Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system.

Reflection high-energy electron diffraction (RHEED) intensity oscillation during sublimation of GaAs is observed at high substrate temperatures above 690 °C. This post-growth RHEED intensity oscillation suggests that the sublimation occurs layer by layer. One period of this oscillation precisely corresponds to sublimation of one monolayer. Aluminum arsenide acts as a sublimation stopper. The sublimation rate was measured accurately as a function of substrate temperature. [ABSTRACT FROM AUTHOR]