barbieri, A. Delga, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), This work was partially supported by the French National Research Agency, and Direction Générale de l’Armement (project HISPANID), Nord-Pas de Calais Regional Council, Fonds Européens de Développement Régional, RENATECH (French Network of Major Technology Centres), and CPER 'Photonics for Society.', Renatech Network, PCMP CHOP, and ANR-17-ASTR-0008,Hispanid,Détecteur infrarouge hétérodyne haute fréquence(2017)
Subjects: Photovoltaics, Photonic materials, RC circuits, Physics and Astronomy (miscellaneous), Photoconductivity, Optical communications, Lasers, Photodetectors, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Infrared photodetector, Waveguides, Electronic band structure, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience; The strong potential of intersubband detectors in the field of mid-infrared photodetection places this technology as a relevant alternative to HgCdTe detectors in the race for ultrafast operation. While their extremely short photocarrier's lifetime opens up possibilities of detection beyond 100 GHz, it is also the main reason for their comparatively high dark current. Here, a photovoltaic quantum cascade detector at 10.3 μm, embedded in a metal–metal patch antenna is presented in both direct and heterodyne detection schemes. In DC, a responsivity of 122 mA/W at 77 K and 85 mA/W at 295 K is reached. More strikingly, the device shows temperature independent heterodyne response with a capacitance-limited cutoff frequency of 25 GHz both at 77 K and room temperature. It is modeled quantitatively by means of an equivalent RC-circuit picture stemming from microscopic transport considerations.
Published: 2022

8. 80 GHz beatnote generation in a single tapered distributed feedback hybrid III-V / silicon laser

Author: Grillot, Frederic, Callado, G., Verolet, T., Jany, Christophe, Hassan, K., Malhouitre, Stephane, Coquiard, A., Combrie, Sylvain, Shen, A., De Rossi, A., Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Télécom ParisTech-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure des Télécommunications (ENST), Institut Polytechnique de Paris (IP Paris), Thales Research and Technologies [Orsay] (TRT), THALES [France], Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'électronique et des technologies de l'Information [Sfax] (LETI), École Nationale d'Ingénieurs de Sfax | National School of Engineers of Sfax (ENIS), THALES, and THALES-ALCATEL
Subjects: [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2020

9. Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates

Author: Sylvain David, Jean Decobert, Nicolas Vaissiere, Delphine Néel, Cecilia Dupre, Frank Fournel, Claire Besancon, Christophe Jany, Dalila Make, Franck Bassani, Thierry Baron, Giancarlo Cerulo, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), and THALES-ALCATEL
Subjects: [PHYS]Physics [physics], Threshold current, Fabrication, Materials science, Laser diode, business.industry, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, 010309 optics, law, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Lasing threshold, ComputingMilieux_MISCELLANEOUS
Abstract: In this work, we present the fabrication process of a $3~\mu \text{m}$ -thick AlGaInAs-based vertical p-i-n laser diode structure grown on a directly bonded InP-SiO2/Si (InPoSi) substrate. High-quality epitaxial growth on InPoSi is reported. Based on these structures, the fabrication process of Fabry-Perot broad lasers is presented. Device performance is compared to the ones obtained from the same growth run on an InP substrate as a reference. High electrical properties of the n and p contacts are demonstrated. Lasing operation in the pulse regime is shown up to 50°C. Threshold current densities as low as 0.4 kA/cm 2 at 20°C are obtained for the laser on InPoSi, comparable to the ones obtained for the reference on InP substrate.
Published: 2020

10. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Author: Loic Sanchez, Thierry Baron, S. David, V Muffato, Franck Bassani, Frank Fournel, Christophe Jany, C Besancon, Jean Decobert, J-P Le Goec, Cecilia Dupre, Nicolas Vaissiere, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), THALES [France], THALES [France]-ALCATEL, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
Subjects: Materials science, Silicon, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Direct bonding, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, General Materials Science, Wafer, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Silicon photonics, business.industry, Mechanical Engineering, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Outgassing, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business
Abstract: Hybrid integration of III-V materials onto silicon by direct bonding technique is a mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform. In this approach, the III-V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process onto the silicon-on-insulator wafer. Currently, no additional epitaxial regrowth steps are implemented after bonding. This can be seen as a huge limitation as compared to the III-V on III-V wafer mature technology where multi-regrowth steps are most often implemented. In this work, we have studied the material behavior of an InP membrane on silicon (InPoSi) under epitaxial regrowth conditions by metal-organic vapor phase epitaxy (MOVPE). MOVPE requires high-temperature elevation, typically above 600 °C. We show for the first time the appearance of voids at 400 °C in an InP seed (100 nm) directly-bonded onto a thermally oxidized Si substrate despite the use of a thick SiO2 oxide (200 nm) at the bonding interface. This phenomenon is explained by a weakening of the bonding interface while high-pressurized hydrogen is present. A kinetic study of the hydrogen lateral diffusion is carried out, enabling the assessment of its lateral diffusion length. To overcome the void formation, highly efficient outgassing trenches after bonding are demonstrated. Finally, high-quality AlGaInAs-based multi-quantum well (MQW) heterostructure surrounded by two InP layers was grown by MOVPE on InPoSi template patterned with outgassing trenches. This process is not only compatible with MOVPE regrowth conditions (650 °C under PH3) but also with conventional fabrication processes used for photonic devices.
Published: 2020

11. Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO 2 /Si Substrate

Author: Claire Besancon, Thierry Baron, Cecilia Dupre, Jean Decobert, Franck Bassani, Nicolas Vaissiere, Sylvain David, Frank Fournel, Loic Sanchez, Christophe Jany, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), THALES [France], Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and THALES [France]-ALCATEL
Subjects: [PHYS]Physics [physics], Silicon photonics, Materials science, business.industry, 02 engineering and technology, Surfaces and Interfaces, Direct bonding, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 020210 optoelectronics & photonics, Quality (physics), Si substrate, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

12. Characterization of solar array's cells to substrate bonding interface

Author: Romain Couderc, Philippe Voarino, Bernard Boulanger, Yannick Roujol, Frederic Bourcier, Honorine Boirard, Etienne Rapp, Romain Cariou, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Thales Alenia Space [Cannes], Thales Alenia Space, CEA Le Ripault (CEA Le Ripault), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), THALES [France]-ALCATEL, Thales Alenia Space [Toulouse] (TAS), THALES [France], and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, integumentary system, business.industry, Interface (computing), Photovoltaic system, food and beverages, 02 engineering and technology, Substrate (printing), Electroluminescence, 021001 nanoscience & nanotechnology, 7. Clean energy, Trapped air, Characterization (materials science), [SPI]Engineering Sciences [physics], biological sciences, Optoelectronics, Transient (oscillation), 0210 nano-technology, business, Transient electroluminescence, ComputingMilieux_MISCELLANEOUS
Abstract: Standard space solar arrays consist of solar cells protected by coverglass, glued individually on rigid substrate. The solar cells / substrate bonding interface quality is crucial since trapped air bubbles at this interface can cause strong cell damages once under vacuum. In this study, we show that transient electroluminescence can be used as a fast and nondestructive characterization tool to map the solar cells rear-side gluing interface defects.
Published: 2019

13. First space concentrator prototype using III-V/Si cells

Author: Olivier Raccurt, Christophe Jany, Philippe Voarino, Anderson Bermudez-Garcia, Karim Medjoubi, Romain Cariou, Laura Vauche, CEA Le Ripault (CEA Le Ripault), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Nexcis, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ARC-Nucleart CEA Grenoble (NUCLEART), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: Materials science, Silicon, business.industry, chemistry.chemical_element, Germanium, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Space (mathematics), Concentrator, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, law.invention, Lens (optics), [SPI]Engineering Sciences [physics], Electric power system, chemistry, Photovoltaics, law, Optoelectronics, 0210 nano-technology, business, Nonimaging optics, ComputingMilieux_MISCELLANEOUS
Abstract: Concentrating PhotoVoltaics (CPV) can increase the efficiency of power systems in space while reducing their cost. This paper presents the first concentrator prototype using III-V/Si cells for space applications. This new approach will significantly reduce cost by concentrating sunlight then decreasing cell material, and in particular using III-V/Si triple-junction (3J) cells will allow the usage of Silicon, which is an abundant, twice less dense and low-cost material than the typically used Germanium. The efficiency of III-V/Si solar cells used is 25.7% @AM0. In our refractive module design, Compound Parabolic Concentrator (CPC), twelve 1.5x13mm2 cells are embedded in a Dow Corning® 93-500 silicone optics that provides an ∼8x concentration factor with an optical efficiency of 68%. Additionally, this linear-focus lens enables the use of single-axis sun tracking.
Published: 2019

