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Abstract: Transition-metal silicides have been used in the salicide process to form gate and source/drain contacts in MOSFET devices. How to control silicide formation in shallow junction devices and the kinetics of single silicide phase formation between the Si and metal thin films have received extensive attention and study. As the trend of miniaturization of Si devices moves from 45nm to smaller sizes, the formation of nanoscale metal silicides has attracted renewed interest in silicide formation. Nanostructures in Si nanowires have been studied for basic components in electronic and optoelectronics devices, especially for biosensors. Well-defined nanoscale building blocks such as ohmic contacts and gates on Si nanowires must be developed in order to be assembled into functional circuit components in future nanotechnology. It requires a systematic study of solid-state chemical reactions in the nanoscale to form these circuit components. In this review, we compare silicide formation in thin films and in nanowires and focus on the nucleation and growth of epitaxial silicides. The difference of silicide formation between the thin film case and the nanowire case, especially the kinetics of nucleation and growth, will be emphasized. [ABSTRACT FROM AUTHOR]

We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heteorstructure has an atomically sharp interface with epitaxial relationships of Si[11̅0]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities ∼28.6 μΩ·cm and high breakdown current densities >1 × 108 A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/µm, field-effect hole mibility of 168 cm2/V·s, and on/off ratio >107, demonstrating the best performing device from intrinsic silicon nanowires. [ABSTRACT FROM AUTHOR]

In this study, indium tin oxide nanowires (ITO NWs) with high density and crystallinity were synthesized by chemical vapor deposition (CVD) via a vapor–liquid–solid (VLS) route; the NWs were decorated with 1 at% and 3 at% silver nanoparticles on the surface by a unique electrochemical method. The ITO NWs possessed great morphologies with lengths of 5~10 μm and an average diameter of 58.1 nm. Characterization was conducted through transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and X-ray photoelectron spectroscope (XPS) to identify the structure and composition of the ITO NWs. The room temperature photoluminescence (PL) studies show that the ITO NWs were of visible light-emitting properties, and there were a large number of oxygen vacancies on the surface. The successful modification of Ag was confirmed by TEM, XRD and XPS. PL analysis reveals that there was an extra Ag signal at around 1.895 eV, indicating the potential application of Ag-ITO NWs as nanoscale optical materials. Electrical measurements show that more Ag nanoparticles on the surface of ITO NWs contributed to higher resistivity, demonstrating the change in the electron transmission channel of the Ag-ITO NWs. ITO NWs and Ag-ITO NWs are expected to enhance the performance of electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out in situ in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal NiSi/Si/NiSi heterostructures of atomically sharp interfaces for nanoscale devices. [ABSTRACT FROM AUTHOR]

We report an efficient method to synthesize undoped and K-doped rare cubic tungsten trioxide nanowires through the thermal evaporation of WO3 powder without a catalyst. The WO3 nanowires are reproducible and stable with a low-cost growth process. The thermal evaporation processing was conducted in a three-zone horizontal tube furnace over a temperature range of 550–850 °C, where multiple substrates were placed at different temperature zones. The processing parameters, including pressure, temperature, type of gas, and flow rate, were varied and studied in terms of their influence on the morphology, aspect ratio and density of the nanowires. The morphologies of the products were observed with scanning electron microscopy. High resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction studies were conducted to further identify the chemical composition, crystal structure and growth direction of the nanostructures. Additionally, the growth mechanism has been proposed. Furthermore, we investigated the potassium doping effect on the physical properties of the nanostructures. Photoluminescence measurements show that there were shorter emission bands at 360 nm and 410 nm. Field emission measurements show that the doping effect significantly reduced the turn-on electric field and increased the enhancement factor. Furthermore, as compared with related previous research, the K-doped WO3 nanowires synthesized in this study exhibited excellent field emission properties, including a superior field enhancement factor and turn-on electric field. The study reveals the potential of WO3 nanowires in promising applications for sensors, field emitters and light-emitting diodes. [ABSTRACT FROM AUTHOR]

