27 results on '"Lagahe-Blanchard, C."'
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2. Silicon-on-insulator by the Smart Cut™ Process
3. Investigation of a sequential three-dimensional process for back-illuminated CMOS image sensors with miniaturized pixels
4. III-V/Si photonics by die-to-wafer bonding
5. Smart Cut Technology: The Path for Advanced SOI Substrates
6. Silicon-on-insulator by the Smart Cut™ Process
7. Strain characterization of strained silicon on insulator wafers
8. Strained Silicon on Insulator wafers made by the Smart Cut™ technology
9. Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology
10. Mechanism of Edge Bonding Void Formation in Hydrophilic Direct Wafer Bonding
11. Distortion Free Wafer Bonding Technology for Backside Illumination Image Sensors
12. Strain reduction in Silicon-on-Sapphire by wafer bonding
13. Wafer stacking: key technology for 3D integration
14. New manufacturing method for capacitive ultrasonic transducers with monocrystalline membrane
15. New Manufacturing Method For Capacitive Ultrasonic Transducers With Monocrystalline Membrane
16. IC's Performance Improvement and 3D Integration by Layer Transfer Technologies
17. Strained Silicon On Insulator wafers made by the Smart Cut™ technology
18. New manufacturing method for capacitive ultrasonic transducers with monocrystalline membrane.
19. New Manufacturing Method For Capacitive Ultrasonic Transducers With Monocrystalline Membrane.
20. Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology.
21. Strained Silicon on Insulator wafers made by the Smart Cut™ technology.
22. Systematic study of the splitting kinetic of H/He co-implanted substrate.
23. Smart Cut/spl trade/ transfer of 300 mm [110] and (100) Si layers for hybrid orientation technology
24. Transfer of patterned Si and SiO/sub 2/ layers for the fabrication of patterned and mixed SOI
25. Strain reduction in Silicon-on-Sapphire by wafer bonding.
26. Transfer of patterned Si and SiO2 layers for the fabrication of patterned and mixed SOI.
27. Smart Cut™ transfer of 300 mm [110] and (100) Si layers for hybrid orientation technology.
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