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Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using a 0.15 μm GaAs process. One circuit utilizes diode techniques while the other utilizes field effect transistor (FET) techniques. The diode single-pole double-throw switches that have been devised exhibit exceptional linearity and are capable of withstanding high power levels. The switches exhibit a return loss of 10 dB or higher, an insertion loss of 3 dB or lower, and operate within a frequency range of 19 GHz to 25 GHz. They have a compact design with a core size of only 1.05 mm2 and consume a total power of 136.8 mW. The FET SPDT switch circuits are created utilizing a parallel–parallel quarter-wavelength transmission line architecture. This design allows for a higher power output compared to using a diode. The transistorized single-pole double-throw switch circuit is designed using a parallel–parallel quarter-wavelength transmission line architecture. This design ensures a low insertion loss. By adjusting the length of the transmission line, the circuit can operate in both frequency bands; the K-band and Ka-band. [ABSTRACT FROM AUTHOR]

Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using a 0.15 μm GaAs process. One circuit utilizes diode techniques while the other utilizes field effect transistor (FET) techniques. The diode single-pole double-throw switches that have been devised exhibit exceptional linearity and are capable of withstanding high power levels. The switches exhibit a return loss of 10 dB or higher, an insertion loss of 3 dB or lower, and operate within a frequency range of 19 GHz to 25 GHz. They have a compact design with a core size of only 1.05 mm2 and consume a total power of 136.8 mW. The FET SPDT switch circuits are created utilizing a parallel–parallel quarter-wavelength transmission line architecture. This design allows for a higher power output compared to using a diode. The transistorized single-pole double-throw switch circuit is designed using a parallel–parallel quarter-wavelength transmission line architecture. This design ensures a low insertion loss. By adjusting the length of the transmission line, the circuit can operate in both frequency bands; the K-band and Ka-band.

We propose a single-pole double-throw (SPDT) switch with low insertion loss (IL), high isolation, and high linearity for a 28 GHz 5G new radio. The transmit (TX) path is a π-network consisting of a parallel dynamic-threshold metal–oxide–semiconductor (DTMOS) transistor, M1, with large body-floating resistance, RB (DTMOS-R M1), a series one-eighth-wavelength (λ/8) transmission line (TL), and a parallel capacitance, Cant. The series λ/8-TL in conjunction with the parallel Cant and transistors' capacitance constitute an equivalent λ/4-TL with a characteristic impedance of 50 Ω. This leads to low IL in the TX mode and decent isolation in the receive (RX) mode. The RX path is an L-network constituting a series impedance (of parallel inductance L1 and DTMOS-R M2) and a parallel DTMOS-R M3. This leads to a decent IL in the RX mode and isolation in the TX mode. The first SPDT switch (SPDT SW1) is designed and implemented in a 90 nm complementary metal–oxide–semiconductor (CMOS) with a top metal thickness (TMT) of 3.4 μm. A comparative SPDT switch (SPDT SW2) in a 0.18 μm CMOS with a thinner TMT of 2.34 μm is also designed and implemented. In the TX mode, SPDT SW1 achieves a measured IL of 0.67 dB at 28 GHz and 0.58–1 dB for 17–34.9 GHz and a measured isolation of 44.3 dB at 28 GHz and 25.6–62.3 dB for 17–34.9 GHz, one of the best IL and isolation results ever reported for millimeter-wave CMOS SPDT switches. The measured input 1 dB compression point (P1dB) is 28.5 dBm at 28 GHz. Moreover, in the RX mode, SPDT SW1 attains a measured IL of 1.9 dB at 28 GHz and 1.83–2.1 dB for 25–38.3 GHz and an isolation of 25 dB at 28 GHz and 24.5–27 dB for 25–38.3 GHz. The measured P1dB is 24 dBm at 28 GHz. [ABSTRACT FROM AUTHOR]

