Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices.

This document is a collection of research papers on wide- and ultrawide-bandgap electronic semiconductor devices. It focuses on the progress and challenges in developing devices made from wide-bandgap materials like GaN, AlGaN, AlN, Ga2O3, BN, and diamond for power, rf, and photonic applications. The papers cover topics such as improving GaN power devices, exploring new wide bandgap materials, and investigating gate insulator properties. Additionally, there are papers on defect detection, new concepts for wide bandgap devices, and the growth and properties of different materials. The research provides valuable insights for researchers interested in using these materials in electronic devices. [Extracted from the article]