The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Research was conducted to examine the dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants into Si. An analysis of the role of the amorphization and damage in the evolution of dislocation microstructure was also carried out viva Rutherford backscattering spectroscopy and channeling. Results are compared to and correlated with the dose dependence of the density of threading dislocations formed i the samples after furnace annealing.