Threshold voltage roll-up/roll-off characteristic control in sub-0.2-mu m single workfunction gate CMOS for high-performance DRAM applications

The threshold voltage roll-up/roll-off characteristic control in sub-0.2-mu m single workfunction gate CMOS has been successfully achieved for high performance DRAM applications by N2 implant and well RTA optimization. It has been found that source/drain (S/D) RTA just after extension implant should be carefully and independently optimized in nFET and pFET to reduce transient enhanced diffusion (TED) during following thermal proces