Low-energy phase change memory with graphene confined layer.

How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge₂Sb₂Te₅ based PCM cell, inserting an additional graphene monolayer in the Ge₂Sb₂Te₅ layer can remarkably decrease both the Reset current and energy. Because of the small out-of-plane electrical and thermal conductivities of such monolayer graphene, the Set resistance and the heat dissipation towards top TiN electrode of the modified PCM cell are significantly increased and decreased, respectively. The mushroom-typed larger active phase transition volume thus can be confined inside the underlying thinner GST layer, resulting in the lower power consumption. [ABSTRACT FROM AUTHOR]