Indium oxide (In2O3) is a widely used n-type semiconductor for detection of pollutant gases; however, its gas selectivity and sensitivity have been suboptimal in previous studies. In this work, zinc-doped indium oxide nanowires with appropriate morphologies and high crystallinity were synthesized using chemical vapor deposition (CVD). An accurate method for electrical measurement was attained using a single nanowire microdevice, showing that electrical resistivity increased after doping with zinc. This is attributed to the lower valence of the dopant, which acts as an acceptor, leading to the decrease in electrical conductivity. X-ray photoelectron spectroscopy (XPS) analysis confirms the increased oxygen vacancies due to doping a suitable number of atoms, which altered oxygen adsorption on the nanowires and contributed to improved gas sensing performance. The sensing performance was evaluated using reducing gases, including carbon monoxide, acetone, and ethanol. Overall, the response of the doped nanowires was found to be higher than that of undoped nanowires at a low concentration (5 ppm) and low operating temperatures. At 300 °C, the gas sensing response of zinc-doped In2O3 nanowires was 13 times higher than that of undoped In2O3 nanowires. The study concludes that higher zinc doping concentration in In2O3 nanowires improves gas sensing properties by increasing oxygen vacancies after doping and enhancing gas molecule adsorption. With better response to reducing gases, zinc-doped In2O3 nanowires will be applicable in environmental detection and life science. [ABSTRACT FROM AUTHOR]

Two-dimensional antimonene has attracted much attention because of its excellent stability and remarkable physical properties. Understanding the growth mechanism of antimonene by investigating processing parameters and structural properties is necessary for developing reliable fabrication methods. In this study, NaCl-assisted van der Waals epitaxy, one of the methods for scale-up fabrication, is employed to achieve atomic layer antimonene with high coverage rate. Furthermore, high-resolution images of atomic structure are presented with the powerful transmission electron microscopy, helping us confirm the exact configuration of antimonene. Meanwhile, we studied the effect of electron beam irradiation on antimonene; it was found that the stacking structure of antimonene would change under electron beam irradiation, and the moiré patterns of twisted few-layered antimonene were also observed. These results provide comprehensive study of growth mechanisms and in-depth knowledge of antimonene nanostructure, which are expected to facilitate the development of controllable fabrication for future device applications. The different reaction pathways induced by electron beam irradiation with the in situ TEM imaging of the evolution of the microstructure of antimonene: knock-on effects and formation of Moiré patterns. [Display omitted] [ABSTRACT FROM AUTHOR]

Tungsten oxide has drawn widespread attention due to its outstanding physical properties; however, the use of high temperature, low pressure, and expensive catalysts has been challenging in the synthesis of tungsten oxide nanowires. In this study, we developed a single step thermal evaporation process without any catalyst to synthesize WO3−x nanowires on silicon substrates and indium tin oxide glass substrate safely and economically. We utilized the Taguchi method to design experiments for the synthesis of tungsten oxide nanowires and analyze the effect of processing parameters. The growth mechanism of nanowires is proposed to be a vapor–solid mechanism. Confirmed to be oxygen-vacancy-rich WO3−x nanowires through high-resolution transmission electron microscopy studies, the nanowires have a great morphology with a high aspect ratio of around 700. The electrical resistivity of a single WO3−x nanowire at 300 K was measured to be 2.32 × 10−5 Ω M, which is relatively low due to rich oxygen vacancies. We synthesized WO3−x nanowires on an indium tin oxide glass substrate and assembled electrochromic devices with LiClO4/PC as the electrolyte. The devices were demonstrated to have fast coloring and bleaching rates of less than one second at low voltage; at high voltage, the color of the devices could change to a deeper color but take more than 2 seconds to react. Compared with previous works, the electrochromic devices from this study exhibit superior response time and stability. These significant results make WO3−x nanowires promising materials for applications in semiconductors, nanodevices, display and green technology. [ABSTRACT FROM AUTHOR]

Owing to its unique and variable lattice structure and stoichiometric ratio, tungsten oxide is suitable for material modification; for example, doping is expected to improve its catalytic properties. However, most of the doping experiments are conducted by hydrothermal or multi-step synthesis, which is not only time-consuming but also prone to solvent contamination, having little room for mass production. Here, without a catalyst, we report the formation of high-crystallinity manganese-doped and potassium-doped tungsten oxide nanowires through chemical vapor deposition (CVD) with interesting characterization, photocatalytic, and gas sensing properties. The structure and composition of the nanowires were characterized by transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS), respectively, while the morphology and chemical valence were characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. Electrical measurements showed that the single nanowires doped with manganese and potassium had resistivities of 1.81 × 0−5 Ω·m and 1.93 × 10−5 Ω·m, respectively. The doping contributed to the phase transition from monoclinic to metastable hexagonal for the tungsten oxide nanowires, the structure of which is known for its hexagonal electron channels. The hexagonal structure provided efficient charge transfer and enhanced the catalytic efficiency of the tungsten oxide nanowires, resulting in a catalytic efficiency of 98.5% for the manganese-doped tungsten oxide nanowires and 97.73% for the potassium-doped tungsten oxide nanowires after four hours of degradation of methylene blue. Additionally, the gas sensing response for 20 ppm of ethanol showed a positive dependence of doping with the manganese-doped and potassium-doped responses being 14.4% and 29.7%, respectively, higher than the pure response at 250 °C. The manganese-doped and potassium-doped tungsten oxide nanowires are attractive candidates in gas sensing, photocatalytic, and energy storage applications, including water splitting, photochromism, and rechargeable batteries. [ABSTRACT FROM AUTHOR]

