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Excimer-laser activation of dopants in silicon: a new concept for a uniform treatment over a whole die area.
- Source :
- Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C); 2001, p91-94, 4p
- Publication Year :
- 2001
Details
- Language :
- English
- ISBNs :
- 9784891140199
- Database :
- Complementary Index
- Journal :
- Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)
- Publication Type :
- Conference
- Accession number :
- 81135024
- Full Text :
- https://doi.org/10.1109/IWJT.2001.993835