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1. Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation

2. Novell embedded microbump approach for die-to-die and wafer-to-wafer interconnects with variable microbump diameters and down to 5 um interconnect pitch scaling

3. A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

6. Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

10. Integration and dielectric reliability of 30nm ½ pitch structures in Aurora ®LK HM

13. Wetting performance on patterned substrates : experimental and numerical study

16. Heterometallic Werner complexes as energetic materials.

17. Sterically-controlled regioselective para-substitutions of aniline.

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