With the continuous advancement of high-tech industries, how to properly handle pollutants has become urgent. Photocatalysis is a solution that may effectively degrade pollutants into harmless molecules. In this study, we synthesized single crystalline Zn2SnO4 (ZTO) nanowires through chemical vapor deposition and selective etching. The chemical bath redox method was used to modify the ZTO nanowires with Ag nanoparticles to explore the photocatalytic properties of the nanoheterostructures. The combination of the materials here is rare. Optical measurements by photoluminescence (PL) and UV–Vis show that the PL spectrum of ZTO nanowires was mainly in the visible light region and attributed to oxygen vacancies. The luminescence intensity of the nanowires was significantly reduced after modification, demonstrating that the heterojunction could effectively reduce the electron-hole pair recombination. The reduction increased with the increase in Ag decoration. The conversion from the UV–Vis absorption spectrum to the Tauc Plot shows that the band gap of the nanowire was 4.05 eV. With 10 ppm methylene blue (MB) as the degradation solution, ZTO nanowires exhibit excellent photodegradation efficiency. Reusability and stability in photodegradation of the nanowires were demonstrated. Photocatalytic efficiency increases with the number of Ag nanoparticles. The main reaction mechanism was confirmed by photocatalytic inhibitors. This study enriches our understanding of ZTO-based nanostructures and facilitates their applications in water splitting, sewage treatment and air purification. [ABSTRACT FROM AUTHOR]

High quality single-crystalline NiSi2, Ni2Si and Ni31Si12 nanowire arrays coated with amorphous silicon dioxide were synthesized in high quantity by a nickel transport chemical vapor deposition (CVD) method. The morphological changes with various reaction temperatures, ambient pressures and reaction times, were observed and studied. At 750 °C and 850 °C, cone-shaped nanowire arrays were formed, composed of dense and oriented Ni31Si12 and Ni2Si nanowires with lengths of over 60 μm. The growth mechanisms of the nickel silicide nanowires have been proposed and identified with microscopy studies. Field emission measurements show that the as-grown NiSi2, Ni2Si and Ni31Si12 nanowires were of remarkable field enhancement factors, 2532, 4822 and 4099, respectively, and magnetic property measurements show ferromagnetic characteristics for the Ni2Si and Ni31Si12 nanowires, demonstrating promising potential applications for field emitters, magnetic storage, and biological cell separation. [ABSTRACT FROM AUTHOR]

Single-crystalline iron silicide nanowires were synthesized via an original approach, pre-deposition method (PDM), with significantly improved morphologies and physical characteristics as compared with those fabricated by conventional chemical vapor deposition. In the pre-deposition method, combining rapid thermal annealing (RTA) and chemical vapor deposition (CVD), iron silicide nanowires grew from the heterogeneous nucleation sites on the surface of the thin film without a catalyst or Al2O3 template. The morphology of the nanowires has been considerably improved in terms of alignment and aspect ratio. HRTEM analysis confirms that the nanowires were β-FeSi2 with a crystal direction of [111]. Physical property measurements indicate that compared with CVD β-FeSi2 nanowires, β-FeSi2 nanowires synthesized by the PDM performed better in both the field emission and magnetic properties. Magnetic property measurements show that the coercive field of PDM nanowires increased from 249 Oe to 900 Oe. Field emission studies reveal that the average β value of the CVD β-FeSi2 nanowires was 1060, while that of the PDM nanowires became 1892. Notably, with a furnace, few researchers can successfully synthesize nanowires of β-FeSi2, which is one of the most fascinating silicides for its important applications. [ABSTRACT FROM AUTHOR]

