Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives

Authors :: Vuong, Thi Quynh Phuong
Mballo, Adama
Karrakchou, Soufiane
Srivastava, Ashutosh
Gujrati, Rajat
Adjmi, Hibat
Sundaram, Suresh
Voss, Paul
Salvestrini, Jean-Paul
Ougazzaden, Abdallah
Georgia Tech Lorraine [Metz]
Université de Franche-Comté (UFC)
Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS)
DASTILLUNG, NADEGE
Source :: Workshop Wide bandgap materials, Workshop Wide bandgap materials, May 2021, Wuhan, China
Publication Year :: 2021
Publisher :: HAL CCSD, 2021.
Abstract: conférence invitée; International audience

Subjects :: [SPI]Engineering Sciences [physics]
[SPI] Engineering Sciences [physics]

Language :: English
Database :: OpenAIRE
Journal :: Workshop Wide bandgap materials, Workshop Wide bandgap materials, May 2021, Wuhan, China
Accession number :: edsair.dedup.wf.001..197932433571a38e97da70af353e7c67

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