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Objective We focus on providing the first comprehensive national dataset on the incidence, injury aetiology and mortality of TSCI in China. Methods A multi-stage stratified cluster sampling method was used. We included TSCI cases from all hospitals in three regions, nine provinces and 27 cities in China via search of electronic medical records and retrospectively analysed the characteristics of TSCI in China from 2009 to 2018. We estimated the incidence of TSCI in the total population and subgroups. Results There were 5954 actual cases in 2009, corresponding to a total estimated TSCI incidence of 45.1 cases per million population (95% CI, 44.0–46.3). There were 10,074 actual cases in 2018, corresponding to a total estimated TSCI incidence of 66.5 cases per million population (95% CI, 65.2–67.8) (P P Conclusions The TSCI incidence increased significantly from 2009 to 2018. The incidence in the elderly populations was consistently high and continues to increase over time. The mortality of TSCI patients in hospitals is relatively low and continues to decrease each year, but elderly individuals remain at a high risk of hospital death.

Study Design. A hospital-based retrospective epidemiological study.Summary of Background Data. TSCI is a highly disabling and deadly injury. Currently, there is little information regarding the epidemiological characteristics for TSCI in Shaanxi.Objective: To describe the demographic and epidemiological characteristics of patients with traumatic spinal cord injury (TSCI) in Shaanxi to help health-related institutions formulate corresponding measures.Methods. We retrospectively reviewed the medical records of the spine centers or orthopedic centers of the four cities in Shaanxi province according to the International Classification of Disease Version 10 (ICD-10) and diagnostic code of TSCI. Variables included gender, age, medical insurance, etiology, occupation, time of injury, level of injury, and severity of injury, multiple injury, treatment, and so on.Results: The study included the medical records of 694 patients with TSCI in 2018. The mean age of patients with TSCI was 48.4±14.9 years, and the male/female ratio was 3.45:1. The major causes of TSCI were high falls (40.2%) and low falls (26.7%). The most common injury site was the cervical spinal cord, accounting for 48.7%. The highest proportion of severity of injury was ASIA Grade D (37.8%). In addition, 74.6% of the patients had spinal fractures, the chest (38.0%) accounted for the highest proportion of all TSCI patients. Furthermore, 27.8% of the patients experienced clinical complications. 530 (76.4%) patients underwent surgery, 323 (46.5%) patients underwent inpatient rehabilitation.Conclusion: There are specific epidemiological characteristics of TSCI patients in Shaanxi, and preventive measures are suggested to be based on the characteristics of the different types of patients with TSCI and focused on high-risk groups.Level of Evidence: 3

Objective To explore the safety and efficacy of hydrogen peroxide H2O2 in controlling blood loss and surgical site infection (SSI) after multisegmental lumbar spine surgery. Methods A total of 2626 patients who had undergone multisegmental lumbar spinal surgery from January 2015 to January 2018 were included in the present study. Stratified by the use of H2O2 irrigation, they were divided into 2 groups: the control group (n = 1345) and the experimental group (n = 1281). The demographic parameters, laboratory examination results, and surgery-related information (e.g., operative time, number of operated levels, intraoperative blood loss, postoperative drainage, postoperative SSI, extubation time), and perioperative complications were recorded. Results No significant differences were seen regarding the demographic parameters, laboratory examination results, comorbidities, and surgery-related information. The extubation time and postoperative drainage collection were lower in the experimental group (3.6 ± 0.5 vs. 4.1 ± 0.6 days, P = 0.402; 251.8 ± 67.5 vs. 291.8 ± 71.3 mL, P = 0.013). In the control group, the rate of SSI was 2.4% (32 of 1345) and included 17 superficial wound infections and 15 deep wound infections. In the experimental group, the SSI rate was 1.4% (18 of 1281; 15 with a superficial wound infection and 3 with a deep wound infection). Staphylococcus aureus was the most common organism, especially in the experimental group (66.7% vs. 50%). No statistically significant difference was found between the 2 groups in the perioperative complications, including hematencephalon, deep vein thrombosis, pulmonary embolism, and myocardial infarction (P > 0.05). Pneumocephalus was not observed in either group. Conclusion The application of H2O2 in posterior lumbar interbody fusion can reduce the blood loss and incidence of SSI after surgery and was quite beneficial for controlling the increasing number of vancomycin-resistant bacteria.