This study introduces innovative designs for frequency-reconfigurable antennas that utilize ring resonators combined with either PIN diodes or RF switches. These designs enhance the versatility, adaptability, and overall performance of the antennas in wireless communication systems. By controlling the switches and ring resonator, the antenna's resonant frequencies and bandwidths can be adjusted, allowing for compatibility with various communication standards and frequency ranges. The proposed antenna exhibits four distinct operational states, each characterized by different resonance frequencies and operating frequency bands. Return loss, radiation pattern, radiation efficiency, and surface current distribution are analyzed for each state. State-1 (ON-ON) and State-2 (OFF-ON), which are characterized by resonance frequencies of 2.4 GHz and 3.33 GHz respectively, offer ranges suitable for Wi-Fi, Bluetooth, ISM, and IoT applications. State-3 (ON-OFF), with a resonance frequency of 3.0 GHz and bandwidth spanning from 2.59 GHz to 3.643 GHz, complies with Wi-Fi, Wi-Fi 6, and IoT requirements. State-4 (OFF-OFF) covers the band centered around 3.45 GHz. It is compatible with many applications such as 5G mid-band, Wi-Fi 6E, IoT, and cellular systems. The proposed antenna designs are versatile and compact since the overall antenna dimensions are 25 × 18 × 1.6 mm3. The radiation efficiency of the antenna configuration varies depending on operational states. By utilizing the advantages of both ring resonators and RF switches, the proposed antenna configurations offer new solutions that enhance their performance in wireless communication systems. This study compares the effects of using PIN diodes and SPDT switches on the performance of antennas and also examines the DC biasing effect on antenna characteristics. The simulation results are validated by the experimental analysis. The proposed antenna designs offer a new approach for wireless communication systems by using both ring resonators and RF switches. [ABSTRACT FROM AUTHOR]

The article presents a compact multifunctional power divider loaded with short‐ended stub for RF front end system at 2.5 GHz application. The proposed structure consists of PIN diodes and short‐ended stub at the output transmission line. Wilkinson power divider and SPDT switch at 2.5 GHz can be achieved by changing the bias voltage of the integrated PIN diodes. As the proposed design transitions from a power divider to an SPDT switch, a short stub is introduced at the output ports to prevent mismatches from occurring. The proposed SPDT switch design has been mathematically analyzed and presented in detail. Two frequency component functions are combined in a small package with three RF connectors. This proposed design is constructed and characterized for experimental‐demonstration purposes. The method proposed in this article is simpler compared to the previous work and easy to fabricate. This technique will reduce the overall size and manufacturing cost. It also can be applied to design the multifunctional power divider at any desired specifications and operating frequencies that compatible with RF/microwave applications, such as smart antennas and phase‐array antennas. [ABSTRACT FROM AUTHOR]

For duplex using the antenna in a wireless transceiver, a transmit/receive (Tx/Rx) switch is usually adopted for selecting transmitter or the receiver chain. This paper proposes a single-pole double-throw (SPDT) Tx/Rx switch which was implemented by using Taiwan Semiconductor Manufacturing Company Limited (TSMC) 90-nm complementary metal–oxide–semiconductor (CMOS) process technologies for 60-GHz application purpose. The proposed SPDT Tx/Rx switch adopted the leakage cancellation method and the body bias technique to improve its performance. Transistors in parallel layout strategy were employed to reduce the on-state resistance, and the off-state parasitic capacitance was eliminated by using a parallel inductor for resonance. To achieve the required leakage cancellation, two lumped π-shape 90° phase shifters were inserted in an auxiliary path. In the 57 to 64 GHz frequency range, the measured results under Tx mode show an insertion loss less than 3.2 dB between antenna (Ant) and Tx ports, an isolation larger than 21.3 dB between Tx and Rx ports, and an isolation larger than 19.1 dB between Ant and Rx ports, respectively. The measured input return losses are 11.5–13.7 dB for the Ant port and 12.2–13 dB for the Rx or Tx ports, respectively. The simulated input 1-dB compression point (P1 dB) is 15.4 dBm. [ABSTRACT FROM AUTHOR]

