Small signal measurement of Sc2O3 AlGaN/GaN moshemts

The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum <f>fT</f> of ∼11 GHz and <f>fMAX</f> of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain–source resistance, transfer time and gate–drain and gate–source capacitance as a function of gate voltage. The transfer time is in the order 0.5–1 ps and decreases with increasing gate voltage. [Copyright &y& Elsevier]