strongBACKGROUND/strongSince C2 is adjacent to important nerves and blood vessels, the implantation risk of C2 internal fixation in this area is high and requires high accuracy. This study mainly discussed the application value of 3-dimensional (3D)-printed navigation template in C2 screw placement.strongMATERIAL AND METHODS/strongA retrospective study compared 3D-printed navigation template-assisted screw placement (group A, n=32) and the C-arm based navigation-assisted screw placement group (group B, n=32). Group A was divided into 2 subgroups: A1 (C2 pedicle screw placement) and A2 (C2 pars screw placement); group B was divided into B1 (C2 pedicle screw placement) and B2 (C2 pars screw placement). The accuracy and safety of screw placement and clinical outcomes were evaluated.strongRESULTS/strongThere were 64 C2 screws placed in group A, and 95.31% achieved a grade A accuracy rating, including 52 screws in group A1 (96.15% grade A) and 12 screws in group A2 (91.67% grade A). A total of 64 C2 screws were placed in group B, and 84.38% achieved a grade A accuracy rating, including 50 screws in group B1 (84.00% grade A) and 14 screws in group B2 (85.71% grade A). The accuracy of screw placement differed significantly between groups A and B (iP/i=0.041) and between groups A1 and B1 (iP/i=0.039) but not between groups A2 and B2 (iP/i=0.636). The postoperative efficacy of the 2 groups was satisfactory. And there were no complications of blood vessels or nerves related to screw placement in either group.strongCONCLUSIONS/strongAlthough 3D-printed navigation template-assisted and C-arm based navigation-assisted C2 pedicle and pars screw placement provided similar safety and clinical efficacy, 3D-printed navigation template technology achieved more accurate C2 pedicle screw placement.

Cache-type phase-change random-access memory is a remaining challenge on the path to universal memory. The recently designed Sc0.2Sb2Te3 (SST) alloy is one of the most promising phase-change materi...

Getting more bits out of PCRAM Phase-change random access memory (PCRAM) has the ability to both store and process information. It also suffers from noise and electrical drift due to damage that accumulates during the cycling process. Ding et al. developed a phase-change heterostructure where a phase-change material is separated by a confinement material, creating an alternating stack (see the Perspective by Gholipour). This architecture results in ultralow noise, lower drift, and stable multilevel storage capacity, which are potentially useful for new forms of computing. Science , this issue p. 210 ; see also p. 186

The COVID-19 pandemic has led to thinking about the response to sudden-onset disasters, for which the transportation resilience of urban areas is crucial. The purpose of paper is to provide a graded assessment of urban transportation resilience to help city managers target policies and plans. Wuhan, the first city in China to be severely hit by COVID-19, was selected as the case study for this research. Based on an extensive survey of the travel characteristics of residents in central urban areas, the concept of “travel mode shift” was combined to classify residents into four modes, including non-motorized conventional travel, non-motorized over-distance travel, motorized adaptable travel and motorized non-substitutable travel. The potential transportation stoppages in different levels of epidemic impact were then divided into three scenarios, corresponding to each of the city’s three levels of transportation resilience. The concept of MWD (Maximum Willingness Distance) in active travel mode was further developed, which was divided into WMWD (Walking Maximum Willingness Distance) and RMWD (Riding Maximum Willingness Distance). Finally, a hierarchical assessment model of urban transportation resilience is developed based on the MWD distance threshold. Besides, the average income level of urban residents was also included in the assessment system. The following research conclusions were drawn: (1) The degree of transportation resilience in Wuhan showed an “S-curve” relationship with RMWD, with thresholds at RMWD = 2.5 km, 11 km and 23 km respectively. (2) The resilience of transportation in the suburbs of the city was weaker than in the city center, and the gap between the two increases as the RMWD increases, but the share of motorized transportation in short distance trips in the city center was still higher than desirable. (3) The upper-income groups in the city had more flexible travel options, while the lower income groups were less resilient to travel. Based on the results of the study, it is recommended that city managers can identify areas of low resilience and critical distance thresholds that may lead to sudden changes in transportation resilience in the event of a sudden disaster. This will lead to the development of improved policies. The special needs of socially disadvantaged groups should also be taken more into account in this process.