14. Cl2/Ar based atomic layer etching of AlGaN layers

Author: P. Altuntas, Jorge Pereira, O. Patard, Christophe Gaquiere, Piero Gamarra, Sylvain Delage, Nicolas Defrance, N. Michel, Jean-Claude De Jaeger, Cedric Lacam, Sébastien Aroulanda, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors acknowledge support from GANEX (No.ANR-11-LABX-0014). GANEX belongs to the publicfunded'Investissements d’Avenir'program managed by theFrench ANR agency., ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), THALES [France], and THALES [France]-ALCATEL
Subjects: Two-dimensional electron gas, Materials science, Surface finish, High-electron-mobility transistor, macromolecular substances, Field effect transistors, 01 natural sciences, 7. Clean energy, Nitrides, Semiconductor materials, [SPI]Engineering Sciences [physics], Adsorption, Etching (microfabrication), 0103 physical sciences, Surface roughness, Heterostructures, Reactive-ion etching, Atomic-layer etching, 010302 applied physics, business.industry, Wide-bandgap semiconductor, Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films, Semiconductor device fabrication, Optoelectronics, business, Layer (electronics)
Abstract: International audience; This paper reports on atomic layer etching of several III-N materials such as GaN, AlN, AlGaN, and InAlGaN based on a sequential surface modification by chlorine adsorption followed by a low energy Ar plasma exposure to remove the modified layer using a reactive ion etching system. A study on the influence of several parameters, such as gas flow rates, removal step duration, RIE power and number of cycles on the etch per cycle, and the root-mean-square roughness, is performed. Low etch per cycle from 0.17 to 1.85 nm/cycle, respectively, for AlGaN and GaN and surfaces as smooth as the as-grown samples were obtained. The developed process is intended to be used for normally off GaN-based high electron mobility transistor processing.
Published: 2019

15. Phase Synchronization of Monolithic Dual DFB Lasers for Microwave Photonics: Experiment vs Model

Author: Frederic van Dijk, Aurelien Thorette, Marco Romanelli, Marc Vallet, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and THALES-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Physics::Optics, 02 engineering and technology, Laser, Phase synchronization, 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Amplitude modulation, 020210 optoelectronics & photonics, Modulation, law, Optical Carrier transmission rates, 0103 physical sciences, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Microwave, Spectral purity
Abstract: International audience; The experimental implementation of optically carried RF signals, in the 1-100 GHz range and beyond, is fundamental for microwave photonics applications. The technique of heterodyning two laser waves provides an interesting alternative to direct modulation of light. Indeed, it allows generating directly a single-sideband signal over an optical carrier, that is inherently insensitive to dispersion in a fiber link. It also features a 100% modulation depth, a broad and continuous tunability. Phase-locking to electronic local oscillators results in optical beatings of very high spectral purity; furthermore, high microwave frequencies 100 GHz) can be reached by suitable multiplication or downconversion techniques (at the expense of a degradation of the phase noise performances)
Published: 2019

16. Single-sideband hybrid opto-electronic oscillator

Author: Marc Vallet, Steve Bouhier, Mehdi Alouini, Marco Romanelli, Frederic van Dijk, Aurelien Thorette, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), and THALES-ALCATEL
Subjects: Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Optical fiber, business.industry, 020208 electrical & electronic engineering, Physics::Optics, 02 engineering and technology, Feedback loop, Opto-electronic oscillator, Noise (electronics), law.invention, Interferometry, 020210 optoelectronics & photonics, law, Dispersion (optics), Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Compatible sideband transmission
Abstract: International audience; Opto-electronic oscillators (OEO) are important building blocks in microwave photonics systems, allowing to obtain low-phase noise optically-carried radiofrequency signals. We have recently demonstrated an OEO scheme based on a monolithic dual-frequency source, whose beatnote is self-stabilized using frequency-shifted optical feedback, and a delay line [2]. The main interest of such a setup is that it allows the generation of single-sideband signals, which are thus insensitive to dispersion fading when propagating in optical fibers. The scheme presented offered good short-term performances. However, it could be affected by mode-hopping due to both the resonant modes of the optical feedback loop, and to those of the optoelectronic loop including the delay line. In the present work, we present significant improvements, namely the complete suppression of mode-hopping, and a significant reduction of the spurs in the phase noise spectrum. This has been obtained by (i) the introduction of a RF interferometer thanks to the use of two delay lines, and (ii) a significant shortening of the optical feedback loop (see Fig. 1(a)).
Published: 2019

17. Opto-electronic oscillator based on hybrid feedback loop for single-side band operation

Author: Thorette, Aurélien, Romanelli, Marco, Bouhier, Steve, Van Dijk, Frederic, Alouini, Mehdi, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: International audience; We demonstrate single-sideband opto-RF oscillation using monolithic InGaAsP DFB lasers. The heterodyne signal is stabilised by a hybrid method that combines optical reinjection and delayed opto-electronic feedback, leading to a locking of the beatnote onto a filtered version of itself. Mode-hop suppression has been obtained by (i) the introduction of a RF interferometer thanks to the use of two delay lines, and (ii) a significant shortening of the optical feedback loop, which also implies the use of direct current modulation. Our setup provides a phase noise level down to −75 dBc/Hz at 1 kHz offset from a 10 GHz carrier.
Published: 2019

18. Laser hybride intégré sur InP-Si3N4/SiO2 à faible largeur de raie

Author: Boust, Sylvain, Primiani, Peppino, Gomez, Carmen, Paret, Jean-François, Garreau, Alexandre, Mekhazni, Karim, Fortin, Catherine, Makhsiyan, Mathilde, Fedeli, Jean-Marc, Duport, François, Van Dijk, Frederic, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Société Française d'Optique, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: International audience; Nous présentons un laser hybride intégré sur puce InP-Si3N4/SiO2 atteignant une largeur de raie de 23 kHz. Une accordabilité électrique continue de 91 pm à 1546.1 nm, combinée à un taux de réjection moyen de 74 dB, est expérimentalement démontrée.
Published: 2019

19. High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Author: Franck Bassani, Sylvain David, Claire Besancon, Nicolas Vaissiere, Frank Fournel, Viviane Muffato, Thierry Baron, Jean-Pierre Le Goec, Jean Decobert, Christophe Jany, Cecilia Dupre, Alcatel-Lucent Bell Labs, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and THALES [France]-ALCATEL
Subjects: Silicon photonics, Active structure, Materials science, business.industry, Heterojunction, 02 engineering and technology, Direct bonding, Substrate (electronics), Epitaxy, 020210 optoelectronics & photonics, Quality (physics), Material quality, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract: Epitaxial growth of high material quality $1.55\boldsymbol{\mu} \mathbf{m}$ AlGaInAs Multiquantum Wells Heterostructure on a directly-bonded InPoSi substrate has been developed for datacom applications.
Published: 2019

20. Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Author: Claire Besancon, Laura Vauche, Alejandro Datas, Pablo Garcia-Linares, Philippe Voarino, Cecilia Dupre, Elias Veinberg-Vidal, Jean Decobert, Karim Medjoubi, Anne Kaminski-Cachopo, Clément Weick, Pierre Mur, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: Materials science, Wafer bonding, Energía Eléctrica, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, law, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Optical filter, ComputingMilieux_MISCELLANEOUS, Common emitter, Tandem, Renewable Energy, Sustainability and the Environment, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Suns in alchemy, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Energías Renovables, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Electrónica, Solar simulator, 0210 nano-technology, business
Abstract: Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga₀.₅In₀.₅P emitter and a p‐Al₀.₂Ga₀.₈As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm² tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.
Published: 2019