In this work, the titanium germanosilicide (TiSiGe x) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGe x -SL, contributing to a discontinuous thin film layer. A novel titanium disilicide superlattice structure has been observed under in-situ transmission electron microscope at 750 °C. The preferred reaction pathway occurred from the titanium layer to the silicon germanium substrate, eventually forming the island-like superlattice. Additionally, germanium played a significant role in the emergence of the superlattice structure. Image, graphical abstract [ABSTRACT FROM AUTHOR]

In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10−4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping. [ABSTRACT FROM AUTHOR]

In this work, we report a novel and efficient silicidation method to synthesize higher manganese silicide (HMS) nanowires with interesting characterization and physical properties. High density silicon nanowire arrays fabricated by chemical etching reacted with MnCl2 precursor through a unique double tube chemical vapor deposition (CVD) system, where we could enhance the vapor pressure of the precursor and provide stable Mn vapor with a sealing effect. It is crucial that the method enables the efficient formation of high quality higher manganese silicide nanowires without a change in morphology and aspect ratio during the process. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were utilized to characterize the HMS nanowires. High-resolution TEM studies confirm that the HMS nanowires were single crystalline Mn27Si47 nanowires of Nowotny Chimney Ladder crystal structures. Magnetic property measurements show that the Mn27Si47 nanowire arrays were ferromagnetic at room temperature with a Curie temperature of over 300 K, highly depending on the relationship between the direction of the applied electric field and the axial direction of the standing nanowire arrays. Field emission measurements indicate that the 20 μm long nanowires possessed a field enhancement factor of 3307. The excellent physical properties of the HMS nanowires (NWs) make them attractive choices for applications in spintronic devices and field emitters. [ABSTRACT FROM AUTHOR]

In this study, an efficient method to synthesize CuO-CuS core-shell nanowires by two-step annealing process was reported. CuO nanowires were prepared on copper foil via thermal oxidation in a three-zone horizontal tube furnace. To obtain larger surface area for photocatalytic applications, we varied four processing parameters, finding that growth at 550 °C for 3 h with 16 °C/min of the ramping rate under air condition led to CuO nanowires of appropriate aspect ratio and number density. The second step, sulfurization process, was conducted to synthesize CuO-CuS core-shell nanowires by annealing with sulfur powder at 250 °C for 30 min under lower pressure. High-resolution transmission electron microscopy studies show that a 10 nm thick CuS shell formed and the growth mechanism of the nanowire heterostructure has been proposed. With BET, the surface area was measured to be 135.24 m2·g−1. The photocatalytic properties were evaluated by the degradation of methylene blue (MB) under visible light irradiation. As we compared CuO-CuS core-shell nanowires with CuO nanowires, the 4-hour degradation rate was enhanced from 67% to 89%. This could be attributed to more effective separation of photoinduced electron and hole pairs in the CuO-CuS heterostructure. The results demonstrated CuO-CuS core-shell nanowires as a promising photocatalyst for dye degradation in polluted water. [ABSTRACT FROM AUTHOR]

Heterostructured TiO 2 /In 2 O 3 nanowires have been extensively applied in various photonic devices; their performance is highly related to the microstructures, which has not been, however, clearly understood; thus, it is important to investigate the microstructural evolution of the material during processing. In this work, the crystallinity and microstructure of TiO 2 /In 2 O 3 nanowires were successfully controlled with the variation of annealing temperatures via solid-state reactions. The dynamic phase transformation process was demonstrated by in situ transmission electron microscope (TEM). Moreover, the elemental information at different states was identified by energy dispersive spectroscopy (EDS). It is found that different annealing temperatures would contribute to different solid-state reactions and nanowire heterostructures. Additionally, photoresponse studies show characteristics enhancement for such nanoheterostructures. This study provides the knowledge of the fundamental science in kinetics of heterostructured nanostructures, which benefits the improvement of the performance for future photonic applications. [Display omitted] • The solid-state reaction of In 2 O 3 /TiO 2 heterostructured nanowires was investigated by in situ TEM. • The microstructure and crystallinity of TiO 2 were successfully controlled with varying temperatures. • The nanowire would be broken with the reaction length achieving 4.975 times the radius. • A U-shape phase boundary was formed during the diffusion of Ti, resulting from the different diffusion rates of facets. • This study provides the fundamentals in nano-heterostructures, advancing the performance for future photonic applications. [ABSTRACT FROM AUTHOR]

