145 results on '"Jacobson, D.C."'
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2. The precipitation of Fe at the Si-SiO2 interface
3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
4. Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors
5. Iron gettering mechanisms in silicon
6. Formation of extended defects in silicon by high energy implantation of B and P
7. Diffusion of depants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy
8. Implanted standards for detection of transition metal contamination of silicon surfaces
9. Erbium implantation in optical microcavities for controlled spontaneous emission
10. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the '+1' model
11. Boron-enhanced diffusion of boron from ultralow-energy boron implantation
12. Vacancy supersaturations produced by high-energy ion implantation
13. The mechanisms of iron gettering in silicon by boron ion-implantation
14. 1.5 mym photoluminescence of Er3+ in YF3, LuF3, and LaF3 thin films
15. Improvement of productivity by cluster ion implanter: CLARIS.
16. Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si
17. The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing
18. Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
19. Integrated W-silicide metal resistor for advanced CMOS technologies
20. 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics
21. Decaborane, an alternative approach to ultra low energy ion implantation.
22. Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence
23. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
24. Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon
25. The Structure of Ion-Implanted Amorphous Silicon
26. Damage and defects from low-energy implants in Si
27. Proximity gettering of Au to ion beam induced defects in silicon
28. High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology
29. Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon
30. The Physics and Application of Si:Er for Light Emitting Diodes
31. Annealing of defects created in silicon by MeV ion implantation
32. Applications of ion implantation in III–V device technology
33. Epitaxial growth versus nucleation in amorphous Si doped with Cu and Ag
34. Fluorine-Enhanced Si:Er Light Emission
35. Implantation induced changes in quantum well structures
36. Ic Compatible Processing of Si:Er for Optoelectronics
37. Controlled Atomic-like Spontaneous Emission from Implanted Erbium in a Si/SiO2 Microcavity
38. Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime
39. Diffusion of Gold in Amorphous Silicon
40. Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
41. The nature of keV and MeV ion damage in AlxGa1−xAs/GaAs and AlAs/GaAs heterostructures
42. EPR and RBS study of defects produced by MeV ion implantation into silicon
43. Modeling transient diffusion following high energy implantation.
44. Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions.
45. Modeling of ultra-low energy boron implantation in silicon.
46. Suppression of reverse short channel effect by a buried carbon layer.
47. Exploiting Si/CoSi2/Si heterostructures grown by mesotaxy
48. Photoluminescence and structural characterization of MeV erbium-implanted silica glass
49. Structural relaxation in amorphous silicon and the role of network defects
50. Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties
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