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Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells.

Authors :
Rosmeulen, M.
Sleeckx, E.
De Meyer, K.
Source :
Digest. International Electron Devices Meeting; 2002, p189-192, 4p
Publication Year :
2002

Details

Language :
English
ISBNs :
9780780374621
Database :
Complementary Index
Journal :
Digest. International Electron Devices Meeting
Publication Type :
Conference
Accession number :
81599211
Full Text :
https://doi.org/10.1109/IEDM.2002.1175810