A double-shunt branch switch structure based on the filter optimization method is introduced to lower the insertion loss. Each branch consists of a series quarter-wavelength impedance converter and a shunt switch device. A distributed Single-Pole Double-Throw (SPDT) switch MMIC treated as a filter issue with this optimization method is implemented in a 0. 15 µm GaAs pHEMT technology for the millimeter-wave applications. The chip size of the presented switch is 2. 1 mm×1. 1 mm. Measurement results show that the SPDT switch exhibits less than 1. 3 dB of insertion loss, greater than 23dB of isolation and better than 10 dB of input and output return loss in the frequency range from 23 to 30 GHz. [ABSTRACT FROM AUTHOR]

A 24-30 GHz monolithic integrated Single-Pole Double-Throw (SPDT) switch based on 100 nm Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) process is presented in this paper. This switch adopts a quarter-wavelength microstrip line with parallel HEMT devices topology. By using two-stage parallel HEMT design, the SPDT achieves greater isolation while maintaining good Insertion Loss (IL).With a control voltage of 0/-5 V, the measured IL of this SPDT is less than 1. 5 dB, the isolation is greater than 28 dB, and the input power 1 dB compression point is greater than 27 dBm within 24-30 GHz 5G millimeter-wave frequency bands. The measurement results well verify the simulations. [ABSTRACT FROM AUTHOR]

A travelling-wave concept is applied to a new design for the single-pole double-throw microwave broadband switches. All the previously published works are based on cascading several Tsection filters using image parameter filtering design to construct the switch, while the proposed design in this work is formed using π-filtering networks instead of T-networks, and replaces the classical image parameter design method by the maximally flat Butterworth design method. This is the first time to use such topology in the structure of the travelling-wave switches. As the results show, it provides the optimal design in the considerations of low insertion loss, high isolation, wideband operation, linear response, and small layout size. It is very suitable for monolithic microwave integrated circuits in the next generation of wireless and mobile communications, and in the radar applications. [ABSTRACT FROM AUTHOR]

In this paper, a reconfigurable ring resonator‐based filter integrated switch (FIS) was presented. The FIS was made up of two absorptive ring resonators, reconfiguring between band‐stop and band‐pass responses, and integrated with single pole double throw (SPDT) switch. A simple mathematical analysis of isolation and insertion loss of filter‐integrated SPDT switch was discussed. PIN diodes were used as the switching elements for the SPDT switch and to reconfigure between the band‐stop and band‐pass responses. The proposed absorptive FIS design could be used for wireless data communication systems such as Zigbee and Bluetooth at an operation frequency of 2.45 GHz. As a result, the proposed FIS exhibited 2 dB of insertion loss and better than 38 dB of isolation. Therefore, the key advantages of the proposed FIS design are low insertion loss, high isolation and good return loss at both ON‐ and OFF‐state ports. [ABSTRACT FROM AUTHOR]

Memristor resembles an artificial synapse and is considered to be basic electronic element for realizing neuromorphic circuits. In this work, a systematic investigation was conducted on memristor-based resistance-programming circuits to write analog data into a memristor utilizing pulse width modulation techniques. The high-frequency sinusoidal signal was utilized to read the data in the form of its electronic resistance. An optimum circuit configuration demonstrated multilevel stable resistive states, which are analogous to the connection weights in the human synapse. In order to modulate these memristive weights for representing the learning activities in human brain synapse, it was identified that the pulse width modulation technique is superior as compared to spike-timing-dependent plasticity. Further, the above analysis was utilized in training the memristor to update its resistive weights in consonance with its learning, analogous to that in a neural network. Further, the memristive crossbar architecture was utilized to implement a real-time application in Econometrics, where an array of memristors were utilized to learn and update the purchase trends of an N × L matrix of customers. The proposed circuits possess the advantages of high packing density, low power consumption and nonvolatility, and also pave the way for developing future neuromorphic circuits. [ABSTRACT FROM AUTHOR]

