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κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm. [ABSTRACT FROM AUTHOR]

Site- and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on a single nanorod demonstrates that the emission at 3.0 eV stems from the polarization-free m-plane, which is supported by a fast recombination lifetime of ∼490 ps at low temperatures. Quasi-resonant laser excitation demonstrates predominant radiative recombination at low excitation densities, whereas at high excitation densities, the efficiency is lowered by Auger recombination and/or carrier leakage. [ABSTRACT FROM AUTHOR]

This document is a collection of research papers on wide- and ultrawide-bandgap electronic semiconductor devices. It focuses on the progress and challenges in developing devices made from wide-bandgap materials like GaN, AlGaN, AlN, Ga2O3, BN, and diamond for power, rf, and photonic applications. The papers cover topics such as improving GaN power devices, exploring new wide bandgap materials, and investigating gate insulator properties. Additionally, there are papers on defect detection, new concepts for wide bandgap devices, and the growth and properties of different materials. The research provides valuable insights for researchers interested in using these materials in electronic devices. [Extracted from the article]

Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band. We observe a short radiative lifetime of 340 ps, arising from a Purcell factor of 5, owing to integration of the QD within a low-mode-volume photonic crystal cavity. Through in-situ control of the sample temperature, we show both temperature tuning of the QD's emission wavelength and a preserved single photon emission purity at temperatures up to 25K. These findings suggest the viability of QD-based, cryogen-free C-band single photon sources, supporting applicability in quantum communication technologies. [ABSTRACT FROM AUTHOR]

This Letter reports a highly scaled 90 nm gate length β-Ga2O3 (Ga2O3) T-gate MOSFET with a power gain cutoff frequency (fMAX) of 55 GHz. The 60 nm thin epitaxial Ga2O3 channel layer was grown by molecular beam epitaxy, while the highly doped (n++) source/drain regions were regrown using metal organic chemical vapor deposition. Maximum on current (IDS,MAX) of 160 mA/mm and trans-conductance (gm) around 36 mS/mm were measured at VDS = 10 V for LSD = 1.5 μ m device. Transconductance and on current are limited by high channel sheet resistance (Rsheet). Gate/drain breakdown voltage of 125 V was measured for LGD = 1.2 μ m. We extracted 27 GHz current gain cutoff frequency (fT) and 55 GHz fMAX for 20 V drain bias for unpassivated devices. While no current collapse was seen initially for both drain and gate lag measurements for 500 ns pulse, moderate current collapse was observed after DC, RF measurements caused by electrical stressing. We calculated a high fT. VBR product of 3.375 THz V, which is comparable to the state-of-the-art GaN HEMTs. This figure of merit suggests that Ga2O3 could be a potential candidate for X-band application. [ABSTRACT FROM AUTHOR]

The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is measured. The contrast and the principal axis of the emission diagrams for 2 nm‐thick (Al,Ga)N QWs grown for aluminum compositions between 40% and 90% are studied. The light is emitted on the edge of the QWs at wavelengths going from 280 nm down to 209 nm. The emission diagram, a change from oblate to prolate with respect to the in‐plane orientation, for an aluminum composition is found to occur around 72%, that is, at an emission wavelength of about 235 nm. The orientations and shapes of the edge‐emission diagrams indicate that the fluctuations of the composition of the (Al,Ga)N confining layer are deep enough for producing intravalence band mixings. This property, that acts in concert with the built‐in strain and quantum‐confined Stark effect, contributes to the anisotropy of the light emission when the aluminum composition reaches 60–70%, that is, for an emission wavelength of 260–235 nm. [ABSTRACT FROM AUTHOR]

In situ transmission electron microscopy (TEM) observations of the metal–organic vapor phase epitaxy (MOVPE) growth promise to enhance the understanding of this complex process. However, a new experimental approach is required, capable of live imaging at the atomic scale and simultaneously reflecting this method's elevated pressures. To this end, a closed gas cell in situ TEM setup is used as a micrometer‐scaled MOVPE reactor to grow GaP using tertiary butyl phosphine (TBP) and trimethyl gallium (TMGa). To prove the MOVPE reactor ability of the in situ TEM holder, the thermal decomposition of TBP and TMGa is shown to proceed similarly to conventional reactor setups. Decomposition temperatures align with susceptor temperatures in MOVPE machines. Formed products and their temperature decomposition curves are comparable to previous investigations performed in conventional reactors, even though the setups significantly differ. The obtained results are exploited to grow GaP nanostructures via the MOVPE growth process inside the TEM. To prepare a substrate surface for GaP growth, which is highly challenging, Au‐catalyzed vapor‐liquid‐solid‐grown GaP nanowires are grown in the reactor cell. Subsequently, the nanowire's sidewalls serve as MOVPE substrates. These results lay the foundation for crystal growth observation under MOVPE conditions in a TEM. [ABSTRACT FROM AUTHOR]

Direct InN growth is demonstrated and characterized on a sapphire (Al2O3) substrate by plasma‐enhanced metal–organic chemical vapor deposition using high‐density nitrogen (N2) microstrip‐line microwave plasma. N2 plasma irradiation at 650 °C for 20 min forms AlN on Al2O3 substrate. No peak regarding metallic In droplets is detected from InN/Al2O3 regardless of N2 plasma irradiation. InN is found to be rotated 30° with their a‐axis oriented to become [101¯0]$[ {10\bar{1}0} ]$ InN // [112¯0]$[ {11\bar{2}0} ]$ Al2O3. The transition layers are confirmed at the InN/Al2O3 interface regardless of N2 plasma irradiation. The surface of InN consisted of large undulations with root mean square values >30 nm, suggesting that strain relaxation introduces misfit dislocations. [ABSTRACT FROM AUTHOR]