The contradictory nature of increasing the crystallization speed while extending the amorphous stability for phase-change materials (PCMs) has long been the bottleneck in pursuing ultrafast yet persistent phase-change random-access memory. Scandium antimony telluride alloy (ScxSb2Te3) represents a feasible route to resolve this issue, as it allows a subnanosecond SET speed but years of reliable retention of the RESET state. To achieve the best device performances, the optimal composition and its underlying working mechanism need to be unraveled. Here, by tuning the doping dose of Sc, we demonstrate that Sc0.3Sb2Te3 has the fastest crystallization speed and fairly improved data nonvolatility. The simultaneous improvement in such ‘conflicting’ features stems from reconciling two dynamics factors. First, promoting heterogeneous nucleation at elevated temperatures requires a higher Sc dose to stabilize more precursors, which also helps suppress atomic diffusion near ambient temperatures to ensure a rather stable amorphous phase. Second, however, enlarging the kinetic contrast through a fragile-to-strong crossover in the supercooled liquid regime should require a moderate Sc content; otherwise, the atomic mobility for crystal growth at elevated temperatures will be considerably suppressed. Our work thus reveals the recipe by tailoring the crystallization kinetics to design superior PCMs for the development of high-performance phase-change working memory technology. Optimizing the composition of an alloy provides a route to ultrafast and stable non-magnetic electronic memories according to research from China. The atoms in many materials can stably exist in either an organized crystalline or a disorganized amorphous arrangement. Phase-change materials, which quickly and reversibly switch between the two states, are being developed as digital memories: small regions of the material are encoded in crystalline or amorphous states just as ones and zeros are stored in a magnetic memory. Feng Rao from Shenzhen University and co-workers developed an approach for creating phase-change memory materials that change phase quickly and retain a phase for a long time. The team identified the optimum scandium content in the alloy scandium antimony telluride and showed that this led to faster crystallization and improved data stability. In this work, we reveal the recipe for the design of superior phase-change materials to enable ultrafast and persistent memory application.

Ultrafast programming speed and superb data persistency are two contradictory characteristics that need to be reconciled in the development of non-volatile cache-type phase-change random access memory (PCRAM). Scaling down the dimension of PCRAM unit cell is expected to be a feasible approach to solve this issue. Here we employ a bridge-type device using a 4 nm-thick Sb2Te3 film to test this hypothesis. Thermal stability of the amorphous thin Sb2Te3 film is evidently enhanced with respect to the bulky ones. The phase-change bridge device also enables the fastest crystallization speed of 1 ns. Such swift crystallization should be mainly ascribed to the enhanced heterogeneous nucleation at interfaces. Yet the aggressive geometry shrinkage may induce severe retardation in crystal growth. Tuning these two crystallization kinetic factors needs to be considered in future design of ultrafast and persistent phase-change materials for high-density PCRAM application.

Fast phase change with no preconditions Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed. This is an order of magnitude faster than previous phase-change memory devices and competitive with consumer dynamic access, static random access, and flash memory. Science , this issue p. 1423 ; see also p. 1386

Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduced the heat dissipation through upper electrode, increasing the energy efficiency of PCM, reducing the power consumption. The element distribution in PCM cell after 3 × 10 5 cycles proved that the carbon layer has successfully prevented atoms diffusion. After carbon layer being applied, the local high temperature during RESET in phase change material has been lowered. Hence, the higher viscosity at lower temperature has reduced atomic migration, beneficial to a good endurance.