In this paper, performance analysis of switching and matching stubs was done to a reconfigurable power divider with Single Pole Double Throw (SPDT) switch function. Two designs (Design A and Design B) with different positions of switches and matching stubs were proposed. Rogers RO4350 (er=3.48, h=0.508 mm) was used in this analysis as a substrate material with copper thickness of 0.035 mm. The performance analysis was carried out based on insertion loss, return loss and isolation parameters. The simulated results showed that Design B had a better performance than Design A and was able to work as a reconfigurable power divider with SPDT switch function. [ABSTRACT FROM AUTHOR]

Abstract: A fully integrated wideband concurrent dual‐band single‐pole double‐throw (SPDT) switch with integrated dual‐band band‐pass filtering has been developed over two wide bandwidths around 24 and 60 GHz in a 0.18‐µm SiGe BiCMOS process. The developed concurrent dual‐wideband SPDT switch is configured to make it approximately equivalent to a dual‐band resonator in the on‐state operation. It exhibits measured insertion losses and isolations of 5.4 and 31.4 dB, and 5.2 and 16.5 dB at 24 and 60 GHz, respectively. The measured peak stop‐band rejection between the two pass‐bands is 26 dB at 42.3 GHz. With single‐tone 24‐ or 60‐GHz input, the measured input 1‐dB compression points (P1dB) are 20.4 and 17.1 dBm at 24 and 60 GHz, respectively. For concurrent dual‐tone 24‐ and 60‐GHz input, the measured input P1dBs are 17 and 14.5 dBm at 24 and 60 GHz, respectively. The measured input third‐order intercept points are 29.4 and 26.8 dBm at 24 and 60 GHz, respectively. [ABSTRACT FROM AUTHOR]

This paper proposes a quasi-elliptic bandpass filter-integrated single-pole double-throw (SPDT) switch. The series-parallel configuration of p-i-n diodes embedded into the impedance matching circuit is proposed to combine two quasi-elliptic response bandpass filters to constitute the proposed SPDT switch. To validate our design approach, a proposed quasi-elliptic bandpass filterintegrated SPDT switch is designed and fabricated with a central frequency of 1.25 GHz and a 3 dB fractional bandwidth of 16%. Low insertion loss in the on state and good isolation in the off state are achieved. The switch size including bias circuits but excluding feeding lines is 0.447λg × 0.134λg. [ABSTRACT FROM AUTHOR]

In this paper, an analysis of open stub resonator is presented and its application in dual isolation band of Single Pole Double Throw (SPDT) switch is proposed. A mathematical model and the characteristic of the bandstop of the resonator were analyzed and discussed. The open stub resonator was implemented using the microstrip transmission line and able to switch between bandstop and allpass responses. Frequency bands of 2.3 and 3.5 GHz were chosen to demonstrate the dual isolation band in the switch design. The performance results of the SPDT switch showed that the isolation was greater than 30 dB, return loss was greater than 10 dB and insertion loss less than 2 dB at the center resonant frequency of 2.3 and 3.5 GHz. The potential application of the proposed dual isolation band of SPDT switch is for multi band RF front-end system such as WiMAX, LTE, WiFi and HyperLAN. [ABSTRACT FROM AUTHOR]

This letter proposes a broadband high isolation and high power compact single pole double throw (SPDT) switch. In contrast to the traditional structure of grounded source pad, the source pad of the shunt-stacked FET is absorbed into the transmission line, and the drain of the shunt-stacked FET is grounded to a via-hole. This structure helps to extend the operation bandwidth and reduce the chip size. The proposed SPDT switch is composed of six shunt-stacked FET units on each branch with this novel structure. Stacked FETs technique increases the voltage handling by placing two FETs in series. It has been fabricated using a commercial 0.1~\boldsymbol \mu \textm GaAs pseudomorphic high-electron-mobility transistor (PHEMT) process. The chip size is $1.2\times 0.8$ mm2. The switch operates at the frequency range of 35–70 GHz with less than 3 dB insertion loss and more than 40-dB isolation. The switch demonstrates a 1 dB insertion loss compression with a 20.2 dBm input power at 31 GHz. The isolation is larger than 30 dB from 10 to 95 GHz. To the best of the authors’ knowledge, this broadband isolation performance is among the best of the reported SPDT switches. [ABSTRACT FROM PUBLISHER]

