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Your search keyword '"Mishra, Madhuri"' showing total 65 results
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65 results on '"Mishra, Madhuri"'

10. Investigation of Highly Efficient Dual-Band Photodetector Performance of Spin-on-Doping (SOD) Grown p-Type Phosphorus Doped ZnO (P:ZnO)/n-Ga2O3 Heterojunction Device

Author

Mishra, Madhuri, Saha, Rajib, Saha, Archishman, Dalal, Avijit, Sengupta, Ankita, Mondal, Aniruddha, Chattopadhyay, Sanatan, and Chakrabarti, Subhananda

Abstract

We developed a stable and reproducible p-type P:ZnO thin film using a cost-effective solution-derived spin-on-doping (SOD) technique. We created a pure p-n heterojunction by depositing a highly transparent Ga2O3 thin film on P:ZnO for photodetector applications. The films’ surface morphology and thickness were analyzed using AFM and FEGSEM. At the same time, UV-visible (UV–Vis) and PL spectroscopy were employed to investigate their optical properties, including absorption, energy bandgap, and defect-related carrier transitions. The resulting P:ZnO/Ga2O3 heterojunction demonstrated excellent photo-response performance, with a responsivity of 4.76 A/W, detectivity of $10.13\times 10^{{12}}$ Jones, and rapid response speed. The device exhibited sensitivity to UV-C and UV–Vis wavelength regions, showcasing its potential for high-performance, dual-band, and low-power photodetectors.

Published
2024
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23. Impact of deposition temperature on crystalline quality, oxygen vacancy, defect modulations and hetero-interfacial properties of RF sputtered deposited Ga2O3 thin films on Si substrate.

Author

Saha, Rajib, Bhowmick, Sangita, Mishra, Madhuri, Sengupta, Ankita, Chattopadhyay, Sanatan, and Chakrabarti, Subhananda

Subjects
THIN films, RADIOFREQUENCY sputtering, OPTOELECTRONIC devices, IMAGING systems in chemistry, X-ray photoelectron spectroscopy, CHEMICAL properties, ATOMIC force microscopy, RADIO frequency
Abstract

In the current work, thin film (∼55 nm) of n-type Ga2O3 (n-Ga2O3) is deposited on silicon (p-Si) substrate by using radio-frequency (RF) sputtering technique with systematic substrate temperature variations (room temperature to 700 °C). The structural, optical properties and chemical states of elements of the deposited films are observed to depend significantly on the deposition temperatures. The chemical composition and oxidation states, optical properties, defect states and structural quality of the deposited films are investigated in detail by employing x-ray photoelectron spectroscopy, energy dispersive x-ray, spectroscopic ellipsometry, Raman, photoluminescence and atomic force microscopy images. X-ray diffraction result reveals a polycrystalline nature of monoclinic β -phase of Ga2O3 with (403) dominant plane. The work functions are calculated from the ultraviolet photo-electron spectroscopy for all the deposited films and Ga2O3/Si heterojunction properties are investigated by using currentâ€"voltage (I â€" V) and capacitanceâ€"voltage (C â€" V) measurements. Among all the fabricated heterojunctions, 600 °C deposited Ga2O3 film exhibits superior performance in terms of energy bandgap, work function, refractive index, barrier height, rectification ratio and effective carrier concentrations. The current transport mechanism is analysed using the appropriate energy band diagram of Ga2O3 and Si. Therefore, the study suggests that 600 °C deposition temperatures is the optimum temperature for developing a high quality Ga2O3 thin film on Si by using RF sputtering technique and corresponding Ga2O3 thin film/Si heterojunction can be a potential candidate for developing several electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2022
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