Back to Search
Start Over
Design and Analysis of K-Band Single-Pole Double-Throw Switches Based on GaAs Technology
- Source :
- Crystals, Vol 14, Iss 7, p 657 (2024)
- Publication Year :
- 2024
- Publisher :
- MDPI AG, 2024.
-
Abstract
- Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using a 0.15 μm GaAs process. One circuit utilizes diode techniques while the other utilizes field effect transistor (FET) techniques. The diode single-pole double-throw switches that have been devised exhibit exceptional linearity and are capable of withstanding high power levels. The switches exhibit a return loss of 10 dB or higher, an insertion loss of 3 dB or lower, and operate within a frequency range of 19 GHz to 25 GHz. They have a compact design with a core size of only 1.05 mm2 and consume a total power of 136.8 mW. The FET SPDT switch circuits are created utilizing a parallel–parallel quarter-wavelength transmission line architecture. This design allows for a higher power output compared to using a diode. The transistorized single-pole double-throw switch circuit is designed using a parallel–parallel quarter-wavelength transmission line architecture. This design ensures a low insertion loss. By adjusting the length of the transmission line, the circuit can operate in both frequency bands; the K-band and Ka-band.
- Subjects :
- K-band
GaAs
SPDT switch
Crystallography
QD901-999
Subjects
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 14
- Issue :
- 7
- Database :
- Directory of Open Access Journals
- Journal :
- Crystals
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.2582d16b10f24f95a81add696442e031
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/cryst14070657