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372 results on '"Messier, R."'

1. 640 Cystic fibrosis transition program (CF RISE) translated to Turkish (KF SOBE): first annual results

Author

Gokdemir, Y., primary, Selçuk, M., additional, Eralp, E. Erdem, additional, Ergenekon, A., additional, Yegit, C. Yilmaz, additional, Yanaz, M. Cenk, additional, Guliyeva, A., additional, Kalyoncu, M., additional, Karabulut, S., additional, Uzunoglu, B., additional, Tastan, G., additional, Kocamaz, D., additional, Cakar, N. Metin, additional, Kenis-Coskun, O., additional, Gorgun, I., additional, Messier, R., additional, Merz, P., additional, Karakoc, F., additional, and Karadag, B., additional

Published
2023
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2. P223 Transition programme as a quality improvement project: adaptation of the R.I.S.E. in a centre with limited resources – Marmara University experience

Author

Gokdemir, Y., primary, Selcuk, M., additional, Eralp, E. Erdem, additional, Ergenekon, A.P., additional, Yanaz, M. Cenk, additional, Yegit, C. Yılmaz, additional, Gulieva, A., additional, Kalyoncu, M., additional, Karabulut, S., additional, Uzunoglu, B., additional, Tastan, G., additional, Kocamaz, D., additional, Coskun, O. Kenis, additional, Gorgun, I., additional, Messier, R., additional, Mertz, P., additional, Karakoc, F., additional, and Karadag, B., additional

Published
2023
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3. 86 Identifying Knowledge Gaps Using Adapted CF R.I.S.E in a Low Resource Setting

Author

Gökdemir, Y., primary, Selcuk, M., additional, Erdem Eralp, E., additional, Ergenekon, A., additional, Yeğit, C. Yılmaz, additional, Cenk, M., additional, Gulieva, A., additional, Kalyoncu, M., additional, Karabulut, S., additional, Uzunoglu, B., additional, Taştan, G., additional, Kocamaz, D., additional, Kenis-Coskun, O., additional, Gorgun, I., additional, Karakoç, F., additional, Messier, R., additional, Mertz, P., additional, and Karadağ, B., additional

Published
2022
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17. Real time spectroellipsometry for optimization of diamond film growth by microwave plasma-enhanced chemical vapor deposition from CO/H2 mixtures

Author

Lee, Joungchel, Hong, Byungyou, Messier, R., and Collins, R.W.

Subjects
Diamond films -- Research, Chemical vapor deposition -- Research, Physics
Abstract

The deposition rate and thickness evolution of the nondiamond (sp2-bonded) carbon volume fraction in very thin, but fully coalesced, nanocrystalline diamond films produced on Si substrates by microwave plasma-enhanced chemical vapor deposition from gas mixtures of CO and H2, were determined by real time spectroellipsometry. A broad subsidiary minimum in the sp2 C content was found, centered near a CO/H2 ratio of 2, corresponding to the C-H-O diamond-growth phase-diagram coordinate of about 0.5. Under these gas flow conditions, the deposition rate is a complicated function of temperature, having a peak near 550 degrees C.

Published
1996

25. Real time spectroscopic ellipsometry characterization of the nucleation of diamond by filament-assisted chemical vapor deposition

Author

Collins, R.W., Yue Cong, Nguyen, H.V., An, Ilsin, Vedam, K., Badzian, T., and Messier, R.

Subjects
Nucleation -- Research, Diamonds -- Research, Ellipsometry -- Research, Physics
Abstract

Real time spectroscopic ellipsometry (SE) was used to characterize diamond nucleation by filament assisted chemical vapor deposition. The use of SEin turn led to improved control over interface contamination, substrate temperature and nuclei induction time. In addition, SE monitors interface structure and mass thickness evolution associated with the discontinuous particle film. The results show the effectivity of the use of ellipsometric methods for thin film nucleation characterization.

Published
1992

31. Role of heat transfer and fluid flow in the chemical vapor deposition of diamond.

Author

DebRoy, T., Tankala, K., Yarbrough, W. A., and Messier, R.