21. Risk factors for treatment failure in scabies: a cohort study

Author: Aussy, A., Houivet, E., Hébert, V., Colas‐Cailleux, H., Laaengh, N., Richard, C., Ouvry, M., Boulard, C., Leger, S., Litrowski, N., Bénichou, J., Joly, P., Béchu, Stéphane, Mion‐Mouton, N., Lafaurie, O., Barrel, A., Pulluard, M., Hamel, V., Dore, M.X., Duflo, E., Lardans‐Cassius, S., Rzeznik, J.C., Baricault, S., Unité de biostatistiques [CHU Rouen], Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-CHU Rouen, Normandie Université (NU), Service de Dermatologie [Rouen], CHU Rouen, Normandie Université (NU)-Normandie Université (NU)-Hôpital Charles Nicolle [Rouen], Physiopathologie, Autoimmunité, maladies Neuromusculaires et THErapies Régénératrices (PANTHER), Normandie Université (NU)-Normandie Université (NU)-Institut National de la Santé et de la Recherche Médicale (INSERM), Photochimie moléculaire et macromoléculaire (PMM), Centre National de la Recherche Scientifique (CNRS)-Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Institut de Chimie du CNRS (INC), Institut de biologie et chimie des protéines [Lyon] (IBCP), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Interuniversitaire de Biologie de la Motricité (LIBM ), Université de Lyon-Université de Lyon-Université Jean Monnet [Saint-Étienne] (UJM)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Normandie Université (NU)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Hôpital Charles Nicolle [Rouen], Normandie Université (NU)-Normandie Université (NU), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and Université de Lyon-Université de Lyon-Université Jean Monnet - Saint-Étienne (UJM)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])
Subjects: Adult, Male, medicine.medical_specialty, Adolescent, [SDV]Life Sciences [q-bio], Administration, Oral, Beds, Dermatology, Administration, Cutaneous, Benzoates, Risk Assessment, Drug Administration Schedule, Cohort Studies, Scabies, Young Adult, 030207 dermatology & venereal diseases, 03 medical and health sciences, 0302 clinical medicine, Ivermectin, Pharmacotherapy, Risk Factors, Internal medicine, Animals, Humans, Medicine, Treatment Failure, Child, Decontamination, ComputingMilieux_MISCELLANEOUS, Antiparasitic Agents, business.industry, Incidence (epidemiology), Infant, Odds ratio, medicine.disease, Confidence interval, 3. Good health, Child, Preschool, Ambulatory, [SDV.IMM]Life Sciences [q-bio]/Immunology, Drug Therapy, Combination, Female, France, Sarcoptes scabiei, business, Cohort study, medicine.drug
Abstract: Background Treatment failure, which occurs in about one-third of cases, is considered as a major factor in the increasing incidence of scabies in developed countries. Objectives To identify predictors of treatment failure of scabies in ambulatory populations. Methods This multicentre study compared the clinical characteristics and treatment modalities between a group of patients with scabies treated successfully and another group who were not cured 3 months after antiscabies treatment. Results In total 210 patients with a diagnosis of scabies were included, comprising 98 patients in the treatment success group and 112 in the treatment failure group. The main risk factors for treatment failure were (i) the use of only one type of treatment, topical benzyl benzoate (BB) or oral ivermectin, vs. the combination of both treatments [odds ratio (OR) 2·15, 95% confidence interval (CI) 1·22-3·77]; (ii) the use of a single intake (vs. two) of oral ivermectin (OR 10·2. 95% CI 4·49-23·2); (iii) intake of ivermectin during a meal vs. on an empty stomach (OR 4·31, 95% CI 1·89-9·84); (iv) absence of decontamination of furnishings (OR 8·72, 95% CI 3·50-21·8), in particular sofa and cushions (OR 5·90, 95% CI 2·34-14·9), mattresses (OR 4·16, 95% CI 1·35-12·8) or car seats (OR 6·57, 95% CI 3·27-13·2) and (v) absence of written documents explaining treatment modalities (OR 5·18, 95% CI 2·57-10·4). In multivariate analysis, treatment failure was mainly associated with (i) use of a single intake (vs. two) of ivermectin (OR 6·62, 95% CI 2·71-16·2); (ii) use of BB alone vs. two intakes of ivermectin (OR 3·51, 95% CI 1·55-7·95) and (iii) absence of decontamination of furniture with acaricides (OR 5·81, 95% CI 1·96-16·7). Conclusions Use of topical BB alone and a single intake (vs. two) of ivermectin are predictors of treatment failure.
Published: 2019

22. A 5G mmWave Fiber-Wireless IFoF Analog Mobile Fronthaul Link With up to 24-Gb/s Multiband Wireless Capacity

Author: G. Giannoulis, Nikos Pleros, Helene Debregeas, Dimitrios Apostolopoulos, S. Papaioannou, Christos Vagionas, Konstantina Kanta, Hercules Avramopoulos, N. Argyris, George Kalfas, Christophe Caillaud, Nikolaos Iliadis, National Technical University of Athens [Athens] (NTUA), Mellanox Technologies [Sunnyvale], Aristotle University of Thessaloniki, Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, European Commission [761989], THALES [France], and THALES [France]-ALCATEL
Subjects: indoor measurements, business.industry, Computer science, Analog radio-over-fiber, Subcarrier multiplexing, Transmitter, 020206 networking & telecommunications, externally modulated laser, 02 engineering and technology, Remote radio head, Multiplexing, Atomic and Molecular Physics, and Optics, Subcarrier, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, M-QAM, Telecommunications link, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Baseband, digital subcarrier multiplexing, Wireless, business, mobile fronthaul, millimeter wave radio
Abstract: International audience; We experimentally demonstrate a multiband intermediate frequency-over-fiber/mmWave (IFoF/mmWave) fiber/wireless mobile fronthaul link for gigabit capacity over the unlicensed V-band (57-64 GHz). Digital synthesis of the multiband radio waveforms is performed at the baseband unit using digital subcarrier multiplexing technique, whereas digital predistortion is exploited to cope with the analog IFoF channel impairments without any further baseband processing at the digital-free remote radio head. Commercial optoelectronic components and analog V-band radio and antenna equipment for 7-km fiber and 5-m wireless transmission are employed to successfully demonstrate both uplink and downlink connectivity. An aggregate capacity up to 24 Gb/s was demonstrated with a 6-band 1 Gbaud 16-QAM on a 7.2-GHz analog bandwidth over the combined fiber/wireless channel showing error vector magnitude (EVM) values below the 3GPP requirements (
Published: 2019
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23. Building blocks of silicon photonics

Author: Vivien, Laurent, Baudot, Charles, Boeuf, Frederic, Szelag, Bertrand, Alonso-Ramos, Carlos, Benedikovic, Daniel, Marris-Morini, Delphine, Cassan, Eric, Guerber, Sylvain, Douix, Maurin, Virot, Léopold, Rodriguez, Philippe, Nemouchi, Fabrice, Jany, Christophe, Bakir, Badhise, Le Roux, Xavier, Perez-Galacho, Diego, Berciano, Mathias, Marcaud, Guillaume, Charlet, Ismael, Deniel, Lucas, Lafforgue, Christian, Zhang, Jianhao, Serna, Samuel, Damas, Pedro, Do, Phuong, Doser, Dorian, Durel, Jocelyn, Ghegin, Elodie, Vakarin, Vladyslav, Ramirez, Joan-Manel, Monfray, Stéphane, Cremer, Sébastien, Duran Valdeiglesias, Elena, Sanchez, Loic, Fournel, Franck, Brianceau, Pierre, Hassan, Karim, Benedikovic, Daniel, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), and THALES-ALCATEL
Subjects: [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

24. Corrigendum to 'Tritium retention in w plasma-facing materials: Impact of the material structure and helium irradiation' [Nucl. Mater. Energy 2019; 19: 403–410], Nuclear Materials and Energy, 22, 100729 (2020)

