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Threshold voltage roll-up/roll-off characteristic control in sub-0.2-mu m single workfunction gate CMOS for high-performance DRAM applications

Authors :
Satoshi Inaba
Ryota Katsumata
Akatsu, Hiroyuki
Rengarajan, Rajesh
Ronsheim, Paul
Murthy, Cheruvu S.
Kazumasa Sunouchi
Bronner, Gary B.
Source :
IEEE Transactions on Electron Devices. Feb, 2002, Vol. 49 Issue 2, p308, 6 p.
Publication Year :
2002

Abstract

The threshold voltage roll-up/roll-off characteristic control in sub-0.2-mu m single workfunction gate CMOS has been successfully achieved for high performance DRAM applications by N2 implant and well RTA optimization. It has been found that source/drain (S/D) RTA just after extension implant should be carefully and independently optimized in nFET and pFET to reduce transient enhanced diffusion (TED) during following thermal proces

Details

Language :
English
ISSN :
00189383
Volume :
49
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.122490230