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2 results on '"Ruo-Chun Hong"'

1. Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Author

Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, and Min-Hung Lee

Subjects
Ferroelectric, negative differential resistance, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (

Published
2018
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2. Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Author

H.-Y. Chen, C.-Y. Liao, Ming-Han Liao, Shu-Tong Chang, Zheng-Ying Wang, Yu-Chen Chou, Ruo-Chun Hong, Min-Hung Lee, C. Lo, Pin-Guang Chen, Siang-Sheng Gu, Shih-Yao Chen, Kai-Shin Li, Kuan-Ting Chen, and Gao-Yu Siang

Subjects
Materials science, Silicon, Annealing (metallurgy), Silicon on insulator, chemistry.chemical_element, Drain-induced barrier lowering, 02 engineering and technology, 01 natural sciences, Capacitance, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, Subthreshold conduction, business.industry, 021001 nanoscience & nanotechnology, Ferroelectricity, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Field-effect transistor, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, negative differential resistance, lcsh:TK1-9971, Biotechnology, Ferroelectric
Abstract

Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (

Published
2018

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