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High performance 40 nm nMOSFETs with HfO2 gate dielectric and polysilicon damascene gate.
- Source :
- Digest. International Electron Devices Meeting; 2002, p429-432, 4p
- Publication Year :
- 2002
Details
- Language :
- English
- ISBNs :
- 9780780374621
- Database :
- Complementary Index
- Journal :
- Digest. International Electron Devices Meeting
- Publication Type :
- Conference
- Accession number :
- 81599266
- Full Text :
- https://doi.org/10.1109/IEDM.2002.1175870