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The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
- Source :
- Nanoscale Research Letters, Vol 2, Iss 10, Pp 509-511 (2007)
- Publication Year :
- 2007
- Publisher :
- SpringerOpen, 2007.
-
Abstract
- AbstractWe have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.
Details
- Language :
- English
- ISSN :
- 19317573 and 1556276X
- Volume :
- 2
- Issue :
- 10
- Database :
- Directory of Open Access Journals
- Journal :
- Nanoscale Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b03035ff3ca04ebbb9bc7aa215fe8b15
- Document Type :
- article
- Full Text :
- https://doi.org/10.1007/s11671-007-9092-2