Search

The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very popular in view of their applications as electronic and optoelectronic components. AlGaN-based deep UV emitters are gaining visibility due to their disinfection capabilities. Likewise, high electron mobility transistors are attracting increasing attention owing to their superior electron transport which yields high-speed and high-power applications. These devices are conventionally made of AlGaN/GaN heterostructures grown on foreign substrates. However, structural defects, including stress induced by a mismatch in unit cell parameters and the presence of dislocations, can not only decrease the efficiency of the light emitters (by facilitating the non-radiative recombination of electron–hole pairs), but also impede electron mobility within the two-dimensional electron gas at the AlGaN/GaN interface. Therefore, the significance of obtaining high-quality AlGaN layers becomes evident. Including a thin AlN interlayer between the GaN buffer layer and AlGaN is a possible answer to address these drawbacks. Not only do we show that a thin AlN layer, approximately ≤3 nm in thickness, between the GaN buffer and AlGaN layers, is effective in decreasing the dislocation densities in the AlGaN layer by around 30%, but also this is responsible for an increase in the electron mobility (approximately 33%) compared to a classical AlGaN/GaN heterostructure. Additionally, the resulting heterostructure exhibits better optical quality, with a 7-fold increase in intensity as well as a 20% reduction in full-width at half-maximum in the AlGaN emission. [ABSTRACT FROM AUTHOR]

We present narrow-band polarization-sensitive reflectance of GaN/AlGaN heterostructures in the mid-infrared range. Experimental measurements performed at 15° angle of incidence show the excitation of a Berreman mode at the interface between GaN and sapphire substrate. A transfer matrix method for anisotropic layers has been used to analyze the obtained results. The contribution of the two-dimensional electron gas at the interfaces of the heterostructures has been included by proper modelization of an effective thin layer.

In this contribution we will discuss the experimental application of 3D chiral metamaterials as high sensitivity biosensors, exploiting circular dichroism in transmission. 3D metamaterials with chiral features can be realized by highly accurate and highly localized bottom-up nanofabrication approach. Large chiroptical effects can be engineered, originating from the single element optical resonances, but collective interactions in arrayed configurations can play a significant role, further enhancing these effects. Capability of biomarker detection in the femtomolar range is demonstrated even in complex biofluid matrix.

Distinguishing between different handedness of circularly polarized light can be a useful additional property in photodetector technology. The integration of this functionality can be obtained either using optical media with chiro‐optical response, or by the employment of chiral metamaterials. In this work, 3D chiral metasurfaces composed by a 3D helix array, are integrated onto a micrometer‐scale silicon‐based transistor and act as optical filter for circularly polarized light. The technological process involving focused electron beam induced deposition for helix manufacturing is carefully studied with respect to its effect on the phototransistor response. The integrated system exhibits a photoresponse which is dependent on the circular polarization, with a promising asymmetry factor in the visible spectral range. The proposed technology can pave the way for novel potential applications in diverse areas such as materials science, bioimaging, and quantum computing. [ABSTRACT FROM AUTHOR]

Chiral lattice modes are hybrid states arising from the chiral plasmonic particles assembled in ordered arrays with opportune periodicity. These resonances exhibit dependence on excitation handedness, and their observation in plasmonic lattices is strictly related to the chiroptical features of the fundamental plasmonic unit. Here, the emergence of chiral surface lattice resonances (c‐SLRs) is shown in properly engineered arrays of nanohelices (NHs), fully three dimensional (3D) chiral nano‐objects fabricated by focused ion beam processing. By tuning the relative weight of plasmonic and photonic components in the hybrid mode, the physical mechanism of strong diffractive coupling leading to the emergence of the lattice modes is analyzed, opening the way to the engineering of chiral plasmonic systems for sensing applications. In particular, a coupling regime is identified where the combination of a large intrinsic circular dichroism (CD) of the plasmonic resonance with a well‐defined balance between the photonic quality factor (Q factor) and the plasmonic field enhancement (M) maximizes the capability of the system to discriminate refractive index (RI) changes in the surrounding medium. The results lay the foundation for exploiting CD in plasmonic lattices to high performance refractometric sensing. [ABSTRACT FROM AUTHOR]

In this research work, we present a study on time-sequenced plasma-enhanced atomic layer deposition (PE-ALD) processes towards the achievement of high-quality α-MoO3 thin films which are suitable for exfoliation. In particular, a conventional precursor injection method along with a boosted precursor delivery approach are discussed and analysed. In the latter, the proposed gas supply mechanism ensures a large number of deposited Mo atoms per unit of time, which, along with a proper thermal energy, leads to high-quality and oriented orthorhombic α-MoO3 films. The proposed boosted approach is also compared with post growth annealing steps, resulting in more effective achievement of a highly oriented orthorhombic α-MoO3 phase and less time consumption. [ABSTRACT FROM AUTHOR]

AbstractWe have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

A detailed study of the electrical properties of planar AlGaN/GaN Schottky diodes is presented, the focus being on the role of the two dimensional electron gas (2DEG) depletion and the diodes non-idealities in different voltage regimes. The 2DEG depletion behavior is inferred from the analysis of capacitance and current measurements with transition from vertical to lateral diode operation occurring at Vpinch-off=4V. In particular, the sub-micrometer depletion width, laterally extending from the edge of the Schottky contact under high reverse voltages, is evaluated on the basis of a simple fringe capacitance model. Current transport mechanisms are discussed, investigating the interrelation between 2DEG, Poole-Frenkel effect, and defects. With regard to defects, the role of dislocations in the AlGaN/GaN diode non-idealities, usually interpreted in terms of Schottky barrier inhomogeneities, is critically addressed. Photocurrent spatial mapping under high reverse voltage points out the not uniform electric field distribution around the Schottky contact and highlights the presence of local photo-conductive paths, likely associated with the dislocations near the edge of the Schottky contact. [ABSTRACT FROM AUTHOR]

Fine control of the chiral light–matter interaction at the nanoscale, by exploiting designed metamaterial architecture, represents a cutting‐edge craft in the field of biosensing, quantum, and classic nanophotonics. Recently, artificially engineered 3D nanohelices demonstrate programmable wide chiroptical properties by tuning materials and architecture, but fundamental diffractive aspects that are at the origin of chiral resonances still remain elusive. Here, a novel concept of a 3D chiral metacrystal, where the chiroptical properties are finely tuned by in‐plane and out‐of‐plane diffractive coupling, is proposed. Different chiral dipolar modes can be excited along the helix arms, generating far field optical resonances and radiation pattern with in‐plane side lobes, and suggesting that a combination of efficient dipole excitation and diffractive coupling matching controls the collective oscillations among the neighbor helices. The proposed concept of compact chiral metacrystal can be suitable for integration with quantum emitters and open perspectives in novel schemes of enantiomeric detection. [ABSTRACT FROM AUTHOR]

Aluminum bowtie nanoantennas represent a possibility to confine and enhance electromagnetic (EM) field at optical frequencies in subwavelength regions by using an abundant and inexpensive metal. The native oxidation process of this metal is often viewed as a limitation for its application in plasmonics. Here, we show that in close gap configurations, the high refractive index of the native aluminum oxide helps in squeezing the plasmonic mode in extremely reduced size volumes, providing a higher EM near-field confinement and enhancement in the bowtie antenna gaps than achieved in the pure aluminum counterpart. Hence, the study provides new perspectives in the use of such a plasmonic antenna geometry within this aluminum system, which can be useful for improving plasmonics-enabled effects such as surface-enhanced Raman scattering- and light–matter interaction in strong coupling regime. [ABSTRACT FROM AUTHOR]