Abstract: The interfacial reactions of the Pd-plated Cu (Pd–Cu) ball bond and 4N Cu (Cu) ball bond on Al were investigated through PCT (Pressure Cooker Test) and HTST (High Temperature Storage Test) tests. The thickness of the interfacial Cu–Al IMC increases as the testing time increases. The Cu Al IMC growth rate was found to be slower in the Pd Cu ball bond than in the Cu ball bond. The growth of the IMC is diffusion-controlled during aging. During the test, the Pd diffuses from the interior of the Pd Cu ball toward the bond interface. FIB (Focus Ion Beam) studies show crack formation at the Cu Al IMC/Al interface in the Cu ball bond. During aging, the Pd-rich layer affected the interdiffusion between Cu and Al and may influence the IMC formation. The Pd Cu ball bond showed better bonding reliability than the Cu ball bond in all tests. [Copyright &y& Elsevier]

Abstract: The Pd plating on the 20μm Cu wire dissolves in the free air ball (FAB) and the Cu ball bond during the wire bonding process without forming intermetallic compounds. The limiting supply of Pd and the short bonding process, 15ms of thermosonic bonding, result in uneven distribution of Pd in the as produced Cu ball bond. Also, the Pd-rich phase may accompany small voids formed within the FAB and the wire bond, and following the direction of semi-solid Cu flow. The Pd distribution, as evidenced by the focused ion beam (FIB) and wavelength dispersive X-ray spectroscopy (WDS) mapping, reveals the whirlpool flow pattern of Cu within the FAB and the ball bond. Pd distributes within the copper ball through convective transport by the copper flow. Additionally, hardness measurements by nanoindentation testing show that the Cu ball bond is harder in the regions where Pd exists. [Copyright &y& Elsevier]

Manipulation of electron beam irradiation using TEM determines the selective region with a particular size and depth to conduct the subsequent process for nanopore formation. • Recording the effect of e-beam irradiation on Mo 5 O 14 nanowires by in situ TEM. • Manipulating e-beam to define the anticipated region and the size of nanoporosity. • Atom removal and crystallinity degradation resulting in structural transformation. • The formation of nanopores due to the numerous broken bonds in crystalline Mo 5 O 14. • Revealing the mechanism of selective nanopore formation in nanoscale modification. The Mo 5 O 14 -type structure is representative of the MoO-based catalyst in the selective oxidation process. Single-crystalline Mo 5 O 14 nanowires can be synthesized in a controlled manner by chemical vapor deposition (CVD). A nanowire catalyst with a porous structure combines the advantages of both nanoparticles and nanowires, leading to a substantial increase in the specific surface area. Therefore, we aim to manipulate the e-beam irradiation process on Mo 5 O 14 nanowires to induce the nanoporous structures in selected regions. In situ transmission electron microscopy (TEM) enabled us to visualize the structural transformation through gradual e-beam irradiation. The e-beam irradiation process removes oxygen atoms and renders the internal structure unstable. After the irradiated region is exposed to air, atoms tend to escape to decrease the internal energy. This results in the formation of nanopores because of the irradiation effect. By nanoscale modification method, the irradiated region is controlled by the electron beam size, which determines the nanopore distribution in the selected region. The study is beneficial for increasing the surface area of Mo 5 O 14 -type catalysts with variable nanopore densities and for modifying nanomaterials using a convenient method. [ABSTRACT FROM AUTHOR]

