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Presents a study which examined the implantation of MeV erbium ions into micron-thick silica and phosphosilicate glass films and silicon nitride films with the aim of incorporating the rare-earth dopant on an optically active site in the network. Photoluminescence spectrum showed in implanted films; Range of fluorescence lifetime for the silica-based glasses; Annealing characteristics of the materials.

Presents a study that investigated the segregation of [sup 73]germanium and [sup 75]arsenic in pulsed-laser-melted carbon. Experimental results; Description of model calculations; Results of calculations; Discussion.

Studies the characterization of gallium arsenide layers grown directly on silicon substrates by metalorganic chemical vapor deposition. Advantages of the heteroepitaxial growth of gallium arsenide on silicon substrates; Details on the experiment; Discussion on the results of the study.

Presents a study which developed a model for pulsed laser melting of graphite. Method of the study; Results and discussion; Conclusion.

Presents a study that examinee the pulsed laser and furnace annealing of nitrogen-implanted silicon. Comparison of the liquid and solid phase regrowth; Analysis of the diffusion of nitrogen; Investigation of the formation of nitride.

Discusses calorimetric studies of crystallization and relaxation of amorphous silicon and germanium prepared by ion implantation. Determination of the amorphous-crystal interface velocity; Interface velocity for crystallization on substrates; Advantages of ion implantation in the study of thermodynamics and kinetics of crystallization.

Studies the precipitation kinetics of Fe contamination at Si-Sio2 interfaces during dry oxidation at 900 degrees Celcius. Experimental procedure used; Definition of the surface and bulk Fe contamination; Results of the study.

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5 × 10[sup 12] to 1 &times 10[sup 14]/cm² evolves into a distribution of {311} interstitial agglomerates during the initial annealing stages at 670815 °C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess interstitials drive substitutional B into electrically inactive, metastable clusters of presumably two or three B atoms at concentrations below the solid solubility, thus explaining the generally observed immobile B peak during TED of ion-implanted B. Injected interstitials undergo retarded diffusion in the MBE-grown Si with an effective migration energy of ∼3.5 eV, which arises from trapping at substitutional C. The concept of trap-limited diffusion provides a stepping stone for understanding the enormous disparity among published values for the interstitial diffusivity in Si. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ∼10[sup 19]/cm³ prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation. The present insights have been implemented into a process simulator, allowing fo... [ABSTRACT FROM AUTHOR]

Provides information on a study which investigated the gettering mechanisms of iron in silicon. Details of gettering layers into iron-contaminated silicon wafers by means of high-energy ion implantation; Methodology of the study; Results and discussion.

Presents a study that investigated extended defects induced in silicon by high energy implantation. Analysis of defects by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements; Effects of preexisting impurities, implantation dose and annealing conditions on the formation and density of the dislocations; Background on high energy ion implantation into silicon.

Deals with a study which investigated the effects of low-dose ion implants with silicon, neon and fluorine on the transient enhanced diffusion of boron in silicon after annealing at high temperature. Background to the study; Experimental procedures; Results and discussion.

Presents a study which compared diffusion in thin silicon films grown by solid-phase-epitaxy to diffusion in films grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusion.

Presents information on a study which defined the processing parameters which will optimize the photoluminescence intensity of erbium implanted in silicon. Methods; Results; Discussion.

Presents information on a study which examined the electrical and defect properties of ion-implanted erbium in silicon. Methods; Results; Discussion.

Presents a study that investigated the effect of ion implantation and solute atoms on the interdiffusion in amorphous silicon/germanium multilayers. Diffusivities of other solutes such as platinum and bismuth; Investigation of the samples before and after ion implantation or thermal annealing; Effect of boron implantation.

Presents a study that explored the nature of differential ion damage in aluminum arsenide-gallium arsenide epitaxial heterostructures using conventional and high-resolution transmission electron microscopy and Rutherford backscattering spectrometry. Use of silicon&supx; ion implantation to highlight the buildup of lattice damage in gallium arsenide; Experimental details; Result of the study.

Examines the dependence on temperature, dose and dose rate of the intermixing of silicon (Si) and germanium (Ge) atoms in the amorphous phase. Use of the Rutherford backscattering spectrometry technique; Relaxation in the diffusion coefficient; Target atom displacement in Si-Ge alloys of different average compositions.