107 results on '"Sleeckx, E."'
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2. THE CONSENS PROJECT: A METHODOLOGY AND INTEGRATION PLATFORM TO OPTIMISE TIME, QUALITY AND COST IN THE CONCURRENT PRODUCT DEVELOPMENT PROCESS
3. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
4. Enabling Technologies II: CONSENS Tools
5. Barrier and seed repair performance of thin RuTa films for Cu interconnects
6. Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration
7. Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
8. Optimization of low temperature silicon nitride processes for improvement of device performance
9. Impact of LKD5109™ low- k to cap/liner interfaces in single damascene process and performance
10. Characterisation and integration feasibility of JSR’s low- k dielectric LKD-5109
11. Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric
12. Temperature dependence of the optical gap in thin amorphous films of As2S3, As2Se3 and other basic non-crystalline chalcogenides
13. Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology
14. On the optical constants of amorphous Ge xSe 1− x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition
15. Impact of the combination of stress buffer layer and wafer level underfill on 3D IC assembly using thermal compression bonding
16. Characterization of inorganic dielectric layers for low thermal budget wafer-to-wafer bonding
17. Numerically Optimized Double Layer Antireflective Coating for High Efficiency Interdigitated Back Contact (IBC) Silicon Solar Cells
18. Cost Effective Dry Oxidation for Emitter Passivation: A Key Step for High Efficiency Screen Printed p-Type PERC Solar Cells
19. Overview on Recent Improvement for Industrially Applicable PERL-Type Si Solar Cell Processing
20. Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal
21. 3D IC process development for enabling chip-on-chip and chip on wafer multi-stacking at assembly
22. Challenges and solutions on pre-assembly processes for thinned 3D wafers with micro-bumps on the backside
23. Reliability of 3D package using wafer level underfill and low CTE epoxy mold compound materials
24. Deposited silicon-on-insulator material technology for photonic integrated circuitry
25. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
26. Impact of thinning and through silicon via proximity on High-k / Metal Gate first CMOS performance
27. Self Aligned CuGeN Process for 32/22nm Nodes and Beyond
28. Performance improvement of tall triple gate devices with strained SiN layers
29. Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing
30. High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM.
31. Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers
32. Electrical Characterisation of Silicon-Rich-Oxide Based Memory Cells Using Pulsed Current-Voltage Techniques
33. On the scalability of source/drain current enhancement in thin film sSOI.
34. Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line.
35. Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric
36. Integration feasibility of porous SiLK* semiconductor dielectric
37. Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells.
38. Temperature dependence of the optical gap in thin amorphous films of As 2 S 3 , As 2 Se 3 and other basic non-crystalline chalcogenides
39. On the optical constants of amorphous GexSe1−x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition
40. Photodarkening induced at low temperatures in amorphous GexSe100−x films
41. Optical properties of amorphous Se films prepared by PECVD
42. Holographic investigations of photoinduced changes in PECVD GeSe thin films
43. Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films
44. Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100-x films
45. Optical gap and Urbach edge slope in a-Se
46. The influence of temperature on the optical absorption edge shift induced by band‐gap illumination in thin amorphous GeSe2 films
47. A review of the specific role of oxygen in irreversible photo- and thermally induced changes of the optical properties of thin film amorphous chalcogenides
48. Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films
49. Structural and optical properties of amorphous selenium prepared by plasma-enhanced CVD
50. Plasma-enhanced chemical vapour deposition of amorphous GexSe1−x films
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