Back to Search
Start Over
Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
- Source :
- IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (
- Subjects :
- Materials science
Silicon
Annealing (metallurgy)
Silicon on insulator
chemistry.chemical_element
Drain-induced barrier lowering
02 engineering and technology
01 natural sciences
Capacitance
0103 physical sciences
Electrical and Electronic Engineering
010302 applied physics
Subthreshold conduction
business.industry
021001 nanoscience & nanotechnology
Ferroelectricity
Electronic, Optical and Magnetic Materials
chemistry
Optoelectronics
Field-effect transistor
lcsh:Electrical engineering. Electronics. Nuclear engineering
0210 nano-technology
business
negative differential resistance
lcsh:TK1-9971
Biotechnology
Ferroelectric
Subjects
Details
- Language :
- English
- ISSN :
- 21686734
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of the Electron Devices Society
- Accession number :
- edsair.doi.dedup.....8003e310c78d3208cac7654f7280a3f5