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Large dispersive interaction between a CMOS double quantum dot and microwave photons
- Source :
- PRX Quantum 2, 020315 (2021)
- Publication Year :
- 2020
-
Abstract
- We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2\pi) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $\alpha=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~\Omega$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.<br />Comment: Accepted manuscript
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- PRX Quantum 2, 020315 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2004.00334
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PRXQuantum.2.020315