The atomic scale Silicidation of Ni-Si System by In-situ TEM Investigation could be divide into three steps. At the first step (250 °C), Ni would diffuse into Si substrate to synthesize triangular Ni 2 Si. Afterwards, continuous NiSi thin films would be synthesized at 400 °C. At last, trapezoid NiSi would react with Si to form NiSi 2 at third step (600 °C). Furthermore, the electric electrical properties of Ni-Si system were identified by four-point probe measurements; the resistivities of NiSi, Ni 2 Si and NiSi 2 were 14.13 µΩ∙cm, 22.80 µΩ∙cm and 37.77 µΩ∙cm, respectively. • The diffusion behaviour of Ni-Si system was investigated through in situ HRTEM. • Ni 2 Si and NiSi were diffusion controlled and NiSi 2 was nucleation controlled. • The resistivities of NiSi, Ni 2 Si and NiSi 2 were 14.1, 22.8, and 37.7 µΩ∙cm, respectively. • The diffusion rate could be calculated by in-situ TEM observation. • This work provides a novel method to obtain low resistivity silicide for IC devices. Nickel silicide has many advantages, such as low resistivity and low formation temperature; therefore, it has been widely used in the fields of solar cells, transistors and complementary metal-oxidesemiconductor (CMOS) devices. To obtain high-quality nickel-silicide thin film, solid-state reaction is a convenient and efficient fabrication method. For better understanding of the dynamic formation mechanism, we used in-situ transmission electron microscopy (TEM) to record the diffusion behavior during the heating process. In this work, three-steps annealing process to synthesize different nickel silicides corresponding to the various formation temperatures were investigated systematically. At 250 °C, the product of the first-step annealing was inverted-triangle Ni 2 Si, embedded in the Si substrate. Then, well-distributed NiSi thin film was synthesized, having the lowest resistivity among Ni-Si system at 400 °C. Finally, NiSi 2 , a Si-rich product, would form during the third-step annealing at 600 °C. NiSi 2 product and Si substrate have small lattice mismatch; thus, the epitaxial relationship would be observed. We provide the evidence of diffusion behaviors and structural identification of Ni-Si system. Furthermore, these results are beneficial for the formation of specific nickel silicides, which is expected to optimize the fabrication of microelectronics. [ABSTRACT FROM AUTHOR]

Abstract Transition metal silicide nanowires exhibit low resistivity, great thermal stability and excellent mechanical strength, contributing to their applications as interconnection and contact materials for future integrated circuits devices. In this work, we successfully fabricated two kinds of chromium silicide/silicon heterostructure nanowires through solid state reactions — bare Si/Cr 3 Si nanowires and Si/Cr 5 Si 3 -Al 2 O 3 core-shell nanowires. The growth behaviors and diffusion mechanisms of the two silicide heterostructure nanowires were investigated with in-situ TEM at 700 °C. During the growth of chromium silicide nanowires, unique amorphous Si phase would form first in front of silicide nanowires. Also, we found that oxide-shell could control the diffusion process in silicon nanowires. With oxide-shell, compression stress would restrain the growth of chromium silicide in the radial direction but accelerate its growth rate in the axial direction. Additionally, Al 2 O 3 shell reduced the radial expansion of chromium silicide nanowires and hindered Cr-rich phases with Cr 5 Si 3 appearing as the first phase. The crystal structures of the nanowires have been identified to be single-crystalline A15 and D8m type structure of the intrinsic Cr 3 Si nanowires and Cr 5 Si 3 nanowires, respectively. In addition to fundamental science, the significant study is beneficial for future processing techniques in nanotechnology and related applications. Graphical abstract With in-situ transmission electron microscopy (TEM), we successfully transformed single crystalline Si nanowires to chromium silicide/Si nanowire heterostructures. Also, during the solid state phase transformation process, we observed unique structures at the interface, demonstrated to be amorphous Si phase after Si Si bond breaking, which led the chromium silicide nanowire growth by interface-reaction control. Unlabelled Image Highlights • We utilized solid state reactions to fabricate controllable and unique Cr 3 Si/Si and Cr 5 Si/Si nanowire heterostructures. • With in-situ transmission electron microscopy (TEM), we observed a special interfacial reaction during the silicidation. • The design of Si-Al 2 O 3 core-shell effectively improved the morphology and crystallinity of the nanowire heterostructures. • We used distinctive methods and results to systematically investigate the kinetics of the nanowire heterostructures. [ABSTRACT FROM AUTHOR]

In this paper, we report the synthesis of iron silicide and β-iron disilicide nanowires with chemical vapor deposition; remarkably, the latter has drawn much attention but has seldom been achieved. We also propose the formation mechanisms for the two phases. To investigate the effects of the growth parameters on compositions and morphologies of the iron silicide nanowires, we changed and studied the reaction time, substrate temperature, position of samples, and pressure. The reaction concentration was found to be altered by all of the parameters; thus, we observed different nanowires in terms of morphologies and compositions with scanning electron microscopy. To confirm the growth direction and crystal structure of the nanowires, we conducted x-ray diffraction and high-resolution transmission electron microscopy studies. With the potential of being utilized as circuit elements in electronic devices for Schottky barriers, ohmic contacts, and interconnection among silicon-based transistors, the silicide work at nanoscale is beneficial for nanoelectronics. Understanding the effects of these growth parameters facilitates the control of nanowire growth with better quality. [ABSTRACT FROM AUTHOR]