Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line.

Details

Language :

English

ISBNs :

9780780384781

Database :

Complementary Index

Journal :

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

Publication Type :

Conference

Accession number :

81238697

Full Text :

https://doi.org/10.1109/ESSDER.2004.1356521