We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa's potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa's suitability for achieving high growth rates in Ga2O3 epilayers for vertical power electronic devices. [ABSTRACT FROM AUTHOR]

We investigate experimentally and theoretically the impact of valence band mixing and spectrum of confined states on the polarization of light emitted from or absorbed by GaAs/AlGaAs semiconductor quantum dots and quantum wires with tailored heterostructure potential. In particular, such nanostructures with parabolic-profile confinement potentials, realized by organometallic vapor phase epitaxy inside pyramidal pits, served as model systems for the study. Different degrees of linear polarization (DOLP) of emitted light, depending on the confinement potential profile, the specific excitonic transition, and the level of excitation, are observed. A theoretical model shows that, besides the impact of valence band mixing, the overlap of conduction and valence band wavefunctions as well as state occupation probability and broadening of transitions determine the DOLP. The conclusions are useful for the design of quantum light emitters with controlled polarization properties. [ABSTRACT FROM AUTHOR]

The cooling requirement for long-wave infrared detectors still creates significant limitations to their functionality. The phenomenon of minority-carrier exclusion and extraction in narrow-gap semiconductors has been intensively studied for over three decades and used to increase the operating temperatures of devices. Decreasing free carrier concentrations below equilibrium values by a stationary non-equilibrium depletion of the device absorber leads to a suppression of Auger generation. In this paper, we focus on analyzing exclusion and extraction effects separately, based on experimental and theoretical results for a HgCdTe photodiode. To carry out an experiment, the n+-P+-π-N+ heterostructure was grown by metal organic chemical vapor deposition on CdTe-buffered GaAs substrate. In order to separate the extraction and exclusive junctions, three different devices were evaluated: (1) a detector etched through the entire n+-P+-π-N+ heterostructure, (2) a detector made of the P+-π photoconductive junction and (3) a detector made of the π-N+ photodiode junction. For each device, the dark current density–voltage characteristics were measured at a high-temperature range, from 195 K to 300 K. Next, the carrier concentration distribution across the entire heterostructure and individual junctions was calculated using the APSYS simulation program. It was shown that when the n+-P+-π-N+ photodiode is reverse biased, the electron concentration in the π absorber drops below its thermal equilibrium value, due to the exclusion effect at the P+-π junction and the extraction effect at the π-N+ junction. To maintain the charge neutrality, the hole concentration is also reduced below the equilibrium value and reaches the absorber doping level (NA), leading to the Auger generation rate's reduction by a factor of 2ni/NA, where ni is the intrinsic carrier concentration. Our experiment conducted for three separate detectors showed that the exclusion P+-π photoconductive junction has the most significant effect on the Auger suppression—the majority of the hole concentration drops to the doping level not only at the P+-π interface but also deep inside the π absorber. [ABSTRACT FROM AUTHOR]

This document is a compilation of articles and reviews focused on III-nitride materials, their properties, growth, and applications. The articles cover a range of topics including the optimization of light extraction efficiency in deep-ultraviolet LEDs, the growth and optical properties of InGaN/GaN quantum wells, the investigation of GaN/MoS2 heterostructures, the physical and electrical properties of vertical GaN Schottky diodes, and the fabrication of p-GaN gate HEMTs. Other topics include carrier energy and potential height in GaAs/InGaAs MQW structures, the growth of aluminum nitride thin films, crack-free AlGaN/AlN/GaN HEMT structures, carbon-doped semi-insulating N-polar GaN, and the influence of wet treatment on red microLEDs. The reviews discuss enhanced GaN HEMTs and the growth conditions and external quantum efficiency of InGaN LEDs. The document provides valuable insights into the research and development of III-nitride materials and their applications. [Extracted from the article]

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar 10 1 ¯ 1 -plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices. [ABSTRACT FROM AUTHOR]

This document provides a calendar of events for May, June, July, and August 2024. The events listed include conferences, workshops, symposiums, and fairs related to various topics such as metal and metallurgy, corrosion protection, nuclear security, non-destructive testing, and materials science. The events are taking place in different countries around the world, including China, Qatar, Germany, Belgium, Austria, Portugal, USA, South Korea, Turkey, Italy, Bulgaria, and Canada. These conferences offer opportunities for researchers and professionals to exchange knowledge and discuss advancements in their respective fields. [Extracted from the article]

A significant part of the present and future of optoelectronic devices lies on thin multilayer heterostructures. Their optical properties depend strongly on strain, being essential to the knowledge of the stress level to optimize the growth process. Here the structural and microstructural characteristics of sub‐micron a‐ZnO epilayers (12 to 770 nm) grown on r‐sapphire by metal–organic chemical vapour deposition are studied. Morphological and structural studies have been made using scanning electron microscopy and high‐resolution X‐ray diffraction. Plastic unit‐cell distortion and corresponding strain have been determined as a function of film thickness. A critical thickness has been observed as separating the non‐elastic/elastic states with an experimental value of 150–200 nm. This behaviour has been confirmed from ultraviolet photoelectron spectroscopy, X‐ray photoelectron spectroscopy and high‐resolution transmission electron microscopy measurements. An equation that gives the balance of strains is proposed as an interesting method to experimentally determine this critical thickness. It is concluded that in the thinnest films an elongation of the Zn—O bond takes place and that the plastic strained ZnO films relax through nucleation of misfit dislocations, which is a consequence of three‐dimensional surface morphology. [ABSTRACT FROM AUTHOR]