OBJECTIVE: To compare the effectiveness and screw planting accuracy of percutaneous reduction and internal fixation with robot and traditional fluoroscopy-assisted in the treatment of single-level thoracolumbar fractures without neurological symptoms. METHODS: The clinical data of 58 patients with single-level thoracolumbar fractures without neurological symptoms between December 2016 and January 2018 were retrospectively analysed. According to different surgical methods, the patients were divided into group A (28 cases underwent robot-assisted percutaneous reduction and internal fixation) and group B (30 cases underwent fluoroscopy-assisted percutaneous reduction and internal fixation). There was no neurological symptoms, other fractures or organ injuries in the two groups. There was no significant difference in general data of age, gender, fracture location, AO classification, time from injury to surgery, and preoperative vertebral anterior height ratio, sagittal Cobb angle, visual analogue scale (VAS) score, and Oswestry disability index (ODI) score between the two groups (P>0.05). The screw placement time, operation time, intraoperative blood loss, intraoperative fluoroscopy frequency, hospitalization time, operation cost, postoperative complications, VAS score, ODI score, anterior vertebral height ratio, and sagittal Cobb angle before operation, at 3 days, 6 months after operation, and at last follow-up were recorded and compared between the two groups. The accuracy of the pedicle screw placement was evaluated by Neo’s criteria. RESULTS: The screw placement time, operation time, and intraoperative fluoroscopy frequency of group A were significantly less than those of group B, and the operation cost was significantly higher than that of group B (P0.05). Both groups were followed up 12-24 months, with an average of 15.2 months. The accuracy rate of screw placement in groups A and B was 93.75% (150/160) and 84.71% (144/170), respectively, and the difference was significant (χ(2)=5.820, P=0.008). Except for 1 case of postoperative superficial infection in group A and wound healing after dressing change, there was no complication such as neurovascular injury, screw loosening and fracture in both groups, and there was no significant difference in the incidence of complications between the two groups (χ(2)=0.625, P=0.547). The anterior vertebral height ratio, sagittal Cobb angle, VAS score, and ODI score of the two groups were significantly improved (P0.05). CONCLUSION: The spinal robot and traditional fluoroscopy-assisted percutaneous reduction and internal fixation can both achieve satisfactory effectiveness in the treatment of single-level thoracolumbar fractures without neurological symptoms. However, the former has higher accuracy, fewer fluoroscopy times, shorter time of screw placement, and lower technical requirements for the operator. It has wide application potential.

W doping is proposed to reduce the grain size of Sb2Te3. The grain size of W0.08(Sb2Te3)0.92 is about 5 nm, which is smaller than that of Sb2Te3 (∼80 nm) under the same annealing condition. The phase change memory based on W0.08(Sb2Te3)0.92 material shows 10 ns operation speed, 6 ns Set operation speed, and 1.3 × 105 reversible phase change ability. Through experimental and theoretical investigation, the W atoms are suggested to be located at the Sb positions, and bind with the Te atoms. The stronger W Te bonds induce the small grain size of W0.08(Sb2Te3)0.92, leading to high speed phase change ability.

Although phase change memory technology has developed drastically in the past two decades, the cognition of the key switching materials still ignores an important member, the face-centered cubic Sb2Te3. Apart from the well-known equilibrium hexagonal Sb2Te3 crystal, we prove the metastable face-centered cubic Sb2Te3 phase does exist. Such a metastable crystal contains a large concentration of vacancies randomly occupying the cationic lattice sites. The face-centered cubic to hexagonal phase transformation of Sb2Te3, accompanied by vacancy aggregation, occurs at a quite lower temperature compared to that of Ge2Sb2Te5 alloy. We prove that the covalent-like bonds prevail in the metastable Sb2Te3 crystal, deviating from the ideal resonant features. If a proper doping technique is adopted, the metastable Sb2Te3 phase could be promising for realizing reversibly swift and low-energy phase change memory applications. Our study may offer a new insight into commercialized Ge–Sb–Te systems and help in the design of novel phase change materials to boost the performances of the phase change memory device.

Phase-change random-access memory (PCRAM) is the leading candidate to overcome the intrinsic bottleneck in current von Neumann architecture by unifying computing with storage, enabling its prospect as cognitive memory. However, strong resistance drift in current Ge2Sb2Te5-based PCRAM devices obstructs the accomplishment of high-accuracy computing tasks that require stable multi-state programming. Moreover, the implementation of synaptic depression still remains highly challenging for current PCRAM devices due to the abrupt amorphization nature. We employed 4 nm-thick monatomic antimony (Sb) film to achieve reliable iterative RESET and cumulative SET operations simultaneously, with considerably lowered resistance drift and programming noise. The 2D Sb-based device is also capable of performing progressive RESET operations. Our work thus demonstrates the potential of monatomic 2D PCRAM for the future development of high-performance neuromorphic computing chips.