Author: Ryuichi Sakamoto, Hiroshi Yamada, Matt Thompson, S. Garcia-Argote, V. V. Burwitz, Nobuaki Yoshida, E. Autissier, Marie-France Barthe, Etienne Hodille, R.P. Doerner, Sabina Markelj, Grégory Pieters, F Ghiorghiu, Régis Bisson, Pierre Desgardin, Thomas Schwarz-Selinger, B. Rousseau, Cormac Corr, Christian Grisolia, E. Bernard, Arkadi Kreter, S. Feuillastre, Mykola Ialovega, STMicroelectronics [Crolles] (ST-CROLLES), National Institute for Fusion Science (NIFS), Helsingin yliopisto = Helsingfors universitet = University of Helsinki, Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association, Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI), Université d'Orléans (UO)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Max-Planck-Institut für Plasmaphysik [Garching] (IPP), Institut de Chimie et Biochimie Moléculaires et Supramoléculaires (ICBMS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut de Recherche sur la Fusion par confinement Magnétique (IRFM), Physique des interactions ioniques et moléculaires (PIIM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), University of Canberra, University of California [San Diego] (UC San Diego), University of California (UC), Jozef Stefan Institute [Ljubljana] (IJS), Nastional Institute for Fusion Science (NIFS), NIFS, Kyushu University, Fondation A*Midex, ANR-11-IDEX-0001,Amidex,INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE(2011), European Project: 633053,H2020,EURATOM-Adhoc-2014-20,EUROfusion(2014), Materials Physics, Department of Physics, University of Helsinki, Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université d'Orléans (UO), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-École Supérieure Chimie Physique Électronique de Lyon-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, University of California, and Kyushu University [Fukuoka]
Subjects: Tritium inventory, Nuclear and High Energy Physics, Tokamak, Materials science, Annealing (metallurgy), Materials Science (miscellaneous), Analytical chemistry, chemistry.chemical_element, Tungsten, Tritium, 01 natural sciences, 114 Physical sciences, Plasma-wall interactions, Helium, 010305 fluids & plasmas, law.invention, law, Desorption, 0103 physical sciences, FACILITY, Irradiation, 010302 applied physics, Liquid scintillation counting, lcsh:TK9001-9401, inventory, Nuclear Energy and Engineering, chemistry, 13. Climate action, lcsh:Nuclear engineering. Atomic power, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], ddc:624
Abstract: This article has an erratum: DOI 10.1016/j.nme.2020.100729 Plasma-facing materials for next generation fusion devices, like ITER and DEMO, will be submitted to intense fluxes of light elements, notably He and H isotopes (HI). Our study focuses on tritium (T) retention on a wide range of W samples: first, different types of W materials were investigated to distinguish the impact of the pristine original structure on the retention, from W-coated samples to ITER-grade pure W samples submitted to various annealing and manufacturing procedures, along with monocrystalline W for reference. Then, He and He-D irradiated W samples were studied to investigate the impact on He-damages such as nano-bubbles (exposures in LHD or PSI-2) on T retention. We exposed all the samples to tritium gas-loading using a gentle technique preventing any introduction of new damage in the material. Tritium desorption is measured by Liquid Scintillation counting (LSC) at ambient and high temperatures (800 degrees C). The remaining T inventory is then measured by sample full dissolution and LSC. Results on T inventory on He exposed samples highlighted that in all cases, tritium desorption as a gas (HT) increases significantly due to the formation of He damages. Up to 1.8 times more T can be trapped in the material through a competition of various mechanisms, but the major part of the inventory desorbs at room temperature, and so will most likely not take part to the long-term trapped inventory for safety and operational perspectives. Unfortunately, investigation of "as received" industrial W (used for the making of plasma-facing materials) highlighted a strong impact of the pre existing defects on T retention: up to 2.5 times more T is trapped in "as received W" compared to annealed and polish W, and desorbs only at 800 degrees C, meaning ideal W material studies may underestimate T inventory for tokamak relevant conditions.
Published: 2019

25. Narrow Linewidth InP/Si3N4 Laser for Lidar Applications

Author: Boust, Sylvain, Primiani, Peppino, Paret, Jean-François, Garreau, Antoine, Mekhazni, Karim, Fortin, Catherine, Provost, Jean-Guy, Fedeli, Jean-Marc, Duport, François, van Dijk, Frederic, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), and THALES-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: National audience
Published: 2018

26. Mid-infrared optical characterization of InGaAsP

Author: Olivier Parillaud, Giuseppe Leo, Ivan Favero, Jean-Michel Gérard, Iännis Roland, Michel Krakowski, Alice Bernard, Bruno Gérard, Marco Ravaro, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Thales Research and Technology [Palaiseau], THALES, Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Université Grenoble Alpes (UGA), EDF (EDF), Laboratoire Pierre Aigrain (LPA), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, THALES [France], and Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, near infrared, 02 engineering and technology, Mole fraction, 01 natural sciences, Measure (mathematics), 020210 optoelectronics & photonics, Optics, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Range (statistics), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], refractive index, Scattering, business.industry, Near-infrared spectroscopy, Statistical and Nonlinear Physics, Atomic and Molecular Physics, and Optics, Wavelength, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], InGaAsP, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, business, Refractive index, Electron-beam lithography
Abstract: International audience; We present a measurement of the refractive index of In1−xGaxAsyP1−y lattice-matched to InP outside of the rangeavailable in the literature. We have accurately determined the refractive index of In1−xGaxAsyP1−y lattice-matchedto InP as a function of wavelength (λ 1.55, 2.12, and 3 μm) and arsenic molar fraction (y 0.55, 0.7, and0.72). Data is interpolated with a theoretical model and compared to the literature whenever possible. Agreementwith currently available data is good. Uncertainties are estimated, the largest one being related to the samplecomposition. We also measure propagation losses dominated by scattering (0.15–1.2 cm−1) in ridge waveguides,for the same range of compositions at wavelengths of 1.55 μm and 2.12 μm.
Published: 2018

27. All photonic-gain Optoelectronic Oscillator at 10 GHz

Author: Alexandre Garreau, K. Mezkhani, Fabien Bretenaker, Loïc Morvan, F. van Dijk, Olivier Llopis, Pascale Nouchi, J.-F. Paret, Romain Brenot, O. Lelievre, Francois Duport, F. Goldfarb, Daniel Dolfi, Philippe Charbonnier, Ghaya Baili, Perrine Berger, Vincent Crozatier, Thales Research and Technologies [Orsay] (TRT), THALES [France], Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire Aimé Cotton (LAC), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, IEEE, THALES, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-École normale supérieure - Cachan (ENS Cachan), and THALES-ALCATEL
Subjects: Optical amplifier, Materials science, Optical fiber, business.industry, Optoelectronic oscillator, dBc, 02 engineering and technology, 7. Clean energy, Noise floor, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, 020210 optoelectronics & photonics, Optical fiber amplifiers, law, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract: International audience; We present a 10 GHz optoelectronic oscillator (OEO) based on optical amplification. The setup uses a 1-km of standard optical fiber at 1.5 μm and a semiconductor optical amplifier (SOA). The phase noise is -90 dBc/Hz at 100 Hz and 132 dBc/Hz at 10 kHz, currently limited by the oscillator noise floor.
Published: 2018

28. Performance Analysis of AlxGa1-xAs/epi-Si(Ge) Tandem Solar Cells: A Simulation Study

Author: Martin Foldyna, José Alvarez, Romain Cariou, P. Roca i Cabarrocas, Gwenaëlle Hamon, Jean-Paul Kleider, Jean Decobert, Raphaël Lachaume, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES-ALCATEL
Subjects: Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Quantum dot solar cell, Epitaxy, 7. Clean energy, 01 natural sciences, Polymer solar cell, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Optics, Energy(all), law, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, silicon on III-V, 010302 applied physics, Tandem, business.industry, III-V on silicon, modeling, simulation, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Optoelectronics, tandem solar cells, 0210 nano-technology, business
Abstract: International audience; A new strategy for the development of III-V/Si tandem solar cells has recently been proposed consisting in low temperature PECVD epitaxy of silicon or silicon-germanium on gallium-arsenide. This paper thus gives first insights about theoretical but realistic maximum performance of such tandem cells by means of full numerical simulations considering perfect layers and interfaces. The consequences of using a thin epi-Si bottom cell instead of a thick silicon substrate are investigated. In case no light trapping scheme is considered, a minimum epi-layer thickness of 20 μm is mandatory for the tandem to exhibit higher conversion efficiencies than a single GaAs solar cell. The epi-Si can yet be advantageously replaced by an epitaxial silicon-germanium alloy to increase the bottom cell optical absorption and thus decrease the minimum required thickness by a factor of ∼4 (∼5 μm). Finally, simulations show that over 33% efficiency can be obtained for AlxGa1-xAs/epi-Si0.63Ge0.27, which confirms that this is a promising new concept.
Published: 2015
Full Text: View/download PDF

