42 results on '"Ronsheim, Paul"'
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2. Imaging of Arsenic Cottrell Atmospheres around Silicon Defects by Three-Dimensional Atom Probe Tomography
3. Central Prolactin Infusions Stimulate Maternal Behavior in Steroid-Treated, Nulliparous Female Rats
4. Atom-Probe Tomography of Semiconductor Materials and Device Structures
5. Threshold voltage control in NiSi-gated MOSFETs through SIIS
6. Threshold voltage roll-up/roll-off characteristic control in sub-0.2-mu m single workfunction gate CMOS for high-performance DRAM applications
7. Transient Enhanced Diffusion and Dose Loss of Indium in Silicon
8. Evidence of Altered Brain Sexual Differentiation in Mice Exposed Perinatally to Low, Environmentally Relevant Levels of Bisphenol A
9. Guinea Pig GnRH: Localization and Physiological Activity Reveal That It, Not Mammalian GnRH, Is the Major Neuroendocrine Form in Guinea Pigs
10. Electron Holography as Characterization Tool for 2-D Analysis of p-n Junctions
11. Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs
12. Diffusion and Defect Structure in Nitrogen Implanted Silicon
13. Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion
14. Microstructural effects of emitter size on polysilicon-emitter bipolar transistors.
15. Characterization of polycrystalline silicon–single-crystal silicon interfaces and correlation to bipolar transistor device data.
16. Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1−Bi /GaAs superlattice
17. Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques
18. Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
19. Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission
20. Suppression of boron diffusion in deep submicron devices
21. SIMS quantification of SiGe composition with low‐energy ion beams
22. Investigation of an on product high-k/metal metrology methodology using an in-line, high throughput XPS measurement technique
23. Analysis of Nickel Silicides by SIMS and LEAP
24. Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem
25. An Overview of 300 mm SOI Starting Wafer Quality and Its Yield Detractors
26. Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.
27. Nitrogen-induced transient enhanced diffusion of dopants
28. Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion.
29. Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion
30. Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
31. A Subgroup of LHRH Neurons in Guinea Pigs with Progestin Receptors Is Centrally Positioned within the Total Population of LHRH Neurons
32. The Dependence of ETCH Pit Density on the Interfacial Oxygen Levels in Thin Silicon Layers Grown by Ultra High Vacuum Chemical Vapor Deposition
33. Ultra-Low Emissivity Alpha-Particle Detection.
34. Prolactin (PRL) Regulation of Maternal Behavior in Rats: Bromocriptine Treatment Delays and PRL Promotes the Rapid Onset of Behavior*
35. Threshold Voltage Roll-Up/Roll-Off Characteristic Control in Sub-0.2-µ m Single Workfunction Gate CMOS for High-Performance DRAM Applications.
36. Immunoreactive Beta-Endorphin Concentrations in Brain and Plasma during Pregnancy in Rats: Possible Modulation by Progesterone and Estradiol.
37. Light Intensity and the Control of Melatonin Secretion in Rats.
38. Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs
39. Electron Holography as Characterization Tool for 2-D Analysis of p-n Junctions
40. Long-term effects of parity on opioid and nonopioid behavioral and endocrine responses
41. A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology.
42. The Dependence of ETCH Pit Density on the Interfacial Oxygen Levels in Thin Silicon Layers Grown by Ultra High Vacuum Chemical Vapor Deposition.
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