A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices. [ABSTRACT FROM AUTHOR]

The CuCr mixed oxides catalysts supported on ZSM-5 zeolite (CuCr/ZSM-5) were synthesized via metal organic chemical vapour deposition (MOCVD) method for catalytic oxidation of trichloroethylene (TCE). SEM, XRD, BET, H2-TPR, NH3-TPD and XPS were tested. The active components were dispersed uniformly over the surface of ZSM-5 zeolite. The catalytic experimental results exhibited that the CuCr/ZSM-5 exhibited the best catalytic performance for TCE oxidation with 90% of TCE at 338°C and the concentration of C2Cl4 decreased compared with Cu/ZSM-5 and Cr/ZSM-5. The possible reason is that CuCr/ZSM-5 has superior reducibility, higher Cu2+ surface concentration as well as more surface oxygen. [ABSTRACT FROM AUTHOR]

In this study, the effect of implementing island growth in an AlN/Al0.1Ga0.9N superlattice on the structural properties of vertical GaN‐on‐Si(111) PIN‐structures is investigated. It is demonstrated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) that islands are formed on‐top of V‐pits present in the AlN nucleation layer and that the island coalescence height can be controlled by the growth temperature. Defect selective etching analyses confirm a noteworthy reduction in the threading dislocation density (TDD), which diminishes from 1.2 × 109 cm−2 ± 7.5 × 107 cm−2 to 8.5 × 108 cm−2 ± 7.3 ×107 cm−2 as the island coalescence height increases from ≈160 nm to ≈450 nm, achieved by increasing the growth temperature. Cross‐sectional transmission electron microscopy (TEM) shows that island growth is particularly favorable for the reduction of a‐type dislocations. As a consequence of the significant reduction of a‐type dislocations in the buffer, stress relaxation during the GaN film growth is reduced, which is supported by in situ wafer curvature measurements and high‐resolution X‐ray diffraction (XRD). Owing to the optimized island growth conditions, thick and crack‐free GaN layers on Si(111) substrates are obtained with an absolute wafer bow of <50 μm. [ABSTRACT FROM AUTHOR]

High crystalline quality and flat a‐plane aluminum gallium nitride (AlGaN) films are obtained on Si‐doped AlN templates with a moderate silane (SiH4) flow rate by metal‐organic chemical vapor deposition (MOCVD). The effects of the SiH4 flow rate on the surface morphology, crystalline quality, stress state, and optical property of a‐plane AlN templates and AlGaN films are comprehensively investigated. As the SiH4 flow rate increases from 0 to 7.0 nmol min−1, the full width at half maximum of X‐ray rocking curve values along [0001]/[1–100] directions for the AlGaN films are monotonically reduced to 1124/1143 arcsec. Meanwhile, the surface root mean square roughness value is decreased to 0.88 nm. These achievements are attributed to the suppression of the anisotropy degrees and in‐plane stress of AlN templates. In addition, an excess SiH4 flow rate leads to deteriorated surface morphologies and increased basal plane stacking fault (BPSF) densities for both AlN and AlGaN films. This work suggests that doping AlN layers with an appropriate SiH4 flow rate is a promising route to obtain high‐quality a‐plane AlGaN films for efficient nonpolar deep ultraviolet (DUV) devices. [ABSTRACT FROM AUTHOR]

Inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub‐0.60 eV bandgaps grown on InP and GaAs are presented. Threading dislocation densities are 1.3 ± 0.6 × 106 and 8.9 ± 1.7 × 106 cm−2 on InP and GaAs, respectively. The devices generate open‐circuit voltages of 0.386 and 0.383 V, respectively, under irradiance producing a short‐circuit current density of ≈10 A cm−2, yielding bandgap‐voltage offsets of 0.20 and 0.21 V. Power and broadband reflectance measurements are used to estimate thermophotovoltaic (TPV) efficiency. The InP‐based cell is estimated to yield 1.09 W cm−2 at 1100 °C versus 0.92 W cm−2 for the GaAs‐based cell, with efficiencies of 16.8 versus 9.2%. The efficiencies of both devices are limited by sub‐bandgap absorption, with power weighted sub‐bandgap reflectances of 81% and 58%, respectively, the majority of which is assumed to occur in the graded buffers. The 1100 °C TPV efficiencies are estimated to increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0–2.3 µm atmospheric window. Peak laser power converter efficiencies of 36.8% and 32.5% are estimated under 2.0 µm irradiances of 1.86 and 2.81 W cm−2, respectively. [ABSTRACT FROM AUTHOR]

AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlxGa1−xN (x = 0.24, 0.34, 0.47) epilayers grown on c-plane patterned sapphire substrate with GaN template by the metal organic chemical vapor deposition (MOCVD). It is demonstrated that the increase of the aluminum content leads to the deterioration of the surface morphology and crystal quality of the AlGaN epitaxial layer. The dislocation densities of AlxGa1−xN epilayers were determined from symmetric and asymmetric planes of the ω-scan rocking curve and the minimum value is 1.01 × 109 cm−2. The (10 1 ¯ 5) plane reciprocal space mapping was employed to measure the in-plane strain of the AlxGa1−xN layers grown on GaN. The surface barrier heights of the AlxGa1−xN samples derived from XPS are 1.57, 1.65, and 1.75 eV, respectively. The results of the bandgap obtained by PL spectroscopy are in good accordance with those of XRD. The Hall mobility and sheet electron concentration of the samples are successfully determined by preparing simple indium sphere electrodes. [ABSTRACT FROM AUTHOR]

The document is a comprehensive list of upcoming conferences, workshops, and fairs related to materials science and engineering. These events cover a wide range of topics and are held in various countries around the world. They provide opportunities for researchers and professionals to share knowledge and discuss advancements in their respective fields. Some of the topics covered include thin film technologies, paint expo, tube technology, surfaces and coatings technologies, physics of reactors, thermal spray, metal and metallurgy exhibition, corrosion science, nuclear security, precision optics, additive manufacturing, corrosion, sustainable development, and electrochemistry. [Extracted from the article]

The document is a comprehensive list of upcoming conferences and events related to materials science, engineering, and technology. It includes conferences in various locations around the world, covering topics such as structural health monitoring, additive manufacturing, corrosion, and sustainable development. The document provides contact information and website links for each conference, allowing library patrons to access further information if desired. [Extracted from the article]

Based on metal organic chemical vapor deposition (MOCVD), growth mechanism and stress modulation of van der Waals (vdW) heteroepitaxial GaN microwave material were studied with few-layer BN as an interlayer on 4-inch sapphire substrates. The influence of AlN nucleate process on growth mechanism of GaN buffer layer and its correlation with crystalline quality, stress, and electrical properties were discussed. A stress modulation scheme based on AlN/ AlGaN composite nucleation process is proposed, achieving stress well in control for large-size vdW heteroepitaxy firstly. The as-grown GaN microwave material possesses a wafer bow of + 20. 4 μm, fullwidth at half maximum of GaN (002) / (102) peaks of 471. 6/933. 5 arcsec, root-mean-square roughness of 0. 52 nm and electron mobility of 2 000 cm² / (V·s). Finally, largesize wafe-scale GaN microwave material was successfully separated from sapphire substrate by a mechanical lift-off process, providing convenience for transfering to high thermal conductivity substrates and creating conditions for fabricating high-power RF devices. [ABSTRACT FROM AUTHOR]

Using gas-phase deposition (Physical Vapor Deposition (PVD) and Metal Organic Chemical Vapor Deposition (MOCVD)) methods, modern implant samples (Ti alloy and CFR-PEEK polymer, 30% carbon fiber) were functionalized with film heterostructures consisting of an iridium or gold sublayer, on the surface of which an antibacterial component (silver) was deposited: Ag/Ir(Au)/Ti(CFR-PEEK). The biocidal effect of the heterostructures was investigated, the effect of the surface relief of the carrier and the metal sublayer on antibacterial activity was established, and the dynamics of silver dissolution was evaluated. It has been shown that the activity of Ag/Ir heterostructures was due to high Ag+ release rates, which led to rapid (2–4 h) inhibition of P. aeruginosa growth. In the case of Ag/Au type heterostructures, the inhibition of the growth of P. aeruginosa and S. aureus occurred more slowly (from 6 h), and the antibacterial activity appeared to be due to the contribution of two agents (Ag+ and Au+ ions). It was found, according to the in vitro cytotoxicity study, that heterostructures did not exhibit toxic effects (cell viability > 95–98%). An in vivo biocompatibility assessment based on the results of a morphohistological study showed that after implantation for a period of 30 days, the samples were characterized by the presence of a thin fibrous capsule without volume thickening and signs of inflammation. [ABSTRACT FROM AUTHOR]

The document is a comprehensive list of upcoming conferences and events related to materials science, corrosion, and various other topics. These events will be held in different countries around the world, providing opportunities for researchers and professionals to gather and exchange knowledge. The topics covered in these events are diverse, ranging from industrial computed tomography to nuclear security. The document includes contact information and website links for each event, making it easy for library patrons to access further information. [Extracted from the article]

PN junction with p-Si / n-Ga2O3 structure was developed by metal organic chemical vapor deposition (MOCVD) technology on p-type Si (111) substrate. The crystal structure, surface morphology and surface roughness were measured by X-ray diffractometer and atomic force microscope. Then Ti / Au electrodes on these samples were developed by magnet sputtering and evaporation for testing the PN junction characteristics such as I-V curve chart, threshold voltage, on-off current ratio, reverse saturation current, ideal factor, and the barrier height at zero bias voltage. The regulation of PN junction characteristics with growing parameters such as doping concentration and film thickness was studied, and the reasons were given. The crystal quality of β-Ga2O3 thin film and the characteristics of the devices were improved by two-step growing method. A set of PN junction samples were fabricated at three different temperatures when the buffer was developed. Finally, the best conditions of fabricating the PN junction devices was found, and the lattice mismatch and thermal mismatch between Si substrate and β-Ga2O3 thin film were reduced. A high quality n-type β-Ga2O3 thin film with surface roughness of 4. 21 nm and a PN junction with low ideal factor of 42. 1 was obtained. [ABSTRACT FROM AUTHOR]