Growth Arrest Specific 5 (GAS5), a long noncoding RNA (lncRNA), functions as a tumor suppressor in multiple cancers. However, its function, downstream targets and upstream regulatory mechanism are still obscure in osteosarcoma cells. Here, we discovered that GAS5 was downregulated in cancerous osteosarcoma tissues and cells. Using a microarray analysis, we identified that GAS5 can regulate the expression of TP53, Bax, Bim, DDB2, TGFB and ROS1 in osteosarcoma cells. Specifically, GAS5 overexpression in the U2OS osteosarcoma cell line induced TP53, Bax and Bim levels but inhibited DDB2, TGFB and ROS1 expression, resulting in the inhibition of cell proliferation, invasion, colony formation and in vivo tumor formation. By analyzing the GAS5 promoter region (-2000), we identified several potential transcription factor-binding sites including NF-ĸB, IK-1, AP-1, SP1 and IRF1. By individually knocking down these transcription factors, we found that only knockdown of IRF1 affected GAS5 expression. Using immunoprecipitation (IP), mass spectrometry assays, and co-IP assays, we identified that IRF1 formed a transcriptional complex with Histone Deacetylase 1 and 2 (HDAC1/2) and C-terminal binding protein 1 (CtBP1). Functional analyses indicated that the CtBP1-HDAC1/2-IRF1 complex specifically bound to the GAS5 promoter and regulated its expression and downstream events. Knockdown of CtBP1 or overexpression of IRF1 in osteosarcoma cells can significantly reverse their oncogenic phenotypes. Altogether, our results indicated that the CtBP1-HDAC1/2-IRF1 transcriptional complex inhibited GAS5-mediated signaling in osteosarcoma cells, and it might be a potential therapeutic target for osteosarcoma treatment.

Background: China accounts for nearly one-fifth of the world's population. However, the national epidemiology of traumatic spinal cord injury (TSCI) is still unknown. Therefore, this study aimed to clarify the incidence and epidemiological characteristics of TSCI in China. Methods: We retrospectively reviewed the medical records of patients with spinal cord injury in hospitals and the ability to treat TSCI. TSCI was defined as the clinical manifestation of paraplegia or quadriplegia after trauma. We collected general data, causes of injury, level of injury, severity of injury, multiple injuries, complications and other data through the designed medical record questionnaire, and then performed an analysis according to geographical region, age and gender, and calculated the overall incidence of the whole country and each region. Findings: The study included medical records of 4,134 patients with a male to female ratio of 2·99:1. In 2018, the overall TSCI rate in China was 50·484 cases (95% CI: 50·122, 50·846) per one million persons, and the expected number of cases was 74,890. The highest incidence rate in the East was 53·791 (95% CI: 53·217, 54·365) cases per one million persons, and the expected number of cases was 33,724. The leading cause of injury was high falls (29·58%), the most common level of injury was cervical injury (64·49%). Regarding the severity of injury, the highest percentages of incomplete quadriplegia (55·20%). Interpretation: The estimated overall incidence of TSCI in China is similar to that of the United States. The leading cause of injury in different regions of China was determined. Preventive work should be carried out in a targeted manner. With the ageing population, there are more TSCIs in the elderly population due to low falls. Future public health policies need more strategies to prevent low falls and to widely publicize them. Funding Statement: This study was supported by the Key Program from the National Natural Science Funds (81830077); the General Program from the National Natural Science Funds (81772357);the National Natural Science Foundation of China; the Key Project from the Science and Technology Commission of Shaanxi (2017ZDXM-SF-054); the Department of Health, Shaanxi Province (2018E002); the Major Research from the Xi'an Science and Technology Department (2017123SF/YX017). Declaration of Interests: The authors declare that they have no conflicts of interest. Ethics Approval Statement: The Ethics Committee of Xi'an Honghui Hospital and the ethics committee of each participating centre approved the current study.