29. Optimized ohmic contacts for InAlGaN/GaN HEMTs

Author: Bouazzaoui, Farah, Chauvat, Marie, Morales, Magali, Zegaoui, Malek, Medjdoub, Farid, Gamarra, Piero, Kret, Slawomir, Ruterana, Pierre, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institute of Plasma Physics and Laser Microfusion [Warsaw] (IPPLM), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Alcatel Thales III-V Lab
Subjects: [SPI]Engineering Sciences [physics]
Abstract: International audience; During the last years, the most significant improvement of the contact resistance forAlInN/GaN high electron mobility has been the use of a highly doped n+ GaN layer grown bymolecular beam epitaxy for the source and drain terminals. In a first report [1], the ohmiccontact processing was carried out as follows, first the device surface was passivated using aSiN layer and then protected by SiO2. Then the contact windows were opened through theprotection and the InAlN(5.6 nm) /GaN heterostructures was then etched out to a depth of 12nm followed by a regrowth of a 40 nm thick n+ doped GaN layer by MOCVD. After removalof the residual polycrystalline GaN from the SiO2 surface, a Ti/Al/Ni/Au metal stack wasdeposited by electron-beam evaporation and annealed at 850°C for 30s in N2 which resultedin an improved contact resistance of 0.40 Ohm.mm. In a more recent work using an identicalprocedure [2], the same authors deposited, a different metallic stack based on Mo/Au andmeasured a lower contact resistance of 0.16 Ohm.mm. In this work, the Ohmic contact isfabricated in a more conventional way by first removing the passivation layers through anoptimized surface chemical cleaning procedure in ohmic region, next a Ti/Al/Ni/Au metallicstack is deposited by electron-beam evaporation and the sample is submitted to rapid thermalannealing at 875°C for 30 seconds. In our report, we shall discuss the results measured on twosamples; S1 was processed using standard surface cleaning procedure which leads routinely toa reproducible contact resistance of about 0.5-0.6 Ohm.mm. For S2, we carefully optimizedthe AlInGaN barrier surface preparation prior to the metal stack deposition resulting incontact resistances as low as 0.15-0.16 Ohm.mm. Through a detailed analysis by transmissionelectron microscopy, it is shown that, for both samples the metallic stack is transformed into amultiphase alloy, although in a different way. In S1, there is an extensive phase separationwith two dominant alloys, one AuAl rich, and the second NiAl rich. In S2, the metallicreaction leads to a homogeneous alloy of the four starting metals. Moreover, at the interfacewith the barrier extended epitaxial relationships are present with the metallic particles.Although a diffusion of Ti, Ni, and Au can be seen along screw or mixed type dislocations,the surface layer of the barrier presents extended reaction with the metals. All thiscombination is probably at the origin of the measured low contact resistance, which becomecomparable to the case where the localized MBE growth of n+ GaN has been used.
Published: 2018

30. Laser en cavité étendue par hybridation de composants actifs InP avec des composants passifs en Si3N4

Author: Boust, Sylvain, Gomez, Carmen, Paret, Jean-François, Garreau, Alexandre, Mekhazni, Karim, Forin, Catherine, Provost, Jean-Guy, Fedeli, Jean-Marc, Primiani, Peppino, Duport, François, Van Dijk, Frederic, Vallet, Marc, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), THALES [France]-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: National audience; Nous présentons une source laser hybride à 1,55 μm. Sa cavité de 2,4 mm est formée par la juxtaposition d’un amplificateur optique à semi-conducteurs sur InP et d’un miroir de Bragg contenu dans un guide d’onde en Si3N4. Le miroir de Bragg est accordable au moyen d’une chaufferette intégrée au composant, le mode d’émission laser est ainsi choisi.
Published: 2018

31. Low temperature plasma epitaxy of Silicon on III-V

Author: Hamon, Gwenaëlle, Vaissière, Nicolas, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, THALES [France]-ALCATEL, and KLEIDER, Jean-Paul
Subjects: [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2018

32. Optical trapping in 1D mesoscopic photonic crystal microcavities

Author: Olivier Gauthier-Lafaye, Giovanna Calò, Aurore Ecarnot, Vy Yam, Benedetta Ferrara, Marco Grande, Antoine Monmayrant, Giovanni Magno, Vincenzo Petruzzelli, Antonella D'Orazio, Beatrice Dagens, Politecnico di Bari, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Dipartimento di Elettrotecnica e Elettronica (DEE), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, and THALES-ALCATEL
Subjects: Materials science, Collimation, Fabry-Perot, Microcavity devices, Photonic crystals, Physics::Optics, Trapping, 01 natural sciences, Convolution, 010309 optics, chemistry.chemical_compound, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Photonic crystal, Condensed Matter::Quantum Gases, Mesoscopic physics, business.industry, Finite-difference time-domain method, Pressure-gradient force, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, Optical tweezers, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Polystyrene, business
Abstract: International audience; We propose a novel approach in optical trapping exploiting mesoscopic photonic crystal microcavities. Full light confinement in mesoscopic photonic crystal membranes, forming a mesoscopic self-collimating 1D Fabry-Pérot cavity, was theoretically predicted and experimentally verified by the authors in previous papers. In this paper, we numerically demonstrate a high performance MPhC microcavity for optical trapping of fine particulate matter in air. The MPhC cavity has been simulated by 3D FDTD simulations while the trapping potential has been evaluated by means of the gradient force density convolution method. We numerically show that it is possible to obtain very high trapping potential for polystyrene particles having radii as small as 245 nm.
Published: 2018

33. Nonlinear optoelectronic down-conversion and phase locking of mm-wave and THz signals

Author: Alouini, Mehdi, Rolland, Antoine, Brunel, Marc, Vallet, Marc, Kervella, Gaël, Van Dijk, Frederic, Ducourneau, Guillaume, Lampin, Jean-Francois, Loas, Goulc'Hen, Frein, Ludovic, Hamel, Cyril, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), IMRA America, Inc., Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018

34. Parametric Quantum-dash Source Around 3 µm

Author: Bruno Gérard, Giuseppe Leo, Olivier Parillaud, Alice Bernard, Jean-Michel Gérard, Marco Ravaro, Michel Krakowski, Ivan Favero, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Thales Research and Technology [Palaiseau], THALES [France], THALES-ALCATEL, THALES, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)
Subjects: Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Optics, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], business.industry, Dash, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Quantum, ComputingMilieux_MISCELLANEOUS, Parametric statistics
Abstract: International audience
Published: 2018

35. SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

Author: Leif Katsuo Oxenløwe, Minhao Pu, Peter David Girouard, Nicolas Olivier, Xavier Letartre, Corrado Sciancalepore, Houssein El Dirani, Christophe Jany, Elizaveta Semenova, S. Brision, Christelle Monat, Lars Hagedorn Frandsen, Kresten Yvind, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Laboratoire d'optique et biosciences (LOB), École polytechnique (X)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Department of photonics engineering, Danmarks Tekniske Universitet = Technical University of Denmark (DTU), Department of Photonics Engineering [Lyngby], European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), THALES-ALCATEL, and Technical University of Denmark [Lyngby] (DTU)
Subjects: Materials science, Silicon, Physics::Instrumentation and Detectors, Complementary metal-oxide-semiconductor (CMOS), Silicon on insulator, chemistry.chemical_element, Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Kerr-based continuum generation, 010309 optics, Frequency comb, chemistry.chemical_compound, 020210 optoelectronics & photonics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Silicon nitride (Si3N4), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Nonlinear integrated optics, Silicon photonics, Photonic integrated circuits (PICs), business.industry, Nanowires, Photonic integrated circuit, Supercontinuum, chemistry, Silicon nitride, Aluminum gallium arsenide silicon optoelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, business
Abstract: In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).
Published: 2018

36. InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Author: Alexandre Larrue, Stefano Soresi, Gwenaëlle Hamon, José Alvarez, Jean Decobert, Mauricio P. Pires, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Total S.A. Renewables, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Instituto de Física da Universidade Federal do Rio de Janeiro (IF / UFRJ), Universidade Federal do Rio de Janeiro (UFRJ), THALES [France]-ALCATEL, Alcatel-Thalès III-V lab ( III-V Lab ), Laboratoire Génie électrique et électronique de Paris ( GeePs ), Centre National de la Recherche Scientifique ( CNRS ) -CentraleSupélec-Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Université Paris-Sud - Paris 11 ( UP11 ), Instituto de Fisica, UFRJ ( IFUFRJ ), and Universidade Federal do Rio de Janeiro [Rio de Janeiro] ( UFRJ )
Subjects: Materials science, Band gap, [ SPI.MAT ] Engineering Sciences [physics]/Materials, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [ SPI.NRJ ] Engineering Sciences [physics]/Electric power, Tunnel junction, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum tunnelling, 010302 applied physics, business.industry, Photovoltaic system, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Heterojunction, Surfaces and Interfaces, Semiconductor device, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, Current density
Abstract: International audience; Multijunction solar cells based on III–V compounds are one of the most effective possibilities to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs:C/InP:S tunnel junctions are fabricated using MOVPE. Type‐II interface band alignment of AlInAs/InP heterostructure is ideal for increasing the photogenerated carriers tunneling. Furthermore, wide bandgaps ensure a high transmission of the incident light. The J–V characteristics of the final devices show very good results in terms of tunneling peak current density (1000 A cm−2) and specific resistance at low applied bias, making them compatible for photovoltaic applications.
Published: 2018
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37. Terminologie de la mesure du temps en quechua et en maya

Author: Gonzalez, Carmen, Hoppan, Jean-Michel, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Structure et Dynamique des Langues (SeDyL), Institut National des Langues et Civilisations Orientales (Inalco)-Institut de recherche pour le développement [IRD] : UR135-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: [SHS.LANGUE]Humanities and Social Sciences/Linguistics
Abstract: International audience; Les cultures inca et maya ont en commun d'avoir disposé de numérations qui permirent l'élaboration des plus grands comptes produits en Amérique précolombienne. Outre le fait que le système numéral de la première soit décimal et que celui de la seconde était vigésimal (et fut pour le coup éclipsé par le système décimal hispanique à l'époque moderne), ces cultures diffèrent toutefois en ce que l'usage des grands nombres fut dans la première essentiellement mis au service de l'administration étatique tandis que, dans la seconde, il fut exclusivement réservé au comput pour le calendrier qui régissait la vie publique dans la cité. Dans un premier temps, notre étude met en parallèle les termes de la numération dans les deux systèmes, dans un second temps le lexique des unités de temps et les liens unissant numération et calendrier.
Published: 2018

38. Evolutionary history and global spread of the Mycobacterium tuberculosis Beijing lineage

Author: Sabine Rüsch-Gerdes, Hans P eter Beck, Vladyslav Nikolayevskyy, Irina Kontsevaya, Petras Stakenas, Kadri Toit, Shinji Maeda, Eman Aleksic, Marie Ballif, Stefano Mona, Troels Lillebaek, Maryline Bonnet, Caroline Allix-Béguec, Sophie Lecher, Robin M. Warren, Isdore Chola Shamputa, Francesca Barletta, Isolina Campos-Herrero, Wei wei Jiao, Thomas Kohl, Suzanne M. Crowe, Ewa Augustynowicz-Kopeć, Solomon Ghebremichael, Branislava Savic, Francis Varaine, Dragana Vuković, Camille Blin, Annick Antierens, Li Hwei Sng, Maryse Fauville-Dufaux, Céline Wahl, Thierry Wirth, Stefan Niemann, Eve Willery, Helen Cox, Valeriu Crudu, Emanuele Borroni, Sebastien Gagneux, Philip Supply, Sven Hoffner, Adong Shen, Stobdan Kalon, Michael Rasmussen, Francis Drobniewski, Igor Mokrousov, Michael G. B. Blum, Madeleine Hanekom, Sofía Samper, Matthias Merker, Clifton E. Barry, Nicolas Duforet-Frebourg, Roland Diel, Nalin Rastogi, Daniela Maria Cirillo, Elisabeth Sanchez-Padilla, Molecular Mycobacteriology, Research Center Borstel - Leibniz Lung Center [Germany], Institut de Systématique, Evolution, Biodiversité (ISYEB ), Muséum national d'Histoire naturelle (MNHN)-Université Pierre et Marie Curie - Paris 6 (UPMC)-École Pratique des Hautes Études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Biologie Intégrative des Population, Evolution Moléculaire, École Pratique des Hautes Études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Biologie Computationnelle et Mathématique (TIMC-IMAG-BCM), Techniques de l'Ingénierie Médicale et de la Complexité - Informatique, Mathématiques et Applications, Grenoble - UMR 5525 (TIMC-IMAG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Centre National de la Recherche Scientifique (CNRS), Centre d’Infection et d’Immunité de Lille - INSERM U 1019 - UMR 9017 - UMR 8204 (CIIL), Institut Pasteur de Lille, Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Lille-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Centre National de la Recherche Scientifique (CNRS), National Reference Center for Mycobacteria, Institut Pasteur de Saint-Pétersbourg, Réseau International des Instituts Pasteur (RIIP), Centre for Biomedical Research, Burnet Institute [Melbourne, Victoria], genoscreen, GenoScreen, Medical Department, Médecins sans Frontières [Genève] (MSF), Department of Microbiology, National Tuberculosis and Lung Diseases Research Institute, Institute of Social and Preventive Medicine, Universität Bern [Bern] (UNIBE), Instituto de Medicina Tropical Alexander von Humboldt, Molecular Epidemiology Unit–Tuberculosis, Instituto de Medicina Tropical 'Alexander von Humboldt' (IMT AvH), Universidad Peruana Cayetano Heredia (UPCH)-Universidad Peruana Cayetano Heredia (UPCH), Medical Parasitology and Infection Biology [Basel, Suisse] (MPI), Swiss Tropical and Public Health Institute [Basel], Laboratoire de Recherche en Informatique d'Amiens (LaRIA), Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS), Epicentre [Paris] [Médecins Sans Frontières], Emerging Bacterial Pathogen Unit, San Raffaele Scientific Institute, hospital Universitario de Gran Canaria Dr Negrin, Macfarlane Burnet Institute for Medical Research, Laboratoire Jean Alexandre Dieudonné (LJAD), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), PHE National Mycobacterial Reference Laboratory and Clinical TB and HIV Group, Queen Mary's School of Medicine and Dentistry, Division of Infectious Diseases, Imperial College London, Centre national de Référence et Laboratoire Tuberculose et Mycobactéries = National Reference Centre of Tuberculosis and Mycobacteria [Brussels] (CNR), Institut Scientifique de Santé Publique [Belgique] - Scientific Institute of Public Health [Belgium] (WIV-ISP), Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP), MRC National Institute for Medical Research, Department of Preparedness, Swedish Institute for Infectious Disease Control, Faculty of Medicine and Health Sciences, stellen, Key Laboratory of Major Diseases in Children, Beijing Children's Hospital affiliated to Capital Medical University-Beijing Pediatric Research Institute-Chine - Ministry of Education, Samara Oblast TB Service, Research institute of Tuberculosis, Anti-tuberculosis Association, Institut Pasteur de la Guadeloupe, LAboratoire de Recherche en Mécanique Appliquée (LARMAUR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Mycobacteriology Unit, Prince Leopold Institute of Tropical Medicine, Microbiology Unit, Tropical Diseases Research Centre [Zambia] (TDRC), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Central Tuberculosis Laboratory, Singapore General Hospital, Medecins Sans Frontieres (Medecins Sans Frontieres), Médecins Sans Frontières, DTU Fotonik - Department of Photonics Engineering, Danmarks Tekniske Universitet = Technical University of Denmark (DTU), molecular biology and human genetics, Stell, Molecular Mycobacteriology Group, National Reference Center for Mycobacyeria, Origine, structure et évolution de la biodiversité (OSEB), Muséum national d'Histoire naturelle (MNHN)-Centre National de la Recherche Scientifique (CNRS), We acknowledge J. Peh for her assistance and support in the study andI. Comas for statistical advice. Parts of this work have been supported by grantsfrom the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement 278864 in the framework of the European UnionPathoNGenTrace project and grant agreement 223681 in the framework of theTB-PAN-NET project. We also thank Action Transversale du Muséum Nationald’Histoire Naturelle ‘Les Microorganismes, Acteurs Clés dans les Ecosystèmes’for financial support, European Project: 223681,EC:FP7:HEALTH,FP7-HEALTH-2007-B,TB PAN-NET(2009), European Project: 278864,FP7/2007- 2013, Muséum national d'Histoire naturelle (MNHN)-École pratique des hautes études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), École pratique des hautes études (EPHE), VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Centre National de la Recherche Scientifique (CNRS)-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Université de Lille-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut Pasteur de Lille, Universität Bern [Bern], Laboratoire Jean Alexandre Dieudonné (JAD), Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, and Technical University of Denmark [Lyngby] (DTU)
Subjects: Tuberculosis, Lineage (genetic), MESH: Mutation, MESH: Mycobacterium tuberculosis, Genotype, MESH: Biological Evolution, MESH: Global Health, Biology, MESH: Genome, Bacterial, Global Health, Genetic analysis, Mycobacterium tuberculosis, MESH: Genotype, Evolution, Molecular, Phylogenetics, Tuberculosis, Multidrug-Resistant, Genetics, Global health, medicine, Humans, MESH: Phylogeny, MESH: Evolution, Molecular, MESH: Tuberculosis, Multidrug-Resistant, Phylogeny, MESH: Humans, Ecology, Population size, medicine.disease, biology.organism_classification, [SDV.MP.BAC]Life Sciences [q-bio]/Microbiology and Parasitology/Bacteriology, Biological Evolution, 3. Good health, Mycobacterium tuberculosis/classification/genetics/isolation & purification, Evolutionary biology, Mutation, [SDV.SPEE]Life Sciences [q-bio]/Santé publique et épidémiologie, Tuberculosis, Multidrug-Resistant/epidemiology/microbiology, Genome, Bacterial, purl.org/pe-repo/ocde/ford#1.06.07 [https]
Abstract: International audience; Mycobacterium tuberculosis strains of the Beijing lineage are globally distributed and are associated with the massive spread of multidrug-resistant (MDR) tuberculosis in Eurasia. Here we reconstructed the biogeographical structure and evolutionary history of this lineage by genetic analysis of 4,987 isolates from 99 countries and whole-genome sequencing of 110 representative isolates. We show that this lineage initially originated in the Far East, from where it radiated worldwide in several waves. We detected successive increases in population size for this pathogen over the last 200 years, practically coinciding with the Industrial Revolution, the First World War and HIV epidemics. Two MDR clones of this lineage started to spread throughout central Asia and Russia concomitantly with the collapse of the public health system in the former Soviet Union. Mutations identified in genes putatively under positive selection and associated with virulence might have favored the expansion of the most successful branches of the lineage.
Published: 2015
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39. Reliability-Aware Circuit Design Methodology for Beyond-5G Communication Systems