Pesticides are emerging contaminants that pose various risks to human health and aquatic ecosystems. In this work, diuron was considered as a contaminant model to investigate the influence of the back-side illumination mode (BSI) on the photocatalytic activity of TiO2 coatings grown on Pyrex plates by metal–organic chemical vapour deposition (MOCVD). A photoreactor working in recirculation mode was irradiated at 365 nm with ultraviolet A (UVA) light-emitting diodes in BSI. The degradation of diuron and its transformation products was analysed by high-performance liquid chromatography, ion chromatography, and total organic carbon analysis. The coatings were characterised by X-ray diffraction analysis and scanning electron microscopy. Five coatings containing 3, 7, 10, 12 and 27 mg of TiO2 exhibited different morphology, crystallinity, thickness and photocatalytic activities. The morphology and crystallinity of the coatings had no significant influence on their photocatalytic activity, unlike their mass and thickness. TiO2 contents less than 10 mg limit the photocatalytic activity, whereas those greater than 15 mg are inefficient in the BSI because of their thickness. The maximum efficiency was achieved for coatings of thickness 1.8 and 2 µm with TiO2 contents of 10 and 12 mg, revealing that the photocatalyst thickness controls the photocatalytic efficiency in the BSI. [ABSTRACT FROM AUTHOR]

The trivalent terbium ion (Tb3+) emits ultra-stable visible light consisting of blue, green, yellow, and red. Tb-doped semiconductors are candidates for novel full-color light sources in next-generation displays. Particularly, Tb-doped AlxGa1−xN (AlxGa1−xN:Tb) has attracted much attention for device applications. We present the luminescence properties of AlxGa1−xN:Tb grown by the organometallic vapor phase epitaxy. At 15 K, emission related to the 5D4–7FJ (J = 3, 4, 5, 6) transitions is observed for AlxGa1−xN:Tb with x ≥ 0.03. Thermal quenching of emission originating from the 5D4–7FJ transition is suppressed for higher Al compositions, and the luminescence is clearly observed at room temperature for AlxGa1−xN:Tb with x ≥ 0.06. The small thermal quenching is attributed to the enhanced excitation to the 5D4 level of Tb3+ ions via the 4f–5d transition and not due to the suppression of energy back-transfer paths in excited Tb3+ ions. Although additional emission originating from the 5D3–7FJ transitions is observed at 15 K for AlxGa1−xN:Tb with x ≥ 0.15, it is not observed at room temperature because the excitation to the 5D3 level via the 4f–5d transition is less efficient at high temperature. For Al0.15Ga0.85N:Tb, monochromatic green light is demonstrated using a SiO2/ZrO2 distributed Bragg reflector. [ABSTRACT FROM AUTHOR]

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies. [ABSTRACT FROM AUTHOR]

In this study, the impact of organometallic chemical vapor deposition (MOCVD) deposition temperature on the growth mechanism of SiOC coatings was studied in detail. For this purpose, four different SiOC coatings were prepared at deposition temperatures of 1050, 1100, 1150, and 1200 °C. The surface morphology and surface roughness of the prepared coatings were examined by field-emission scanning electron microscope (FESEM) and atomic force microscope (AFM), respectively. X-ray photoelectron spectroscopy (XPS) was employed to analyze the composition and structural units in the prepared coatings. The phase structure of SiOC coatings was analyzed by grazing incident diffraction of x-rays (GIXRD) and high resolution transmission electron microscope (HRTEM). Results revealed that, the starting temperature of homogeneous reaction in the cavity is 1100 °C, while the degree of heterogeneous reaction in the cavity reaches its maximum value at 1200 °C. With the increase in deposition temperature, more surface protrusions, a greater degree of homogeneous reaction and the evolution of graphite and 3C-SiC crystalline phases are resulted, which lead to the reduction of deposition rate of SiOC coatings. Furthermore, for SiOC coatings, flat surface morphology and less content of Si-O-Si bonds improve the HF acid etching resistance of SiOC coatings. [ABSTRACT FROM AUTHOR]

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 × 109 cm−2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm−2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN) has attracted significant interest as a next-generation semiconductor material with various potential applications. During metalorganic chemical vapor deposition (MOCVD) of GaN using trimethyl gallium (TMG) and NH3, dimeric precursors are produced by gas-phase reactions such as adduct formation or thermal decomposition. In this work, the surface adsorption reactions of monomeric and dimeric Ga molecules including TMG, [(CH3)2Ga(NH2)]2, and [(CH3)GaNH]2 on the GaN surface are investigated using density functional theory calculations. It is found that [(CH3)2Ga(NH2)]2 is the most predominant form among the various dimeric precursors under typical GaN MOCVD process conditions. Our results indicate that the dimeric [(CH3)GaNH]2 precursor, which is generated through the thermal decomposition of [(CH3)2Ga(NH2)]2, would have higher reactivity on the GaN surface. Our work provides critical insights that can inform the optimization of GaN MOCVD processes, leading to advancements in GaN-based high-performance semiconductors. [ABSTRACT FROM AUTHOR]

Spin polarized photocathodes are key to the future operation of electron accelerators such as the ones at Thomas Jefferson National Accelerator Facility and Brookhaven National Laboratory. Currently, these photocathodes come in short supply due to limited production by molecular beam epitaxy. By developing a process to implement similar structures using metal organic chemical vapor deposition, the availability of these devices can be increased. In this paper, we detail the implementation of recent photocathode advancements via metal organic chemical vapor deposition process and show an improvement in both polarization and quantum efficiency of our devices compared to those fabricated via molecular beam epitaxy, with devices reaching 82% polarization and 2.9% quantum efficiency. [ABSTRACT FROM AUTHOR]

