Formation of extended defects in silicon by high energy implantation of B and P.

Authors :: Cheng, J. Y.
Eaglesham, D. J.
Jacobson, D. C.
Stolk, P. A.
Benton, J. L.
Poate, J. M.
Source :: Journal of Applied Physics; 8/15/1996, Vol. 80 Issue 4, p2105, 8p
Publication Year :: 1996
Abstract: Presents a study that investigated extended defects induced in silicon by high energy implantation. Analysis of defects by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements; Effects of preexisting impurities, implantation dose and annealing conditions on the formation and density of the dislocations; Background on high energy ion implantation into silicon.

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