This paper presents the design and implementation of a single-pole, double-throw transmit/receive (T/R) switch for X-Band (8-12 GHz) phased array radar applications. The T/R switch was fabricated in a 0.25-µm SiGe BiCMOS process and occupies 0.44-mm2 chip area, including pads. The design focuses on the techniques, primarily, to achieve higher power handling capability (P1dB), along with higher isolation and better insertion loss (IL) of the T/R switch. These techniques include resistive-body floating, using on-chip impedance transformation networks and DC biasing of all terminals of the T/R switch. In addition, optimization of transistor widths and parallel resonance technique are used to improve IL and isolation, respectively. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 34.8 dB and IP1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this paper presents the single-ended CMOS T/R switch with the highest IP1dB, competitive isolation and comparable IL at X-Band, compared to other reported works in the literature and attributed to the unique design methodologies and techniques. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and simulated power-handling capability of 13.8 dBm at 60 GHz. The proposed SPDT switch demonstrates such superior performances and consumes a much smaller die area to those of other SPDT switches, and therefore has potential to be used in highly integrated 60-GHz CMOS radios. [ABSTRACT FROM AUTHOR]

Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 5.0 V and a large resistance at the receivers and antennas (ANTs) to detect the signal. A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage. Hence it is not suitable for modern portable devices which demand lesser power consumption. Therefore, we proposed a new Double-Pole Four-Throw (DP4T) switch by using RF CMOS technology and analyzed its performance. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and area could be reduced as compared to already existing switch configuration as SPDT and Double-Pole Double-Throw (DPDT) transceiver switches, which is simply a reduction of signal strength during transmission of the RF signals. The presented result for the proposed DP4T switch reveals the peak output currents (drain current) around 0.116-0.387 mA and a switching speed of 19-36 ps. [ABSTRACT FROM AUTHOR]

This paper presents an ultra-low-loss 50–70 GHz single-pole double-throw (SPDT) switch built using a standard 90~nm CMOS process. The switch is based on \lambda/4 transmission lines with shunt inductors at the output matching network. The SPDT switch results in a measured insertion loss of 1.5–1.6 dB at 53–60 GHz and <2.0 dB at 50–70 GHz. The measured isolation is >25 dB, and the output port-to-port isolation is >27 dB at 50–70~GHz. The measured P1dB is 13.5 dBm with a corresponding IIP3 of 22.5 dBm at 60 GHz. The return loss is better than -8 dB at 50–70 GHz. The active chip area is 0.5\, \times \,0.55 mm^2 and can be reduced in future designs by folding the on \lambda/4 transmission lines. To our knowledge, this paper presents the lowest insertion loss 60 GHz SPDT in any CMOS technology. [ABSTRACT FROM PUBLISHER]

This paper presents a Ka band 4-Channel transceiver with 6-bit amplitude and phase control using a 0.13-μm SiGe BiCMOS process. The transmit/receive (TX/RX) channel consists of single-pole double-throw (SPDT) switch, 6-bit passive phase shifter (PS), 6-bit passive attenuator (ATT), low noise amplifier (LNA), power amplifier (PA), and driver amplifier (AMP). Through the virtual negative voltage bias and transmission-line based phase shifter, an RMS phase error less than 3° is achieved with 5.6° steps at 32–40 GHz. The amplitude control operates with 0.5 dB steps while maintaining an RMS gain error of 0.4 dB. The transceiver also integrates serial peripheral interface (SPI), power manager and temperature sensor. The transmitter consumes 28 mA from a 3.3 V supply, and the receiver consumes 16 mA from a 3.3 V supply, 35 mA from a 5 V supply. The chip occupies an area of 5.8 × 2.7 mm2. [ABSTRACT FROM AUTHOR]

