27 results on '"Semeria, M.N"'
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2. Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates
3. Influence of carrier and doping gases on the chemical vapor deposition of silicon quantum dots
4. Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments
5. Optical characterization of laser processed ultra-shallow junctions
6. Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors
7. Influence of carrier and doping gases on silicon quantum dots nucleation
8. Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 μm photo-detection
9. Nucleation control of CVD growth silicon nanocrystals for quantum devices
10. Effect of HCl on the SiGe growth kinetics in reduced pressure—chemical vapor deposition
11. SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition
12. Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices
13. Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques†
14. Carbon FED requirements — application to a PLD carbon cathode
15. Reduced pressure chemical vapor deposition of Si/Si(sub 1-y)C(sub y) heterostructures for n-type metal-oxide-semiconductor transistors
16. Influence of the chemical properties of the substrate on silicon quantum dots nucleation
17. Control of silicon nano-crystals nucleation and growth by chemical vapor deposition
18. Si quantum dots growth on Al2O3 dielectric; integration in memory devices
19. Electronic properties of silicon nanocrystallites obtained by SiOx (x<2) annealing
20. Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions
21. High performance 40 nm nMOSFETs with HfO2 gate dielectric and polysilicon damascene gate.
22. Silicon nanocrystals precipitation in a SiO2 matrix elaborated from the decomposition of LPCVD SiOx.
23. Excimer-laser activation of dopants in silicon: a new concept for a uniform treatment over a whole die area.
24. Silicon nanocrystals precipitation in a SiO/sub 2/ matrix elaborated from the decomposition of LPCVD SiO/sub x/
25. How far will silicon nanocrystals push the scaling limits of NVMs technologies?
26. Excimer-laser activation of dopants in silicon: a new concept for a uniform treatment over a whole die area
27. High performance 40 nm nMOSFETs with HfO/sub 2/ gate dielectric and polysilicon damascene gate
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