647 results on '"La Via, F."'
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2. Partially depleted operation of 250 μm-thick silicon carbide neutron detectors
3. Advanced approach of bulk (111) 3C-SiC epitaxial growth
4. On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
5. Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay
6. NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay
7. Simulation of the growth kinetics in group IV compound semiconductors
8. 3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer
9. Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
10. Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
11. The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay
12. Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
13. Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars
14. Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons
15. Partially depleted operation of 250 μm-thick silicon carbide neutron detectors
16. Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing.
17. New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds
18. 3C-SiC grown on Si by using a Si1-xGex buffer layer
19. Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations
20. Advanced approach of bulk (111) 3C-SiC epitaxial growth
21. Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
22. Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
23. Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures
24. Carbonization and transition layer effects on 3C-SiC film residual stress
25. Impact of doping on the stress evaluation of Si/3C-SiC hetero-epitaxy
26. Effect of stress and different crystal orientations on 3C-SiC resonator
27. Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
28. Study of the role of particle-particle dipole interaction in dielectrophoretic devices for biomarkers identification
29. Performance of a thick 250 μm silicon carbide detector: stability and energy resolution
30. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications
31. Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
32. High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy
33. New approaches and understandings in the growth of cubic silicon carbide
34. Detector response to d-d neutrons and stability measurements with 4h silicon carbide detectors
35. Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries
36. Silicon Carbide devices for radiation detection and measurements
37. Large area optical characterization of 3 and 4 inches 4H–SiC wafers
38. Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy
39. Morphology and distribution of carbon nanostructures in a deposit produced by arc discharge in liquid nitrogen
40. Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
41. X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers
42. Silicon carbide for future intense luminosity nuclear physics investigations
43. High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
44. Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC
45. Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
46. High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
47. Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications
48. Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations
49. 4H-SiC epitaxial layer growth by trichlorosilane (TCS)
50. Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
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