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Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul quantum-secured communication. However, efficient coupling with optical fibers is crucial for these single photons to be effective carriers in long-distance transmission. In this work, we demonstrate an efficient fiber-coupled single photon source at the telecom C-band using InAs/InP quantum dots coupled to a tapered nanobeam. The tapered nanobeam structure facilitates directional emission that is mode-matched to a lensed fiber, resulting in a collection efficiency of up to 65% from the nanobeam to a single-mode fiber. Using this approach, we demonstrate single photon count rates of 575 $\pm$ 5 Kcps and a single photon purity of $g^2$ (0) = 0.015 $\pm$ 0.003. Additionally, we demonstrate Hong-Ou Mandel interference from the emitted photons with a visibility of 0.84 $\pm$ 0.06. From these measurements, we determine a photon coherence time of 450 $\pm$ 20 ps, a factor of just 8.3 away from the lifetime limit. This work represents an important step towards the development of telecom C-band single-photon sources emitting bright, pure, and indistinguishable photons, which are necessary to realize fiber-based long-distance quantum networks

Halide perovskite semiconductors have emerged as promising materials for the development of solution-processed, scalable, high performance optoelectronic devices such as light-emitting diodes (LEDs) as well as coherent single photon emitters. Their integration to nanophotonic cavities for radiative enhancement and strong nonlinearity is underexplored. In this work, we demonstrate cavity-enhanced emission and saturable absorption using colloidal CsPbBr$_3$ perovskite quantum dots coupled to a high-Q cavity mode of a circular Bragg grating structure designed to facilitate integration of solution-processed materials . We achieve an order of magnitude increase in brightness and 8-fold increase in the spontaneous emission rate for the cavity-coupled emitters. This result indicates the possibility of achieving transform-limited photon coherence for the halide perovskites at cryogenic temperatures. We also observe saturable absorption of the emitters through intensity-dependent cavity quality factor. These results pave the way towards achieving improved photon indistinguishability and strong optical nonlinearities for cavity coupled perovskite systems., Comment: 10 pages, 4 figures

Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency crucial features for various low-power photonic applications and quantum information processing. However, despite their potential, nanobeam cavities often suffer from low quality factors due to fabrication imperfections that create surface states and optical absorption. In this work, we demonstrate InP nanobeam cavities with up to 140% higher quality factors by applying a coating of Al$_2$O$_3$ via atomic layer deposition to terminate dangling bonds and reduce surface absorption. Additionally, changing the deposition thickness allows precise tuning of the cavity mode wavelength without compromising the quality factor. This Al$_2$O$_3$ atomic layer deposition approach holds great promise for optimizing nanobeam cavities that are well-suited for integration with a wide range of photonic applications.

A future quantum internet is expected to generate, distribute, store and process quantum bits (qubits) over the globe by linking different quantum nodes via quantum states of light. To facilitate the long-haul operations, quantum repeaters, the building blocks for a long-distance quantum network, have to be operated in the telecom wavelengths to take advantage of both the low-loss fiber network and the well-established technologies for optical communications. Semiconductors quantum dots (QDs) so far have exhibited exceptional performances as key elements, i.e., quantum light sources and spin-photon interfaces, for quantum repeaters, but only in the near-infrared (NIR) regime. Therefore, the development of high-performance telecom-band QD devices is highly desirable for a future solid-state quantum internet based on fiber networks. In this review, we present the physics and the technological developments towards epitaxial QD devices emitting at the telecom O- and C-bands for quantum networks by using advanced epitaxial growth for direct telecom emission, and quantum frequency conversion (QFC) for telecom-band down-conversion. We also discuss the challenges and opportunities in the future to realize telecom QD devices with improved performances and expanded functionalities by taking advantage of hybrid integrations., Comment: Final version to appear in Nature Nano

Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a two-orders of magnitude increase in brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way towards efficient spin-photon interfaces in silicon photonics., Comment: References updated

Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a spin ground state that has long coherence times. But this color center exhibits a long excited state lifetime which results in a low photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to collect over 70% of the T center emission directly into a single mode fiber. This efficiency enables us to directly demonstrate single photon emission from the zero phonon line, which represents the coherent emission from the T center. Our results represent an important step towards silicon-integrated spin-photon interfaces for quantum computing and quantum networks., Comment: 9 pages, 4 figures

Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries., Comment: 9 pages, 4 figures

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V devices, but it is still unclear how to engineer these modes to make photonic crystal cavities. Herein, using 3D finite-difference time-domain simulation, a hybrid Si-GaAs photonic crystal cavity design enables cavity mode confinement in GaAs without directly patterning that operates at telecom wavelengths. The hybrid cavity consists of a patterned silicon waveguide nanobeam that is evanescently coupled to a GaAs slab with quantum dots. We show that by engineering the hybrid modes, we can control the degree of coupling to the active material, which leads to a tradeoff between cavity quality factor and optical gain and nonlinearity. With this design, we demonstrate a cavity mode in the Si-GaAs heterogeneous region, which enables strong interaction with the quantum dots in the GaAs slab for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 ${\mu}$W, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms.

Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $\mu$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control., Comment: 12 pages, 10 figures. Minor updates to notation

We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2\pi) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $\alpha=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~\Omega$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems., Comment: Accepted manuscript

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~\mu s$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results open for the possibility of using Si CMOS quantum dots as a tuneable platform for studying high-spin systems., Comment: 7 pages, 3 figures

Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients to generate a pure spin supercurrent channel in Nb. Here, by substituting Pt for a perpendicularly magnetized Pt/Co/Pt spin-sink, we are able to demonstrate the role of SOC, and show that pure spin supercurrent pumping efficiency across Nb is tunable by controlling the magnetization direction of Co. By inserting a Cu spacer with weak SOC between Nb and Pt/(Co/Pt) spin-sink, we also prove that Rashba type SOC is key for forming and transmitting pure spin supercurrents across Nb. Finally, by engineering these properties within a single multilayer structure, we demonstrate a prototype superconducting spin-wave (SW) device in which lateral SW propagation is gateable via the opening or closing of a vertical pure spin supercurrent channel in Nb., Comment: 28 pages, 4 figures

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emitted single photons to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

Recent experiments on strongly coupled microwave and ferromagnetic resonance modes have focused on large volume bulk crystals such as yttrium iron garnet, typically of millimeter-scale dimensions. We extend these experiments to lower volumes of magnetic material by exploiting low-impedance lumped-element microwave resonators. The low impedance equates to a smaller magnetic mode volume, which allows us to couple to a smaller number of spins in the ferromagnet. Compared to previous experiments, we reduce the number of participating spins by two orders of magnitude, while maintaining the strength of the coupling rate. Strongly coupled devices with small volumes of magnetic material may allow the use of spin orbit torques, which require high current densities incompatible with existing structures.

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $\mu$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $\mu$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.