Subjects
DIAMONDS, THIN films, CHEMICAL vapor deposition, FLUID dynamics, HEAT transfer
Abstract

Presents a study that investigated the role of fluid flow and heat transfer in the chemical vapor deposition of diamond films. Methodology; Effect of fluid flow and heat transfer on the quality of the diamond films; Influence of fluid flow and heat transfer on the rate of chemical vapor deposition.

Published
1990
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32. Effects of noble gases on diamond deposition from methane-hydrogen microwave plasmas.

Author

Zhu, W., Inspektor, A., Badzian, A. R., McKenna, T., and Messier, R.

Subjects
NOBLE gases, MICROWAVE plasmas, DIAMONDS
Abstract

Presents a study that examined the effects of noble gases on diamond deposition from methane-hydrogen microwave plasmas. Background on diamond thin films; Assessment of the influence of the degree of excitation of reactant molecules; Results and discussion.

Published
1990
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37. The barrier height of Schottky diodes with a chemical-vapor-deposited diamond base.

Author

Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. Sh., Badzian, A. R., Badzian, T., and Messier, R.

Subjects
SCHOTTKY barrier diodes, ALUMINUM, GOLD, CHEMICAL vapor deposition, PHOTOEMISSION
Abstract

Presents a study that measured the barrier height of Schottky diodes for aluminum and gold rectifying contacts to p-type chemical-vapor-deposited diamond thin films using the internal photoemission technique. Significance of the electrical properties of semiconductor diamond; Deposition of the diamond films on single-crystal silicon as well as on fused silica substrates for film characterization; Confirmation of the diamond structure of the films.

Published
1989
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41. Improved Seal for NTF Fan Shaft

Author

Crossley, E. A., Jr, Jones, J. A, Messier, R, Johnson, G. W, and Felton, K

Subjects
Machinery
Abstract

New seal more effective and lasts longer. Seal consists of five felt rings interspersed with four polytetrafluoroethylene rings having inner diameter slightly larger than shaft. Spaces between polytetrafluoroethylene rings and shaft produce labyrinth effect, which increases degree of sealing.

Published
1986

46. Diamond and Related Materials: International Journal on the Science and Technology of Diamond and Related Materials, Volume 6, No. 10, August 1997.

Author

ELSEVIER SCIENCE PUBLISHERS LTD BARKING(UNITED KINGDOM), Messier, R., Angus, J. C., Anthony, T. R., Bachmann, P. K., Bonnot, A. M., ELSEVIER SCIENCE PUBLISHERS LTD BARKING(UNITED KINGDOM), Messier, R., Angus, J. C., Anthony, T. R., Bachmann, P. K., and Bonnot, A. M.

Abstract

The first European Conference on Silicon Carbide and Related Materials (ECSCRM 96) was held in Heraklion, Crete, Greece from October 6 to October 9, 1996. This was the first event of a series of biannual conferences addressing wide band gap semiconductors research field and supported by the European Union through the "Euroconferences" action. The next conference will be held in Montpellier, France in 1998. The conference was attended by 140 scientists from 13 countries representing most of the European research groups active in the subject. Thirteen invited talks, 18 oral and 61 poster contributions were presented in 8 oral and 2 poster sessions. These 92 contributions demonstrated the rapid development of wide band gap semiconductor research. Moreover, two panel discussions on European effort on SiC wafer production & SiC bulk and epitaxial growth apparatus and on SiC-based devices and applications were organized. Two main research areas were covered by the majority of presentations namely the SiC material aspect and the device-oriented aspect as well as balancing academic and industrial participation. The topics covered by the oral sessions were: 1. SiC bulk growth. 2, SiC epitaxial growth. 3. SiC characterization: Crystal structure & defects; Optical and electrical properties. 4. SiC processing: Oxidation, metallization, ion implantation and etching. 5. SiC-based devices and applications. 6. Nitrides growth and characterization. 7. Amorphous SiC and other SiC-related materials. The above topical structure is followed in this volume. The contributions were reviewed according to the "Diamond & Related Materials" Journal refereeing procedure and 75 manuscripts were accepted and published in this volume.

Published
1997

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