Author: François Marc, Bertrand Ardouin, Thomas Zimmer, Chhandak Mukherjee, Muriel Riet, Cristell Maneux, Jean-Yves Dupuy, Virginie Nodjiadjim, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Equipe Commande des Systèmes (ECS), Ecole Nationale Supérieure de l'Electronique et de ses Applications, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and ANR-16-CE93-0007,ULTIMATE,Investigations des limites technologiques ultimes de l'électronique THz(2016)
Subjects: 010302 applied physics, Engineering, business.industry, Circuit design, 02 engineering and technology, Communications system, 01 natural sciences, Electronic, Optical and Magnetic Materials, Reliability engineering, 020210 optoelectronics & photonics, Robustness (computer science), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, business, 5G, ComputingMilieux_MISCELLANEOUS
Abstract: This paper focuses on efficient reliability analysis methodologies applicable for beyond-5G communication systems demonstrated on prospective terahertz (THz) technologies. Recently, a lot of the research interests have grown on optoelectronic integration which requires simultaneous management of electronic and optical modules. These technologies are evolving very rapidly, providing higher complexity, thereby increasing their susceptibility to stress environments (i.e., mutual self-heating) and finally requiring both robustness assessment and lifetime prediction under different operating conditions. Consequently, long-time reliability is a major issue. Extensive reliability assessment needs novel design methodologies that can provide reliability-aware optimization at the design level. This review discusses an extensive physics-based methodology for reliability prediction and analysis of degradation mechanisms in integrated-circuit technologies. Circuit-level design and optimization methodologies are illustrated by taking into account reliability-aware design techniques. Application examples and results are presented for an InP DHBT process, a viable technological solution for beyond-5G and THz applications.
Published: 2017

40. Effet de la détection équilibrée sur les performances d'une source optique utilisant un laser kilométrique à base de RSOA

Author: Gay, Mathilde, Bramerie, Laurent, Hussain, Kamal, Chartier, Thierry, Trebaol, Stephane, Simon, Jean-Claude, Maho, Anaëlle, Brenot, Romain, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-INFR-0002,LAMPION,Réseaux optiques passifs multi-longueur d'onde pour les réseaux d'accès mobile et métropolitains(2013), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)
Subjects: RSOA, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, RIN, laser kilométrique, télécommunications optiques
Abstract: International audience; Nous étudions le bruit d'amplitude d'une source laser à base d'amplificateur à semi-conducteur réflectif (RSOA) en cavité fibrée étendue. Nous montrons que le bruit relatif d'intensité (RIN) augmente avec la longueur de transmission. Nous montrons également qu'une détection équilibrée associée à un codage de Manchester autorise une cavité de longueur 4 km au lieu de seulement 1 km avec le format NRZ classique.
Published: 2017

41. Self-stabilized optoelectronic oscillator using optical feedback on integrated heterodyne source

Author: F. van Dijk, Mehdi Alouini, Marco Romanelli, Aurelien Thorette, Marc Vallet, P. Primiani, Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: Physics, Heterodyne, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Physics::Optics, 02 engineering and technology, Semiconductor laser theory, Amplitude modulation, Injection locking, Laser linewidth, 020210 optoelectronics & photonics, Optics, 0202 electrical engineering, electronic engineering, information engineering, Radio frequency, Photonics, business, Compatible sideband transmission
Abstract: International audience; Summary form only given. Generation of opto-RF signals through heterodyning is now firmly established, the RF frequency being provided by the beat note between two lasers. It offers true single sideband signals, 100% modulation depth and tunability. However, the use of two independent free-running lasers leads to a large RF linewidth that has to be reduced by means of stabilization schemes. In order to get spectrally pure beat note, we propose to combine passive injection locking of semiconductor lasers with opto-electronic oscillator (OEO) schemes based on optical delay-lines. We show that this leads to a semiconductor photonic oscillator, without the need for any RF electronic reference.
Published: 2017

42. Inverse Metamorphic III-V/epi-SiGe Tandem Solar Cell Performance Assessed by Optical and Electrical Modeling

Author: Pere Roca i Cabarrocas, Raphael Lachaurne, Jean Decobert, Gwenaëlle Hamon, Jean-Paul Kleider, Romain Cariou, Nicolas Vaissiere, José Alvarez, Martin Foldyna, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID
Subjects: Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Silicon, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020209 energy, chemistry.chemical_element, Inverse, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, Grating, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Sputtering, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Tandem, Computer simulation, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, Microstructure, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power, Tandem solar cell
Abstract: Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. We here propose to evaluate such tandem concept based on inverse metamorphic growth of c-Si(Ge) on GaAs by means of numerical simulation. Electrical and optical models are first faced to experimental realizations of single junction cells to calibrate material parameters and to assess the electrical quality of the epi-SiGe layer. Then the tandem structure is optimized, current matching conditions are given and the benefit of using a 2D grating at the back-side is studied.
Published: 2017