Under vacuum environment, an H interstitial must exist when Ga2O3 is prepared by organometallic chemical vapor deposition. However, few first‐principles systematic studies have been conducted on the influences of point vacancies (VGa, Hi) on the photocatalytic performance and magnetism of Ga2O3:(Li or Na or K) systems, and VGa is a challenge in experiments. Therefore, the first‐principles generalized gradient approximation GGA + U theory is adopted in this study. A first‐principles study is conducted on the formation energy (Ef), photocatalytic performance, and magnetism of Ga30MO48 (M = Li or Na or K) and Ga30MHiO48 systems. In the results, it is shown that under Ga‐poor conditions, the Ga30MO48 and Ga30MHiO48 systems are structurally stable and prone to doping. The Ga30MHiO48 system has lower Ef, more structural stability, and easier doping than the Ga30MO48 system. The Ga30KO48 system exhibits magnetism, mainly generated by the O1−‐2p spin‐polarized wandering electrons near VGa. The spin‐polarized O2−‐2p and Ga‐4s states near VGa contribute to the hybrid coupling double‐exchange interaction. Moreover, the visible spectrum of the Ga30LiHiO48 system exhibits a significant redshift, a relatively high carrier activity, carrier separation, and relative maximum lifetime. It is relatively best as a photocatalyst. [ABSTRACT FROM AUTHOR]

In the flexible photovoltaic (PV) industry, increment of the metal‐organic chemical vapor deposition (MOCVD) deposition zone is crucial to reducing the cost of ownership and increasing the power conversion efficiency (PCE). This implies that the larger closed coupled showerhead (CCS) of MOCVD system should be used in the manufacture of flexible gallium arsenide (GaAs) PV thin‐film solar cells. Currently, Aixtron Crius II is the largest commercial CCS reactor for GaAs deposition with 55 × 2 inches circular wafers. As the size of the carrier and showerhead increases, the deposition uniformity and gas flow stability become more difficult to control. To address these issues, previous studies have investigated the effects of geometric and process parameters of MOCVD on the vertical process gas inlet, with either a rotating carrier model represented by Veeco using high‐speed rotating carrier (Turbo Disc), and Aixtron using low‐speed rotating planetary carrier, or a horizontal process gas injector with a rotating carrier. However, these efforts have limited further capacity scale‐up. In this study, numerical simulations and fluid visualization experiments are conducted, based on previous research on thermal uniformity, for design optimization of a gas distribution system in a large square GaAs‐MOCVD reactor. The achieved reactor capacity is 36 × 4 inches square wafers in one process cycle, and the optimal average deposition rate and deposition uniformity of GaAs film are ≈0.430 µm min−1 and 0.93%, respectively. [ABSTRACT FROM AUTHOR]

Reduction in the size, weight, and power (SWaP) consumption of an infrared (IR) detection system is one of the critical challenges lying ahead for the development of IR detector technology, especially for mid-/long-wavelength IR wave bands, which calls for high operating temperature (HOT) IR photodetectors (PDs) with good sensitivity that would ease the burden for cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR PDs and focal plane array (FPA) imagers have gradually stepped into real-world applications after decades of development thanks to their outstanding material properties, tunability of cutoff wavelengths, feasibility of device designs, and great potential for mass production with low costs. Meanwhile, the emerging demands of versatile applications seek fast, compact, and smart IR detection systems, in which the integration of Sb-based IR PDs on a Si platform enables direct information readout and processing with Si-based microelectronics. This paper reviews recent progress in Sb-based HOT IR PDs and FPAs, including the fundamental material properties and device designs based on bulk InAsSb, InAs/GaSb, and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers new trends of development in Sb-based IR PDs, such as optical engineering for signal harvesting, photonic integration techniques, as well as metal organic chemical vapor deposition growth of antimonides. Finally, challenges and possible solutions for future studies are provided from the perspectives of material growth, device design, and imaging systems. New advances in response to these existing challenges may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs), and more extensive emerging applications may be found. [ABSTRACT FROM AUTHOR]

We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors. [ABSTRACT FROM AUTHOR]

Spray parameters were fixed to depositing a MCrAlY coating by HVOF process on IN-708 substrate. The deposited coatings exhibited a microstructure with characteristic splats and β and γ phases. An MOCVD process was subsequently carried out to deposit a thin alumina layer on the sprayed MCrAlY coating. Cyclic oxidation tests were conducted at high temperature on the alumina/MCrAlY coating system. Both SEM and XRD analyses were used to characterize the thermally grown oxide after cyclic oxidation. A kinetic analysis was done to determinate the behaviour of the alumina/MCrAlY coating system during oxidation. [ABSTRACT FROM AUTHOR]

