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375 results on '"Salvestrini, Jean Paul"'

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1. On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact

2. High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE

3. Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study

5. Boosting III-Nitride Solar Cell Efficiency Using a Semibulk Absorber and Piezo-Phototronic Effect

10. Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self‐Powered PIN BGaN/GaN Superlattice‐Based Neutron Detectors.

11. Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

12. Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS

15. Electro-optic and electrical properties in Hafnium-doped congruent lithium-niobate crystals

22. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

24. Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives

25. Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

26. MOVPE growth of h-BN on patterned sapphire substrates and its application on selective area growth of GaN based LEDs structures

27. Effect of aluminium diffusion into 2D hBN on the mechanical release of III-N heterostructures

28. Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances

30. Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices

31. Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors

32. Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives

33. Epitaxial growth and materials characterization of single crystalline boron rich B(AI)N ternary alloys

34. Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

36. Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component

38. Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

39. Frequency dispersion of electro-optical properties over a wide range by means of time-response analysis

40. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

41. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

44. A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors

45. Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)

46. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN

48. Model of Ni-63 battery with realistic PIN structure.

49. Betavoltaic batteries based on Ni-63 Beta decay coupled with GaN e-convertor for pacemaker

50. Heterogeneous integration of III-N-based devices on foreign substrates with enhanced performance

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