ABSTRACT This article proposes a new type of GaN HEMT-based high power phase shifter operating at X-band. The design includes a 22.5° phase shift network and a high power SPDT switch. The design and resulting performance are discussed in detail and are confirmed by experimental and simulation results, which are in good agreement up to 20 GHz. The one bit phase shifter exhibits good phase performance, insertion loss, and return loss. The proposed phase shifter MMIC has been successfully demonstrated using a 0.5 μm gate GaN HEMT process. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:347-350, 2014 [ABSTRACT FROM AUTHOR]

ABSTRACT This article presents a new GaN HEMT-based high-power single-pole double-throw (SPDT) switch operating over the X-band frequencies. The GaN SPDT MMIC switch is presented, having good return loss (better than 16.8 dB) and insertion loss (1.4 dB) measured across X-band. It also has a very high power-handling capability, with a measured 1 dB compression point of 38 dBm. The techniques and design principles leading to this level of performance are discussed. Circuit performance is confirmed by experimental and simulation results, which are in good agreement up to 20 GHz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2093-2095, 2013 [ABSTRACT FROM AUTHOR]

A fully integrated single-pole-double-throw transmit/receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P1 dB) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 times 0.42 mm 2 including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs [ABSTRACT FROM PUBLISHER]

A T/R switch, fabricated using standard 0.25-μm CMOS process, for ultra wide-band (UWB) wireless communications is presented. The switch is designed based on the concept of synthetic transmission line, utilizing both CPW and CMOS transistors, to achieve not only an extremely wide bandwidth but also a linear phase response necessary for time-domain UWB applications. On-chip measurement is completed in both frequency and time domains. Frequency-domain measured results show insertion loss of 2.2-4.2 dB, isolation from 34-48 dB, and highly linear transmission phase from 0.45 MHz to 13 GHz. These results are quite consistent with the calculations. Particularly, the time-domain pulse measurement shows that the output pulses resemble closely the input pulses with very little reflection, demonstrating the switch's suitability for true time-domain UWB applications. The developed switch is ready to be integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications. [ABSTRACT FROM PUBLISHER]

A 24-GHz-band, three-dimensional microwave monolithic integrated circuit (MMIC) bi-phase modulator, that is a combination of an active 0/π splitter and a SPDT switch, is proposed and demonstrated. Comparing conventional K-band bi-phase modulators, this modulator is broadband, significantly MMIC compatible, and shrinks its chip area. A fabricated bi-phase modulator exhibits an area of 1.0×0.7mm2 and a 1-dB bandwidth of nearly 10GHz. The SPDT switch is optimized in control-gate's time constant so that a very clear bi-phase modulated waveform can be generated from 1Gbps PN code. The insertion loss and the phase imbalance are 6.4 dB+/-0.6 dB and within 10°, respectively, between 22GHz and 32GHz. [ABSTRACT FROM PUBLISHER]

Experimental results of a series-connected single pole double throw (SPDT) switch in a novel punched-hole-structure (PHS) are presented. In the PHS, the dielectric and ground layers are punched out in a specific size from the microstrip line, and diodes are placed over the punched holes to connect the microstrip lines. Radio performance of the novel SPDT switch can be improved due to additional L-C parameters introduced by the punched holes. When the radius of punched hole is the same as the width of microstrip line, 0.03 λc (λc: wavelength of 2.7 GHz), the implemented SPDT switch shows an increase of about 20-dB isolation between two output ports, compared to a conventional SPDT switch without holes. Furthermore, by tuning capacitors around the punched holes, the operating frequency band can be widened by approximately 250% in the SPDT. [ABSTRACT FROM PUBLISHER]