Study on the nitrogen-doped W-Sb-Te material for phase change memory application.

N doping is proposed to enlarge sensing margin of W0.08(Sb2Te)0.92 based high-temperature phase-change memories (PCMs). The sensing margin is increased from 30 to 5×10³, with an increase from 145°C to 158°C in data retention. The grain size is reduced to 10nm. The PCM based on N-W0.08(Sb2Te)0.92 shows the fast operation speed of 30ns and good cycling ability of >10³. By X-ray photoelectron spectroscopy and ab initio calculation, the W atoms are suggested to locate in the Sb positions and interstices of the lattice. The W atoms in interstice will bond to N atoms during N doping. [ABSTRACT FROM AUTHOR]