Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Authors :: Stolk, P.A.
Gossmann, H.-J.
Eaglesham, D.J.
Jacobson, D.C.
Rafferty, C.S.
Gilmer, G.H.
Jaraiz, M.
Poate, J.M.
Luftman, H.S.
Haynes, T.E.
Source :: Journal of Applied Physics. May 1, 1997, Vol. 81 Issue 9, p6031, 20 p.
Publication Year :: 1997

Subjects :: Ion implantation -- Research
Silicon -- Analysis
Semiconductor doping -- Research
Physics

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