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Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
- Source :
- IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (
Details
- Language :
- English
- ISSN :
- 21686734
- Volume :
- 6
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Journal of the Electron Devices Society
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.542e8768d7ce43eeb099863d27bfde87
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JEDS.2018.2863283