Among semiconductor metal oxides, that are an important class of sensing materials, titanium dioxide (TiO2) thin films are widely employed as sensors because of their high chemical and mechanical stability in harsh environments, non-toxicity, eco-compatibility, and photocatalytic properties. TiO2-based chemical oxygen demand (COD) sensors exploit the photocatalytic properties of TiO2 in inducing the oxidation of organic compounds to CO2. In this work, we discuss nanostructured TiO2 thin films grown via low-pressure metal organic chemical vapor deposition (MOCVD) on metallic AISI 316 mesh. To increase the surface sensing area, different inorganic acid-based chemical etching protocols have been developed, determining the optimal experimental conditions for adequate substrate roughness. Both chemically etched pristine meshes and the MOCVD-coated ones have been studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) microanalysis, and X-ray photoelectron spectroscopy (XPS). We demonstrate that etching by HCl/H2SO4 at 55 °C provides the most suitable surface morphology. To investigate the behavior of the developed high surface area TiO2 thin films as COD sensors, photocatalytic degradation of functional model pollutants based on ISO 10678:2010 has been tested, showing for the best performing acid-etched mesh coated with polycrystalline TiO2 an increase of 60% in activity, and degrading 66 µmol of MB per square meter per hour. [ABSTRACT FROM AUTHOR]

In this paper, we report light ion (H+) implantation-induced effect on a-plane GaN epitaxial layer on the sapphire substrate. Non-polar (NP) a-plane GaN (11–20) epitaxial layer is grown on an r-plane sapphire substrate by the metal–organic chemical vapour deposition (MOCVD) technique. The H+ ion-implanted NP (11–20) GaN epitaxial layer (dose 1 × 1017 cm−2 and 170 keV energy) is annealed by the rapid thermal annealing (RTA) process. The un-implanted a-GaN, H+ ion-implanted and annealed samples are investigated structurally and optically by High-resolution X-ray diffraction (HRXRD), Atomic force microscopy (AFM), Raman spectroscopy and Emission characterisation techniques. HRXRD analysis infers that implanted GaN sample is hydrostatically strained up to implanted depth. Raman scattering study by green laser excitation found defect-activated Raman scattering (DARS) due to lattice distortion by ion implantation in the implanted sample and annealed out partially after annealing. The Raman peak intensity ratio between the E2 (high) and LO peak of the above bandgap excited laser (~ 266 nm) was around 3.92 in the un-implanted GaN layer whilst after implantation, the ratio was reduced to ~ 0.97 because implantation induces the defect-activated centre which increased the LO peak intensity. After annealing, the ratio between E2 (high) and LO peak was increased by ~ 2.5. After annealing due to partial recovery and reduction in the implantation-induced defected activated centre, the a-plane GaN thin layer can be transferred to the other substrate easily by exfoliation or ion-cutting process and can be used in electronics and optoelectronic devices. [ABSTRACT FROM AUTHOR]

- 7.3.New Orleans, LA (USA)AMPP Annual Conference + Expo 2024Association for Materials Protection and PerformanceHouston, TexasUSALesley.Martinez@ampp.org12. + 27.2.Oberhof(Germany)& online6th European Symposium on Friction, Wear and Wear ProtectionFriction 2024German Materials Society (DGM):Sankt AugustinGermanydgm@dgm.deMarch 20246. Beijing (China)Third World Congress on Condition Monitoring (3rd WCCM)China Special Equipment Inspection and Research InstituteBeijingChina3rdwccm@csei.org.cn15. [Extracted from the article]

Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are two versatile growth techniques that can readily produce multilayer structures with atomic-level precision control, which have found broad applications in technology. However, compared to MBE, MOCVD growth involves the surface reaction of metal-organic precursor compounds, which changes during film deposition. Consequently, a thorough investigation on the chemical profile layer-by-layer is critical for optimizing MOCVD film performance. Here, we examine Sb segregation in an MOCVD-grown InAs/InAs1−xSbx superlattice by analyzing composition and lattice strain at atomic resolution using scanning transmission electron microscopy and compare with the previously reported MBE growth results. Our findings show a different Sb profile along the growth direction in MOCVD, with the segregation coefficient being higher at the InAsSb-on-InAs interface (0.807 ± 0.021) than at the InAs-on-InAsSb interface (0.695 ± 0.009), giving rise to asymmetric composition and lattice strain profiles unlike those obtained with MBE. Furthermore, we obtain direct evidence of Sb clusters with size of ∼1–3 nm and Sb ordering within the InAs1−xSbx layer, which is largely absent in the reported MBE growth. These findings demonstrate the concurrent interplay between surface segregation, surface reconstruction, and surface reaction that is unique to MOCVD growth with broad implications on preparing Sb-containing quantum materials. [ABSTRACT FROM AUTHOR]

A high-quality β-Ga2O3 film was grown on a (111) GaAs substrate using the metal organic chemical vapor deposition method. The band alignment of the β-Ga2O3/GaAs heterojunction interface was determined by x-ray photoelectron spectroscopy. The energy-band structure of β-Ga2O3/GaAs was constructed based on the binding energies of Ga 3d and As 3d core levels as well as valence band maximum values. The valence band offset was determined to be 3.50 ± 0.05 eV. As a consequence, a type-ΙΙ heterojunction with a conduction band offset of 0.12 ± 0.05 eV was determined in the present study. The accurate determination of the band alignment of the β-Ga2O3/GaAs heterojunction provided useful information for the application in β-Ga2O3/GaAs-based devices. [ABSTRACT FROM AUTHOR]