43. Investigation of the thermophysical properties of binary system CO 2 and Hydro-fluoro-olefins

Author: Artola, P.-A, Rousseau, B., Fauve, R, Houriez, C., El Ahmar, E., Coquelet, C, Laboratoire de Chimie Physique D'Orsay (LCPO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Centre Thermodynamique des Procédés (CTP), MINES ParisTech - École nationale supérieure des mines de Paris-PSL Research University (PSL), Laboratoire de Modélisation et Simulation Multi Echelle (MSME), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Université Paris-Est Marne-la-Vallée (UPEM), University of kaslik, Watroba, Marie-Claude, Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, Mines Paris - PSL (École nationale supérieure des mines de Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Université Paris-Est Marne-la-Vallée (UPEM)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), and MINES ParisTech - École nationale supérieure des mines de Paris
Subjects: [SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2017

44. Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells

Author: Pere Roca i Cabarrocas, Gwenaëlle Hamon, Nicolas Vaissiere, Romain Cariou, Jean-Paul Kleider, Wanghua Chen, Raphaël Lachaume, Jean Decobert, José Alvarez, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Laboratoire d'Intégration des Systèmes et des Technologies (LIST), and THALES-ALCATEL
Subjects: inverted metamorphic growth Paper 17006SS, Materials science, Analytical chemistry, 02 engineering and technology, Epitaxy, 7. Clean energy, 01 natural sciences, Pulsed laser deposition, [SPI.MAT]Engineering Sciences [physics]/Materials, Tunnel junction, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Metalorganic vapour phase epitaxy, plasma-enhanced chemical vapor deposition, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Plasma processing, 010302 applied physics, Renewable Energy, Sustainability and the Environment, [SPI.NRJ]Engineering Sciences [physics]/Electric power, epitaxy, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, tunnel junctions, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, tandem solar cells, 0210 nano-technology, Molecular beam epitaxy
Abstract: International audience; We fabricated (n) c-Si/ (p) GaAs heterojunctions, by combining low temperature (∼175°C) RF-PECVD for Si and metal organic vapor phase epitaxy for GaAs, aiming at producing hybrid tunnel junctions for Si/III-V tandem solar cells. The electrical properties of these heterojunctions were measured and compared to that of a reference III-V tunnel junction. Several challenges in the fabrication of such heterostructures were identified and we especially focused in this study on the impact of atomic hydrogen present in the plasma used for the deposition of silicon on p-doped GaAs doping level. The obtained results show that hydrogenation by H 2 plasma strongly reduces the doping level at the surface of the GaAs: C grown film. Thirty seconds of H 2 plasma exposition at 175°C are sufficient to reduce the GaAs film doping level from 1 × 10 20 cm −3 to
Published: 2017

45. Modelling of multijunction cells

Author: Lachaume, Raphaël, Foldyna, Martin, Hamon, Gwenaëlle, Vaissière, Nicolas, Cariou, Romain, Decobert, Jean, Roca I Cabarrocas, Pere, Alvarez, J, Kleider, Jean-Paul, Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Lachaume, Raphaël, and THALES-ALCATEL
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience
Published: 2016

46. Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes

Author: Raphaël Lachaume, Martin Foldyna, José Alvarez, Jean Decobert, Gwenaëlle Hamon, Jean-Paul Kleider, Romain Cariou, P. Roca i Cabarrocas, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris-Sud - Paris 11 (UP11), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), and THALES-ALCATEL
Subjects: Light trapping, Materials science, Silicon, Opto-electrical modeling, chemistry.chemical_element, Reflector (antenna), 02 engineering and technology, Grating, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Optics, Epitaxial silicon germanium, 0103 physical sciences, Texture (crystalline), Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Absorption (electromagnetic radiation), 010302 applied physics, TCAD, Tandem, Renewable Energy, Sustainability and the Environment, business.industry, Open-circuit voltage, Tandem solar cells, III-V on silicon, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Optoelectronics, 0210 nano-technology, business, RCWA
Abstract: International audience; Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. In this study we provide a detailed analysis of III-V/epi-SiGe tandem devices performance using opto-electrical models and parameters acquired from previous experimental realizations of single junction devices. At first, we present the validation of our top and bottom cells models by comparison with previously published solar cells. The analysis of the current matching and the impact of the Al content in AlGaAs absorber on the open circuit voltage is performed on a very wide range of thickness and Al content. The optimal configurations for tandems with thin film absorbers are found with an empirical expression. This expression relates the required bottom absorber thickness to the Al content for current matching in a flat tandem device. Low-temperature epitaxial SiGe growth on III-V materials is an inverted growth technique, meaning that the last material grown is the Si(Ge) bottom cell. We can thus easily texture the back of the bottom cell for higher photon absorption. The proposed nanostructurization of the back reflector shows that, to reach the same efficiency, only half of the thickness is required if a 2D grating is combined with a silver reflector. The detailed influence of the bulk and interface electrical quality in the epi-SiGe bottom cell is also assessed. Finally, the prediction of the tandem device performance according to different realistic scenarios is presented.
Published: 2016

47. Si1-xGex alloys on III-V (100): first steps in film growth by low temperature PECVD epitaxy

Author: Vaissière, Nicolas, Hamon, Gwenaëlle, Lachaume, Raphaël, Chen, Wanghua, Decobert, Jean, Alvarez, J, Kleider, Jean-Paul, Roca I Cabarrocas, Pere, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, Lachaume, Raphaël, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: National audience
Published: 2016

48. Electronic Transport: Electrons, Phonons and Their Coupling within the Density Functional Theory

Author: Jelena Sjakste, Virginie Trinité, Nathalie Vast, Gaston Kané, Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, and THALES-ALCATEL
Subjects: Coupling, Physics, [PHYS]Physics [physics], Thermal effective mass, Condensed matter physics, Phonon, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, Density functional theory, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2016

49. Monolithic integration on InP of a DML and a ring resonator for future access networks

Author: Nicolas Chimot, Siddharth Joshi, Jean-Guy Provost, Karim Mekhazni, Fabrice Blache, Frederic Pommereau, Catherine Fortin, Yaneck Gottesman, Luiz-Anet Neto, Mathilde Gay, Monique Thual, Francois Lelarge, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Centre National de la Recherche Scientifique (CNRS), Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Agence Nationale de la Recherche, THALES [France]-ALCATEL, Département Electronique et Physique (TSP - EPH), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)
Subjects: Resonator filters, 02 engineering and technology, Optical modulation amplitude, Optoelectronic devices, Optical switch, Passive optical network, 020210 optoelectronics & photonics, Optical fibre communication, Indium compounds, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Integrated optoelectronics, Electrical and Electronic Engineering, Optical amplifier, Physics, Semiconductor lasers, Extinction ratio, business.industry, Optical cross-connect, Optical performance monitoring, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Optical transistor, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business
Abstract: International audience; The future technology migration in access networks compels the development of key innovative transmitters operating at 10 Gb/s around 1550 nm and capable of transmitting data in extended reach passive optical networks (>60 km). A laser modulated directly appears to be a low cost and a simple solution to address these needs. However, the extinction ratio and the distance of transmission are limited by frequency chirping inherent to high bit rate modulation at 1550 nm. In this letter, we demonstrate the monolithic integration of a directly modulated lasers and a ring resonator (RR) and show the possibility to engineer the RR with specific frequency modulation efficiency. The ring is used as an optical eye reshaper, which enables the increase of the extinction ratio above 9 dB. Transmissions up to 65 km with 5.8 dBm of modulated optical power coupled into the fiber are demonstrated, proving the feasibility of our transmitter for the next generation passive optical network stage 2
Published: 2016

50. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

Author: Nada Habka, Gwenaëlle Hamon, Jean-Paul Kleider, Romain Cariou, Wanghua Chen, P. Roca i Cabarrocas, Nicolas Vaissiere, José Alvarez, Raphaël Lachaume, Jean Decobert, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), KLEIDER, Jean-Paul, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, and THALES [France]-ALCATEL
Subjects: Materials science, Silicon, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Band gap, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, Epitaxy, 7. Clean energy, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, Tunnel junction, 0103 physical sciences, Solar cell, Crystalline silicon, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Tandem, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract: Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si 1−x Ge x ). The choice of Al y Ga 1−y As as the top material is justified because it provides the optimum bandgap combination with Si 1−x Ge x (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.
Published: 2016

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