Cu 0.10 (Ge 2 Sb 2 Te 5 ) 0.90 is proposed for low power consumption phase change memory (PCM). The thermal stability of Ge 2 Sb 2 Te 5 is increased by 10 at% Cu doping, with the crystallization temperature and data retention increased from 163 °C to 202 °C and from 87 °C to 134 °C, respectively. The electric operation results have proved the low power consumption and good cycling ability (>10 4 ), which may result from the low melting point (486 °C) and the negligible phase separation in Cu 0.10 (Ge 2 Sb 2 Te 5 ) 0.90 . The good thermal stability, low T m and good cycling phase change ability have made Cu 0.10 (Ge 2 Sb 2 Te 5 ) 0.90 a promising candidate for the low power consumption PCM application.

Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti1Sb2Te5 alloy, compared with Ge2Sb2Te5 and non-stoichiometric Ti0.4Sb2Te3 based PCM cells at the same size, respectively. The Ti1Sb2Te5 based PCM cell also shows one order of magnitude faster SET operation speed compared to that of the Ge2Sb2Te5 based one. The enhancements may be caused by substantially increased concentration of TiTe2 nano-lamellae in crystalline Ti1Sb2Te5 phase. The highly electrical conduction and lowly thermal dissipation of the TiTe2 nano-lamellae play a major role in enhancing the thermal efficiency of the amorphization, prompting the low-energy RESET operation. Our work may inspire the interests to more thorough understanding and tailoring of the nature of the (TiTe2)n(Sb2Te3)m pseudobinary system which will be advantageous to realize high-speed and low-energy PCM applications.

Phase-change memory based on Ti0.4Sb2Te3 material has one order of magnitude faster Set speed and as low as one-fifth of the Reset energy compared with the conventional Ge2Sb2Te5 based device. However, the phase-transition mechanism of the Ti0.4Sb2Te3 material remains inconclusive due to the lack of direct experimental evidence. Here we report a direct atom-by-atom chemical identification of titanium-centered octahedra in crystalline Ti0.4Sb2Te3 material with a state-of-the-art atomic mapping technology. Further, by using soft X-ray absorption spectroscopy and density function theory simulations, we identify in amorphous Ti0.4Sb2Te3 the titanium atoms preferably maintain the octahedral configuration. Our work may pave the way to more thorough understanding and tailoring of the nature of the Ti–Sb–Te material, for promoting the development of dynamic random access memory-like phase-change memory as an emerging storage-class memory to reform current memory hierarchy., Ti-Sb-Te is a promising phase change memory material however its phase transition mechanism is poorly understood. Here, the authors use microscopic and spectroscopic techniques to show that titanium-centered octahedra play a major role in boosting the performance of Ti-Sb-Te based phase change memory.

Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based on ab initio simulations and nuclear magnetic resonance evidences. By comparing the local chemical environments around Al atoms in respective amorphous and crystalline Al-Sb-Te phases, we believe that Al-centered motifs undergo reversible tetrahedron-octahedron reconfigurations in phase transition process. Such Al-centered local structure rearrangements significantly enhance thermal stability of amorphous phase compared to that of undoped Sb-Te materials and facilitate a low-energy amorphization due to the weak links among Al-centered and Sb-centered octahedrons. Our studies may provide a useful reference to further understand the underlying physics and optimize performances of all IIIA metal doped Sb-Te phase change materials, prompting the development of NOR/NAND Flash-like phase change memory technology.

How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge2Sb2Te5 based PCM cell, inserting an additional graphene monolayer in the Ge2Sb2Te5 layer can remarkably decrease both the Reset current and energy. Because of the small out-of-plane electrical and thermal conductivities of such monolayer graphene, the Set resistance and the heat dissipation towards top TiN electrode of the modified PCM cell are significantly increased and decreased, respectively. The mushroom-typed larger active phase transition volume thus can be confined inside the underlying thinner GST layer, resulting in the lower power consumption.

N doping is proposed to enlarge sensing margin of W0.08(Sb2Te)0.92 based high-temperature phase-change memories (PCMs). The sensing margin is increased from 30 to 5 × 103, with an increase from 145 °C to 158 °C in data retention. The grain size is reduced to 10 nm. The PCM based on N-W0.08(Sb2Te)0.92 shows the fast operation speed of 30 ns and good cycling ability of >103. By X-ray photoelectron spectroscopy and ab initio calculation, the W atoms are suggested to locate in the Sb positions and interstices of the lattice. The W atoms in interstice will bond to N atoms during N doping.