The growth of hexagonal boron nitride (h‐BN) and van der Waals (vdW) epitaxy of blue multi‐quantum well (MQW) GaN‐based LED heterostructures on 6‐inch sapphire substrates using metal‐organic chemical vapour deposition (MOCVD) is demonstrated. Challenges associated with the growth of large surface h‐BN and the subsequent vdW epitaxy of GaN‐based LED heterostructures are discussed. To overcome these challenges, the spatial uniformity is controlled of the growth temperature, optimizes the slope of temperature variations during the growth and cooling process, and manages the surface temperature during switching of gas flows. With these adaptations, high quality GaN‐based LED heterostructures are grown on h‐BN without any spontaneous delamination. The GaN‐based LED devices are then fabricated on a 6‐inch sapphire wafer, which are lifted off as a membrane and transferred to a flexible copper support. These GaN‐based LED devices emitt bright blue illumination with an electroluminescence peak at 437 nm. This scaling up of growth, lift‐off, and transfer can lead to the commercialization of GaN‐based LEDs on h‐BN template on 6‐inch sapphire substrates, with a process compatible with current modern equipment for the fabrication of LEDs and electronic devices. [ABSTRACT FROM AUTHOR]

The AlGaN photocathode with a superlattice emission layer was grown by metal organic chemical vapor deposition. The existence of the superlattice structure was confirmed using a transmission electron microscope, and its optical and electrical properties were measured. The results showed that the introduction of a superlattice emission layer can reduce the transmittance and reflectance at 275 nm and improve the absorption of incident light. In particular, the Hall measurement results indicate that the introduction of a superlattice structure can significantly increase the concentration of holes in the AlGaN photocathode material. The activation experiment demonstrated that the photocurrent of the AlGaN photocathode subassembly with a superlattice structure increased significantly after Cs/O activation and that it showed better photoemission performance. The increase in the incident light absorption to produce more photoelectrons, the enhancement of photoelectron transport capacity by the polarized electric field generated by the superlattice structure, and the reduction in the surface barrier caused by the higher hole concentration were responsible for the significant improvement in photoemission performance. [ABSTRACT FROM AUTHOR]

- 1.5.Cascais (Portugal)SMST (Shape Memory and Superelastic Technologies) Conference and Exposition 2024ASM InternationalMateriakls ParkUSAmemberservicecenter@asminternational.org26. - 1.5.Milan (Italy)The International Thermal Spray Conference and Exposition (ITSC 2024)ASM InternationalMateriakls ParkUSAmemberservicecenter@asminternational.orgMay 202412. - 7.3.Orlando (USA)TMS 2024 Annual Meeting & ExhibitionTMSPittsburghUSAmembership@tms.org3. [Extracted from the article]

Quantum dots (QDs) play an important role in fabricating electronic, photonic, and optoelectronic devices with enhanced functions and performance. There are two typical epitaxial methods for growing semiconductor QDs, one is stress-driven self-assembly, i.e., Stranski–Krastanov (S–K), and the other is droplet epitaxy (DE). The former was developed faster in earlier years and usually referred to as conventional method while the latter has attracted increasing interest in recent years driven by increasing requirement for high quality QDs towards quantum computing applications. Physically, the nucleation of QDs in both methods are self-assembly surface reactions, which have limited site-control for nucleation on flattened substrate. Pre-patterning of substrate was developed to regularly locate the nucleation sites but may also cause undesired contaminations. Laser-interference-assisted growth has emerged in the past few years, which provides a non-contact in-situ patterning for the nucleation of QDs arrays. This overview provides a glimpse of recent advances in epitaxial growth of QDs towards their advanced photonic and optoelectronic applications. [ABSTRACT FROM AUTHOR]

Nonpolar a-plane GaN films with three-dimensional (3D) GaN layers have successfully grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The inserted 3D GaN layers were grown accompanied with the treatment by various kinds of elements such as Si, Mg, and In to further improve the characteristics of the subsequently lateral overgrown nonpolar a-plane GaN films. Scanning electron microscopy, x-ray rocking curve, and room temperature photoluminescence spectroscopy were used to examine the effects of the introduction of the specific element-treated 3D GaN layer on the crystalline quality, the anisotropy, and the optical property of the nonpolar a-plane GaN film. It was found that significant improvements in the crystalline quality and optical property as well as a remarkable reduction in anisotropy have been achieved for the nonpolar a-plane GaN film grown on the r-plane sapphire substrate by inserting a 3D GaN layer treated with Si. In fact, evident reduction in full width at half maximum of x-ray rocking curves from 972 to 651 arcsec along the c-axis (φ = 0°) and from 1234 to 752 arcsec along the m-axis (φ = 90°), and a notable decrease in anisotropy from 27.0% to 15.6% were obtained with the employment of Si treatment to the 3D GaN layer. [ABSTRACT FROM AUTHOR]

The monoclinic structures of vanadium dioxide are widely studied as appealing systems due to a plethora of functional properties in several technological fields. In particular, the possibility to obtain the VO2 material in the form of thin film with a high control of structure and morphology represents a key issue for their use in THz devices and sensors. Herein, a fine control of the crystal habit has been addressed through an in-depth study of the metal organic chemical vapor deposition (MOCVD) synthetic approach. The focus is devoted to the key operative parameters such as deposition temperature inside the reactor in order to stabilize the P21/c or the C2/m monoclinic VO2 structures. Furthermore, the compositional purity, the morphology and the thickness of the VO2 films have been assessed through energy dispersive X-ray (EDX) analyses and field-emission scanning electron microscopy (FE-SEM), respectively. THz time domain spectroscopy is used to validate at very high frequency the functional properties of the as-prepared VO2 films. [ABSTRACT FROM AUTHOR]