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1. Low-energy collisions between electrons and BeH$^+$: cross sections and rate coefficients for all the vibrational states of the ion

3. C-Reactive Protein Levels and the Risk of Incident Cardiovascular and Cerebrovascular Events in Patients with Obstructive Sleep Apnea

7. Advances in the MQDT approach of electron/molecular cation reactive collisions: High precision extensive calculations for applications

15. Low-energy collisions between electrons and BeH+: Cross sections and rate coefficients for all the vibrational states of the ion

18. Advances in the MQDT approach of electron/molecular cation reactive collisions: High precision extensive calculations for applications

19. Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates.

20. Mise en évidence des problèmes d’interfaces générés par la séparation du lien IHE-délivrance

24. Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

29. Small signal measurement of Sc2O3 AlGaN/GaN moshemts

30. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

32. Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

33. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

34. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors

36. POSSIBLE ORAL TRANSMISSION OF ACUTE CHAGAS'DISEASE IN BRAZIL.

37. Immunohistochemical Detection of Toxocaral Antigens in Human Liver Biopsies.

38. Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 °C.

39. High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition.

40. Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSi[sub x]- or W-based metallization.

41. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc[sub 2]O[sub 3] as the gate oxide and surface passivation.

42. Immunoglobulin A antibodies to Trypanosoma cruzi antigens in digestive forms of Chagas' disease

46. Field-plated 0.25 μm gate-length AIGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18GHz.

49. Small signal measurement of Sc2O3 AlGaN/GaN moshemts

50. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

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