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The procedure of Fourier transform infrared absorption (FT-IR) at room temperature for quantifying C impurities in Si crystals was reexamined to improve the detection limit down to 5 × 1014 cmâˆ'3. Since the substitutional C absorption peak overlaps with a strong two-phonon absorption, the difference spectroscopy is necessary with using a C-lean reference sample. A baseline flatness of less than 0.0005 in absorbance and a thickness uniformity of less than 0.001 mm are required to realize a detection limit of 5 × 1014 cmâˆ'3 for 2 mm thick samples. To check the flatness, we define the Si/Si baseline which is the difference in the absorbance spectra measured twice with the removal and attachment of the same Si sample. Four organizations participated in the FT-IR round-robin test for ten samples with the C concentration ranging from 3.6 × 1014 to 3.3 × 1015 cmâˆ'3. The obtained C concentrations were almost within 30% deviation from the values determined by reliable secondary ion mass spectroscopy. [ABSTRACT FROM AUTHOR]

Reflection high-energy electron diffraction (RHEED) intensity oscillation during sublimation of GaAs is observed at high substrate temperatures above 690 °C. This post-growth RHEED intensity oscillation suggests that the sublimation occurs layer by layer. One period of this oscillation precisely corresponds to sublimation of one monolayer. Aluminum arsenide acts as a sublimation stopper. The sublimation rate was measured accurately as a function of substrate temperature. [ABSTRACT FROM AUTHOR]