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Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity.
- Source :
-
Nanomaterials (2079-4991) . Nov2020, Vol. 10 Issue 11, p2100-2100. 1p. - Publication Year :
- 2020
-
Abstract
- In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10−4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 10
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Nanomaterials (2079-4991)
- Publication Type :
- Academic Journal
- Accession number :
- 147204874
- Full Text :
- https://doi.org/10.3390/nano10112100