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2D layered semiconductors with excellent light−matter interaction and atomic‐scale thickness have been envisioned as promising candidates for more than Moore and beyond Moore technologies. Here, for the first time, a multi‐functional platform is reported that is fabricated entirely from wrinkle‐free 2D ferroelectric semiconductor α‐In2Se3 integrated with a photodetector, reconfigurable logic switching, and visual perception processing functions. The intensity‐ and wavelength‐dependent resistance is used to demodulate broadband optical information into electrical signals and perform reconfigurable logic switching. Moreover, the platform offers dynamically modulated photosensitive visual sensing in different working modes at the pixel level. Using photo‐assisted piezoresponse force microscopy, the optical‐engineered ferroelectric polarization switch behavior is explored. The platform has excellent sensitivity to both optical and electrical stimuli and can respond to lights in the visible to short‐wavelength infrared region in volatile/non‐volatile manner under gate voltage modulation, with a response of 98 mA W−1 (to 1800 nm light), a current on/off ratio of over 106, and a high field‐effect mobility of 137.55 cm2 V−1 s−1. With its simple structure, unique photoelectric interaction, and controllable operating mechanism, the platform has the potential to simplify the complexity of neuromorphic computing circuitry systems, paving the way for high‐performance hybrid technologies suitable for artificial intelligence applications. [ABSTRACT FROM AUTHOR]

α-In2Se3 has attracted increasing attention in recent years due to its excellent electrical and optical properties. Especially, attention has been paid to its peculiar ferroelectric and piezoelectric properties which most other two-dimensional (2D) materials do not possess. This paper presents the first measurement of the thickness-dependent band gaps of few-layer α-In2Se3 by electron energy loss spectroscopy (EELS). The band gap increases with decreasing film thickness which varies from 1.44 eV in a 48 nm thick area to 1.64 eV in an 8 nm thick area of the samples. Further, by combining the improved exchange-correlation potential and proper screening of the internal electric field in an advanced 2D electronic structure technique, we have been able to obtain the structural dependence of the band gap within density functional theory up to hundreds of atoms. This is also the first calculation of a similar type for 2D ferroelectric materials. Both experiment and theory suggest that the variation of the band gap of α-In2Se3 fits well with the quantum confinement model for 2D materials. [ABSTRACT FROM AUTHOR]

Protein molecules were directly embeddedin metal–organicframeworks (MOFs) by a coprecipitation method. The protein moleculesmajorly embedded on the surface region of MOFs display high biologicalactivities. As a demonstration of the power of such materials, theresulting Cyt cembedded in ZIF-8 showed a 10-foldincrease in peroxidase activity compared to free Cyt cin solution and thus gave convenient, fast, and highly sensitivedetection of trace amounts of explosive organic peroxides in solution. [ABSTRACT FROM AUTHOR]

2D layered semiconductors with excellent light−matter interaction and atomic‐scale thickness have been envisioned as promising candidates for more than Moore and beyond Moore technologies. Here, for the first time, a multi‐functional platform is reported that is fabricated entirely from wrinkle‐free 2D ferroelectric semiconductor α‐In2Se3 integrated with a photodetector, reconfigurable logic switching, and visual perception processing functions. The intensity‐ and wavelength‐dependent resistance is used to demodulate broadband optical information into electrical signals and perform reconfigurable logic switching. Moreover, the platform offers dynamically modulated photosensitive visual sensing in different working modes at the pixel level. Using photo‐assisted piezoresponse force microscopy, the optical‐engineered ferroelectric polarization switch behavior is explored. The platform has excellent sensitivity to both optical and electrical stimuli and can respond to lights in the visible to short‐wavelength infrared region in volatile/non‐volatile manner under gate voltage modulation, with a response of 98 mA W−1 (to 1800 nm light), a current on/off ratio of over 106, and a high field‐effect mobility of 137.55 cm2 V−1 s−1. With its simple structure, unique photoelectric interaction, and controllable operating mechanism, the platform has the potential to simplify the complexity of neuromorphic computing circuitry systems, paving the way for high‐performance hybrid technologies suitable for artificial intelligence applications. [ABSTRACT FROM AUTHOR]

The inherent stability and recalcitrance of benzene ring structures render aromatic compounds a major ecological concern and a substantial risk to human health. Hence, developing a facile and efficacious detection technique for aromatic compounds is essential. As our comprehension of aromatic compound characteristics deepens, microbial cell-based biosensors have emerged as increasingly popular tools in the detection of aromatic compounds. This article introduces the operational principles of microbial whole-cell biosensors and elucidates the construction techniques and applications of electroactive biofilm-based microbial whole-cell sensors, transcription factor-based microbial whole-cell sensors, and degradation gene promoter-dependent microbial whole-cell sensors in the detection of aromatic compounds. In addition, we review the methodologies for improving the performance of microbial whole-cell sensors based on surface display, logic gate construction, genetic circuit modification, and quorum sensing signal amplification.

α-In 2 Se 3 has attracted increasing attention in recent years due to its excellent electrical and optical properties. Especially, attention has been paid to its peculiar ferroelectric and piezoelectric properties which most other two-dimensional (2D) materials do not possess. This paper presents the first measurement of the thickness-dependent band gaps of few-layer α-In 2 Se 3 by electron energy loss spectroscopy (EELS). The band gap increases with decreasing film thickness which varies from 1.44 eV in a 48 nm thick area to 1.64 eV in an 8 nm thick area of the samples. Further, by combining the improved exchange-correlation potential and proper screening of the internal electric field in an advanced 2D electronic structure technique, we have been able to obtain the structural dependence of the band gap within density functional theory up to hundreds of atoms. This is also the first calculation of a similar type for 2D ferroelectric materials. Both experiment and theory suggest that the variation of the band gap of α-In 2 Se 3 fits well with the quantum confinement model for 2D materials.

Special surface plays a crucial role in nature as well as in industry. Here, the surface morphology evolution of ZnO during wet etching is studied by in situ liquid cell transmission electron microscopy and ex situ wet chemical etching. Many hillocks are observed on the (000 1 ¯ ) O-terminated surface of ZnO nano/micro belts during in situ etching. Nanoparticles on the apex of the hillocks are observed to be essential for the formation of the hillocks, providing direct experimental evidence of the micromasking mechanism. The surfaces of the hillocks are identified to be {01 1 ¯ 3 ¯ } crystal facets, which is different from the known fact that {01 1 ¯ 1 ¯ } crystal facets appear on the (000 1 ¯ ) O-terminated surface of ZnO after wet chemical etching. O 2 plasma treatment is found to be the key factor for the appearance of {01 1 ¯ 3 ¯ } instead of {01 1 ¯ 1 ¯ } crystal facets after etching for both ZnO nano/micro belts and bulk materials. The synergistic effect of acidic etching and O-rich surface caused by O 2 plasma treatment is proposed to be the cause of the appearance of {01 1 ¯ 3 ¯ } crystal facets. This method can be extended to control the surface morphology of other materials during wet chemical etching., (© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)